ONSEMI MMDFS3P303R2

MMDFS3P303
Power MOSFET
3 Amps, 30 Volts
P–Channel SO–8, FETKY
The FETKY product family incorporates low RDS(on), MOSFETs
packaged with industry leading, low forward drop, low leakage
Schottky Barrier rectifiers to offer high efficiency components in a
space saving configuration. Independent pinouts for MOSFET and
Schottky die allow the flexibility to use a single component for
switching and rectification functions in a wide variety of applications
such as Buck Converter, Buck–Boost, Synchronous Rectification,
Low Voltage Motor Control, and Load Management in Battery Packs,
Chargers, Cell Phones and other Portable Products.
• Power MOSFET with Low VF, Low IR Schottky Rectifier
• Lower Component Placement and Inventory Costs along with
Board Space Savings
• R2 Suffix for Tape and Reel (2500 units/13″ reel)
• Mounting Information for SO–8 Package Provided
• IDSS Specified at Elevated Temperature
• Applications Information Provided
• Marking: 3P303
http://onsemi.com
3 AMPERES
30 VOLTS
RDS(on) = 100 m
VF = 0.42 Volts
P–Channel
D
G
S
MARKING
DIAGRAM
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
(Notes 1. & 2.)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
30
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M)
VDGR
30
Vdc
Gate–to–Source Voltage – Continuous
VGS
20
Vdc
Drain Current
– Continuous @ TA = 25°C
– Continuous @ TA = 100°C
– Single Pulse (tp 10 s)
ID
ID
IDM
3.5
2.25
12
Adc
PD
2.0
Watts
Total Power Dissipation @ TA = 25°C
(Note 3.)
SO–8
CASE 751
STYLE 18
8
1
L
Y
WW
Apk
Single Pulse Drain–to–Source Avalanche
EAS
375
mJ
Energy – STARTING TJ = 25°C
VDD = 30 Vdc, VGS = 10 Vdc, VDS = 20 Vdc,
IL = 9.0 Apk, L = 10 mH, RG = 25 1. Negative sign for P–channel device omitted for clarity.
2. Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2.0%.
3. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided),
10 sec. max.
Anode
1
8
Cathode
Anode
2
7
Cathode
Source
3
6
Drain
Gate
4
5
Drain
Top View
ORDERING INFORMATION
MMDFS3P303R2
November, 2000 – Rev. 2
1
= Location Code
= Year
= Work Week
PIN ASSIGNMENT
Device
 Semiconductor Components Industries, LLC, 2000
6N303
LYWW
Package
SO–8
Shipping
2500 Tape & Reel
Publication Order Number:
MMDFS3P303/D
MMDFS3P303
SCHOTTKY RECTIFIER MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
VRRM
VR
30
Volts
IO
3.0
Amps
Peak Repetitive Forward Current (Note 3.)
(Rated VR, Square Wave, 20 kHz) TA = 105°C
Ifrm
6.0
Amps
Non–Repetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
Ifsm
30
Amps
Thermal Resistance – Junction–to–Ambient (Note 4.) – MOSFET
RJA
201
°C/W
Thermal Resistance – Junction–to–Ambient (Note 5.) – MOSFET
RJA
105
Thermal Resistance – Junction–to–Ambient (Note 3.) – MOSFET
RJA
62.5
Thermal Resistance – Junction–to–Ambient (Note 4.) – Schottky
RJA
197
Thermal Resistance – Junction–to–Ambient (Note 5.) – Schottky
RJA
97
Thermal Resistance – Junction–to–Ambient (Note 3.) – Schottky
RJA
62.5
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Forward Current (Note 3.)
(Rated VR) TA = 100°C
THERMAL CHARACTERISTICS – SCHOTTKY AND MOSFET
Operating and Storage Temperature Range
Tj, Tstg
3. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), 10 sec. max.
4. Mounted with minimum recommended pad size, PC Board FR4.
5. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), Steady State.
°C
–55 to 150
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Notes 1. & 6.)
Characteristics
Symbol
Min
Typ
Max
Unit
V(BR)DSS
30
–
–
27
–
–
Vdc
mV/°C
IDSS
–
–
–
–
1.0
10
µAdc
IGSS
–
–
100
nAdc
VGS(th)
1.0
–
1.7
3.5
–
–
Vdc
mV/°C
RDS(on)
–
–
0.085
0.130
0.100
0.160
gFS
–
5.0
–
mhos
Ciss
–
405
–
pF
Coss
–
200
–
Crss
–
55
–
td(on)
–
12.5
25
tr
–
16
30
td(off)
–
50
90
tf
–
35
65
OFF CHARACTERISTICS
Drain–Source Voltage
(VGS = 0 Vdc, ID = 0.25 mA)
Temperature Coefficient (Positive)
Zero Gate Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate Body Leakage Current
(VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 6.)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mA)
Temperature Coefficient (Negative)
Static Drain–Source Resistance (VGS = 10 Vdc, ID = 3.5 Adc)
(VGS = 4.5 Vdc, ID = 2.0 Adc)
Forward Transconductance (VDS = 15 Vdc, ID = 3.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 25 Vd
Vdc, VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 7.)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
(VDD = 20 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc,
Vdc
RG = 6.0 Ω)
Fall Time
1. Negative signs for P–Channel device omitted for clarity.
6. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
7. Switching characteristics are independent of operating junction temperature.
http://onsemi.com
2
ns
MMDFS3P303
MOSFET ELECTRICAL CHARACTERISTICS – continued (TJ = 25°C unless otherwise noted) (Notes 1. & 6.)
Characteristics
Symbol
Min
Typ
Max
Unit
td(on)
–
19
–
ns
tr
–
36
–
td(off)
–
27
–
tf
–
31
–
QT
–
14
25
Q1
–
1.8
–
Q2
–
4.5
–
Q3
–
2.85
–
VSD
–
0.9
1.2
V
trr
–
26.6
–
ns
ta
–
18.8
–
tb
–
7.8
–
QRR
–
0.03
–
SWITCHING CHARACTERISTICS – continued (Note 7.)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
(VDD = 20 Vdc, ID = 2.0 Adc,
VGS = 4.5
4 5 Vdc,
Vdc
RG = 6.0 Ω)
Fall Time
Gate Charge
(VDS = 20 Vdc, ID = 3.5 Adc,
VGS = 10 Vdc)
nC
DRAIN SOURCE DIODE CHARACTERISTICS
Forward On–Voltage (Note 6.)
(IS = 1.7 Adc, VGS = 0 Vdc)
Reverse Recovery Time
(VGS = 0 V,
V IS = 3
3.5
5A
A,
dIS/dt = 100 A/µs)
Reverse Recovery Stored
Charge
µC
SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
g (Note
(
Maximum Instantaneous Forward Voltage
6.))
IF = 100 mAdc
Ad
IF = 3.0 Adc
IF = 6.0 Adc
VF
Maximum Instantaneous Reverse Current (Note
(
6.))
VR = 30 V
IR
Maximum Voltage Rate of Change
VR = 30 V
1. Negative signs for P–Channel device omitted for clarity.
6. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
7. Switching characteristics are independent of operating junction temperature.
http://onsemi.com
3
dV/dt
TJ = 25°C
TJ = 125°C
0.28
0.42
0.50
0.13
0.33
0.45
TJ = 25°C
TJ = 125°C
250
–
–
25
10,000
Volts
A
mA
V/s
MMDFS3P303
TYPICAL FET ELECTRICAL CHARACTERISTICS
10 V
6.0
4.5 V
6.0 V
5.0
TJ = 25°C
4.0 V
5.0 V
3.7 V
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
6.0
4.0
3.5 V
3.0
3.3 V
2.0
3.0 V
1.0
0
VGS = 2.7 V
0
0.25
0.5
0.75
1.0
1.25
1.5
1.75
4.0
3.0
2.0
25°C
1.0
100°C
0
2.0
VDS ≥ 10 V
5.0
1.5
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
0.5
0.4
0.3
0.2
0.1
4.0
6.0
8.0
10
R DS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS)
R DS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS)
TJ = 25°C
ID = 3.5 A
2.0
0.18
5.0
VGS = 4.5 V
0.14
0.12
0.10
10 V
0.08
0.06
0.04
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus
Gate–To–Source Voltage
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1000
1.8
VGS = 0 V
VGS = 10 V
ID = 1.5 A
1.4
IDSS , LEAKAGE (nA)
R DS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
4.5
TJ = 25°C
0.16
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1.6
4.0
3.5
Figure 2. Transfer Characteristics
0.7
0
3.0
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
0.6
2.5
2.0
TJ = -55°C
1.2
1.0
0.8
TJ = 125°C
100
100°C
10
0.6
0.4
-50
-25
0
25
50
75
100
125
1.0
150
0
TJ, JUNCTION TEMPERATURE (°C)
5.0
10
15
20
25
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
http://onsemi.com
4
30
MMDFS3P303
VDS = 0
12
VGS = 0
Ciss
1000
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1200
TJ = 25°C
10
800
C, CAPACITANCE (pF)
25
QT
20
8.0
Crss
600
6.0
Ciss
400
-5.0
5.0
0
VGS
10
15
20
25
ID = 3.5 A
30
0
TJ = 25°C
Q3
2.0
Crss
15
Q2
4.0
Coss
200
0
-10
VGS
Q1
VDS
2.0
0
4.0
6.0
8.0
10
12
10
5.0
0
14
VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
TYPICAL FET ELECTRICAL CHARACTERISTICS
QG, TOTAL GATE CHARGE (nC)
VDS
Figure 8. Gate–To–Source and
Drain–To–Source Voltage versus Total Charge
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
100
2.5
VGS = 10 V
TJ = 25°C
ID = 2.0 A
VDD = 15 V
IS, SOURCE CURRENT (AMPS)
1000
t, TIME (ns)
td(off)
tf
tr
td(on)
10
1.0
10
1.0
1.5
1.0
0.5
0
100
VGS = 0 V
TJ = 25°C
2.0
0
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
1.0 ms
10 ms
1.0
0.01
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.8
1.0
450
VGS = 12 V
SINGLE PULSE
TA = 25°C
0.1
0.6
Figure 10. Diode Forward Voltage versus
Current
EAS , SINGLE PULSE DRAIN-TO-SOURCE
AVALANCHE ENERGY (mJ)
ID, DRAIN CURRENT (AMPS)
10
0.4
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
RG, GATE RESISTANCE (OHMS)
100
0.2
1.0
10
400
300
250
200
150
100
50
0
100
ID = 3.5 A
350
25
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
http://onsemi.com
5
MMDFS3P303
TYPICAL FET ELECTRICAL CHARACTERISTICS
1.0
Rthja(t), EFFECTIVE TRANSIENT
THERMAL RESPONSE
D = 0.5
0.2
NORMALIZED TO RJA AT STEADY STATE (1″ PAD)
0.1
0.1
0.05
CHIP
JUNCTION
0.02
0.01
2.32 18.5 50.9 37.1 56.8 24.4 0.0014 F
0.0073 F
0.022 F
0.105 F
0.484 F
3.68 F
SINGLE PULSE
0.01
1E-03
AMBIENT
1E-02
1E-01
1E+00
t, TIME (s)
1E+01
1E+02
1E+03
Figure 13. FET Thermal Response
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
Figure 14. Diode Reverse Recovery Waveform
10
85°C
0.1
25°C
-40°C
TJ = 125°C
1.0
0.1
0.2
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS
0.3
0.4
0.5
0.6
0.7
10
85°C
TJ = 125°C
1.0
0.1
0
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.1
0.2
25°C
0.3
0.4
0.5
0.6
0.7
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 15. Typical Forward Voltage
Figure 16. Maximum Forward Voltage
http://onsemi.com
6
0.8
MMDFS3P303
TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS
IR, MAXIMUM REVERSE CURRENT (AMPS)
IR, REVERSE CURRENT (AMPS)
0.1
TJ = 125°C
0.01
85°C
0.001
0.0001
25°C
TJ = 125°C
0.01
0.001
25°C
0.0001
0.00001
0.00001
0.000001
0.1
0
5.0
10
15
20
25
0.000001
30
0
5.0
VR, REVERSE VOLTAGE (VOLTS)
IO , AVERAGE FORWARD CURRENT (AMPS)
10
15
20
25
30
dc
FREQ = 20 kHz
4.0
SQUARE WAVE
3.5
3.0
Ipk/Io = 2.5
2.0
Ipk/Io = 5.0
1.5
Ipk/Io = 10
1.0
Ipk/Io = 20
0.5
0
0
20
60
40
1.50
Ipk/Io = 1.25
dc
SQUARE
WAVE
Ipk/Io = 5.0
Ipk/Io = 10
Ipk/Io = 20
0.50
0.25
0
0
100
120
Figure 20. Current Derating
1.75
0.75
80
TA, AMBIENT TEMPERATURE (°C)
Figure 19. Typical Capacitance
1.00
30
5.0
4.5
VR, REVERSE VOLTAGE (VOLTS)
PFO , AVERAGE POWER DISSIPATION (WATTS)
C, CAPACITANCE (pF)
100
5.0
25
Figure 18. Maximum Reverse Current
1000
0
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 17. Typical Reverse Current
10
15
10
1.0
2.0
3.0
4.0
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 21. Forward Power Dissipation
http://onsemi.com
7
5.0
140
160
MMDFS3P303
TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS
Rthja(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE
1.0
D = 0.5
0.2
0.1
0.1
NORMALIZED TO RJA AT STEADY STATE (1″ PAD)
0.05
0.02
0.01
0.1010 CHIP
JUNCTION 39.422 F
0.01
1.2674 27.987 30.936 36.930 493.26 F 0.0131 F
0.2292 F 2.267 F
SINGLE PULSE
0.001
1.0E-05
1.0E-04
AMBIENT
1.0E-03
1.0E-02
1.0E-01
t, TIME (s)
1.0E+00
1.0E+01
1.0E+02
Figure 22. Schottky Thermal Response
TYPICAL APPLICATIONS
STEP DOWN SWITCHING REGULATORS
LO
+
+
Vin
CO
-
Vout
LOAD
-
Buck Regulator
LO
+
+
Vin
CO
-
Vout
-
Synchronous Buck Regulator
http://onsemi.com
8
LOAD
1.0E+03
MMDFS3P303
TYPICAL APPLICATIONS
STEP UP SWITCHING REGULATORS
L1
+
+
Vin
CO
Vout
LOAD
Q1
-
-
Boost Regulator
+
+
Vin
CO
-
Vout
LOAD
-
Buck–Boost Regulator
MULTIPLE BATTERY CHARGERS
Buck Regulator/Charger
Q1
Q2
LO
D2
BATT #1
+
Vin
D1
CO
-
Q3
D3
BATT #2
http://onsemi.com
9
MMDFS3P303
TYPICAL APPLICATIONS
Li–lon BATTERY PACK APPLICATIONS
Battery Pack
PACK +
Li-Ion
BATTERY
CELLS
SMART IC
DISCHARGE
CHARGE
Q1
Q2
PACK -
SCHOTTKY
SCHOTTKY
•
Applicable in battery packs which require a high current level.
•
During charge cycle Q2 is on and Q1 is off. Schottky can reduce power loss during fast charge.
•
During discharge Q1 is on and Q2 is off. Again, Schottky can reduce power dissipation.
•
Under normal operation, both transistors are on.
SO–8 FOOTPRINT
0.060
1.52
0.275
7.0
0.155
4.0
0.024
0.6
0.050
1.270
inches
mm
http://onsemi.com
10
MMDFS3P303
PACKAGE DIMENSIONS
SO–8
CASE 751–07
ISSUE V
–X–
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER
SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN
EXCESS OF THE D DIMENSION AT MAXIMUM
MATERIAL CONDITION.
A
8
5
0.25 (0.010)
S
B
1
M
Y
M
4
K
–Y–
G
C
N
X 45 SEATING
PLANE
–Z–
0.10 (0.004)
H
M
D
0.25 (0.010)
M
Z Y
S
X
J
S
XXXXXX
ALYW
http://onsemi.com
11
DIM
A
B
C
D
G
H
J
K
M
N
S
MILLIMETERS
MIN
MAX
4.80
5.00
3.80
4.00
1.35
1.75
0.33
0.51
1.27 BSC
0.10
0.25
0.19
0.25
0.40
1.27
0
8
0.25
0.50
5.80
6.20
STYLE 18:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
ANODE
ANODE
SOURCE
GATE
DRAIN
DRAIN
CATHODE
CATHODE
INCHES
MIN
MAX
0.189
0.197
0.150
0.157
0.053
0.069
0.013
0.020
0.050 BSC
0.004
0.010
0.007
0.010
0.016
0.050
0
8
0.010
0.020
0.228
0.244
MMDFS3P303
FETKY is a trademark of International Rectifier Corporation.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
NORTH AMERICA Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: [email protected]
Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
EUROPE: LDC for ON Semiconductor – European Support
German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET)
Email: ONlit–[email protected]
French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET)
Email: ONlit–[email protected]
English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT)
Email: [email protected]
CENTRAL/SOUTH AMERICA:
Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)
Email: ONlit–[email protected]
Toll–Free from Mexico: Dial 01–800–288–2872 for Access –
then Dial 866–297–9322
ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support
Phone: 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)
Toll Free from Hong Kong & Singapore:
001–800–4422–3781
Email: ONlit–[email protected]
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
Email: [email protected]
ON Semiconductor Website: http://onsemi.com
EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781
*Available from Germany, France, Italy, UK, Ireland
For additional information, please contact your local
Sales Representative.
http://onsemi.com
12
MMDFS3P303/D