isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB946A DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= -0.5V(Max)@IC= -5A ·Good Linearity of hFE ·Large Collector Current IC ·Complement to Type 2SD1271A APPLICATIONS ·Designed for power switching applications n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE UNIT s c s i . w w w -150 V -100 V -7 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak -15 A Collector Power Dissipation @ Ta=25℃ 2 PC TJ Tstg W Collector Power Dissipation @ TC=25℃ 40 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB946A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.25A -0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -5A; IB= -0.25A -1.5 V ICBO Collector Cutoff Current VCB= -100V ; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -5V ; IC=0 -50 μA hFE-1 DC Current Gain IC= -0.1A ; VCE= -2V hFE-2 DC Current Gain m e s isc fT Turn-on Time tstg Storage Time tf IC= -3.0A ,IB1= -IB2= -0.3A, hFE-2 Classifications Q P 60-120 90-180 130-260 isc Website：www.iscsemi.cn 2 MAX -100 UNIT V 45 n c . i IC=-0.5A; VCE= -10V; ftest=10MHz Fall Time R TYP. B . w w w ton MIN B IC= -3A ; VCE= -2V Current-Gain—Bandwidth Product Switching times CONDITIONS 60 260 30 MHz 0.5 μs 1.5 μs 0.1 μs