OPA8560EDD Infrared LED Chip High Speed GaAlAs/GaAlAs 1. Material Substrate GaAlAs (N Type) Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage Min VF(1) Typ Max Unit Condition V IF=10mA V IF=250mA V IR=10uA 1.1 VF(2) 1.5 Reverse Voltage VR Power PO 12.5 mW IF=250mA λP 850 nm IF=50mA Wavelength 5 ∆λ 45 nm IF=50mA Rise Time Tr 22 ns Fall Time Tf 13 ns ※ Note : LED chip is mounted on TO-18 gold header without resin coating. 4. Mechanical Data (a) Emission Area (b) Bottom Area (c) Bonding Pad (d) Chip Thickness (e) Junction Height --------------------- 58.1mil x 58.1mil --------------------- 59.1mil x 59.1mil --------------------128um --------------------7mil --------------------6.5mil (d) P Side Electrode AUK Corp. Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea Tel. +82 63 839 1111 Fax. +82 63 835 8259 www.auk.co.kr N Epi P Epi (e) N Side Electrode