Power Transistors 2SC5034 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 500 V VCES 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage VEBO 7 V Peak collector current ICP 15 A Collector current IC 7 A Base current IB 3 A Collector power TC=25°C dissipation Ta=25°C 35 PC Junction temperature Tj Storage temperature Tstg 2.6±0.1 1.2±0.15 1.45±0.15 0.7±0.1 0.75±0.1 2.54±0.2 5.08±0.4 7° 1 2 3 1:Base 2:Collector 3:Emitter TO–220E Full Pack Package 15.0±0.3 W 2.0 ■ Electrical Characteristics 2.9±0.2 4.1±0.2 8.0±0.2 Solder Dip ● High collector to emitter VCEO High-speed switching Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw +0.5 ● 13.7–0.2 ● φ3.2±0.1 3.0±0.2 ■ Features 9.9±0.3 150 ˚C –55 to +150 ˚C (TC=25˚C) Symbol Parameter Conditions min typ Unit 100 µA 100 µA ICBO Emitter cutoff current IEBO VEB = 5V, IC = 0 Collector to emitter voltage VCEO IC = 10mA, IB = 0 400 hFE1 VCE = 5V, IC = 0.1A 10 hFE2 VCE = 5V, IC = 3A 8 Collector to emitter saturation voltage VCE(sat) IC = 3A, IB = 0.6A 1.0 V Base to emitter saturation voltage VBE(sat) IC = 3A, IB = 0.6A 1.5 V Transition frequency fT VCE = 10V, IC = 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf Forward current transfer ratio VCB = 500V, IE = 0 max Collector cutoff current IC = 3A, IB1 = 0.6A, IB2 = –1.2A, VCC = 150V V 10 MHz 1.0 µs 2.0 µs 0.3 µs 1 Power Transistors 2SC5034 IC — VCE TC=25˚C (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=2.0W) 70 60 Collector current IC (A) Collector power dissipation PC (W) VCE(sat) — IC 5 50 (1) 40 30 20 IB=300mA 4 250mA 200mA 3 150mA 100mA 2 80mA 60mA 40mA 1 (2) 10 20mA (3) 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 TC=–25˚C 100˚C 0.3 0.1 0.03 0.3 1 3 100 25˚C TC=100˚C 30 –25˚C 10 3 1 0.3 0.1 0.3 1 3 0.3 1 Switching time ton,tstg,tf (µs) 300 100 30 10 3 Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=–IB2) VCC=150V TC=25˚C VCE=10V f=1MHz TC=25˚C 300 100 30 10 3 1 0.1 0.3 1 3 10 10 3 tstg 1 ton 0.3 tf 0.1 Non repetitive pulse TC=25˚C 30 ICP IC 10 t=0.5ms 3 1ms 1 10ms 0.3 DC 0.1 0.03 0.01 0.01 Collector to base voltage VCB (V) 10 Area of safe operation (ASO) 0.03 100 3 100 30 1000 30 0.1 Collector current IC (A) ton, tstg, tf — IC IE=0 f=1MHz TC=25˚C 10 0.01 0.01 0.03 0.1 0.01 0.03 10 100 3 0.03 Collector current IC (A) Cob — VCB 1 –25˚C 0.1 0.3 0.1 0.01 0.03 10 10000 0.3 TC=100˚C 0.3 fT — IC 300 Collector current IC (A) 3000 25˚C 1 Collector current IC (A) Transition frequency fT (MHz) Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 3 0.1 3 VCE=5V 10 1 10 1000 IC/IB=5 25˚C IC/IB=5 30 hFE — IC 30 1 0.1 10 1000 0.01 0.01 0.03 Collector output capacitance Cob (pF) 8 100 Collector to emitter voltage VCE (V) VBE(sat) — IC 100 2 6 Collector current IC (A) 0 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 80 0 1 2 3 4 5 6 7 Collector current IC (A) 8 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Power Transistors 2SC5034 Area of safe operation, reverse bias ASO Reverse bias ASO measuring circuit 16 Lcoil=200µH IC/IB=5 (IB1=–IB2) TC=25˚C Collector current IC (A) 14 L coil 12 IB1 10 –IB2 Vin 8 T.U.T IC VCC IC 6 4 Vclamp tW 2 0 0 100 200 300 400 500 600 700 800 Collector to emitter voltage VCE (V) Rth(t) — t Thermal resistance Rth(t) (˚C/W) 102 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3