ISC 2SD1495

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
2SD1493
DESCRIPTION
·High Breakdown Voltage: VCBO= 1500V (Min)
·High Switching Speed
APPLICATIONS
·Designed for TV horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
6
V
2.5
A
IC
Collector Current-Continuous
ICM
Collector Current-Peak
5
A
PC
Collector Power Dissipation
@ TC= 25℃
50
W
TJ
Junction Temperature
150
℃
-45~150
℃
Tstg
Storage Temperature Range
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
2SD1493
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 10mA; RBE= ∞
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 10mA; IC= 0
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 2A; IB= 0.6A
5.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 2A; IB= 0.6A
1.5
V
Collector Cutoff Current
VCB= 600V; IE= 0
10
μA
ICBO
isc Website:www.iscsemi.cn
CONDITIONS
B
B
2
MIN
TYP.
MAX
UNIT
800
V
6
V