PANASONIC 2SK3045

Power F-MOS FETs
2SK3045
Silicon N-Channel Power F-MOS FET
■ Features
● Avalanche energy capacity guaranteed: EAS > 15.6mJ
● VGSS = ±30V guaranteed
● High-speed switching: tf = 35ns
● No secondary breakdown
unit: mm
3.0±0.5
φ3.2±0.1
1.4±0.2
13.7±0.2
4.2±0.2
● Contactless relay
● Diving circuit for a solenoid
● Driving circuit for a motor
● Control equipment
● Switching power supply
Symbol
Unit
Drain to Source breakdown voltage
VDSS
500
V
Gate to Source voltage
VGSS
±30
V
DC
ID
±2.5
A
Pulse
IDP
±10
A
EAS*
15.6
mJ
Avalanche energy capacity
*
Ratings
Allowable power
TC = 25°C
dissipation
Ta = 25°C
30
PD
2.6±0.1
1.6±0.2
0.8±0.1
■ Absolute Maximum Ratings (TC = 25°C)
Drain current
2.9±0.2
15.0±0.5
■ Applications
Parameter
4.6±0.2
9.9±0.3
1
2
0.55±0.15
2.54±0.3
3 5.08±0.5
1: Gate
2: Drain
3: Source
TO-220D Package
W
2
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
L = 5mH, IL = 2.5A, VDD = 50V, 1 pulse
■ Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain to Source cut-off current
IDSS
VDS = 400V, VGS = 0
0.1
mA
Gate to Source leakage current
IGSS
VGS = ±30V, VDS = 0
±1
µA
Drain to Source breakdown voltage
VDSS
ID = 1mA, VGS = 0
Gate threshold voltage
Vth
VDS = 25V, ID = 1mA
Drain to Source ON-resistance
RDS(on)
VGS = 10V, ID = 1.5A
Forward transfer admittance
| Yfs |
VDS = 25V, ID = 1.5A
Diode forward voltage
VDSF
IDR = 2.5A, VGS = 0
Input capacitance (Common Source) Ciss
Output capacitance (Common Source)
Coss
VDS = 20V, VGS = 0, f = 1MHz
Reverse transfer capacitance (Common Source) Crss
500
V
2
3.2
1
5
V
4
Ω
1.5
S
−1.5
V
330
pF
55
pF
20
pF
Turn-on time (delay time)
td(on)
15
ns
Rise time
tr
VGS = 10V, ID = 1.5A
25
ns
Turn-off time (delay time)
td(off)
VDD = 150V, RL = 100Ω
55
ns
Fall time
tf
30
ns
1
Power F-MOS FETs
2SK3045
PD  Ta
Area of safe operation (ASO)
100
t=10µs
100µs
3
1ms
1
DC
10ms
0.3
100ms
0.1
0.03
24
(1) TC=Ta
(2) Without heat sink
Avalanche energy capacity EAS (mJ)
10
Allowable power dissipation PD (W)
60
Non repetitive pulse
TC=25˚C
30
Drain current ID (A)
EAS  Tj
50
40
30
(1)
20
10
(2)
0.01
0
1
3
10
30
100
300
1000
0
Drain to source voltage VDS (V)
20
40
60
ID  VDS
4
75
50
ID  VGS
125
Gate threshold voltage Vth (V)
4
Drain current ID (A)
2.5
2.0
6V
40W
150
175
Vth  TC
VDS=25V
VGS=10V 7V
6.5V
1.0
100
6
TC=25˚C
Drain current ID (A)
8
Junction temperature Tj (˚C)
3.5
TC=0˚C
150˚C
25˚C
100˚C
3
2
1
5.5V
0.5
12
0
25
80 100 120 140 160
5
1.5
16
Ambient temperature Ta (˚C)
4.0
3.0
VDD=50V
ID=2.5A
20
VDS=25V
ID=1mA
5
4
3
2
1
5V
0
0
0
0
10
20
30
40
50
60
0
Drain to source voltage VDS (V)
2
8
10
12
0
| Yfs |  ID
10
8
TC=150˚C
6
100˚C
4
25˚C
0˚C
2
0
1
2
3
4
Drain current ID (A)
5
75
100
125
150
IDR  VDSF
VGS=0
TC=25˚C
VDS=25V
TC=25˚C
2.5
2.0
1.5
1.0
0.5
0
0
50
100
Drain reverse current IDR (A)
VGS=10V
25
Case temperature TC (˚C)
3.0
12
Forward transfer admittance |Yfs| (S)
Drain to source ON-resistance RDS(on) (Ω)
6
Gate to source voltage VGS (V)
RDS(on)  ID
2
4
10
1
0.1
0.01
0
1
2
3
4
Drain current ID (A)
5
0
0.5
1.0
1.5
2.0
Diode forward voltage VDSF (V)
Power F-MOS FETs
2SK3045
VDS, VGS  Qg
1000
Ciss
100
Coss
10
Crss
400
16
350
14
VDS=150V
300
12
250V
250
10
200
8
VGS
150
6
100
4
50
2
150
Switching time td(on),tr,tf,td(off) (ns)
f=1MHz
TC=25˚C
Drain to source voltage VDS (V)
Input capacitance (Common source), Output capacitance (Common source),
Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
10000
td(on), tr, tf, td(off)  ID
Gate to source voltage VGS (V)
Ciss, Coss, Crss  VDS
VDD=150V
VGS=10V
TC=25˚C
125
100
td(off)
75
50
tf
tr
td(on)
25
VDS
1
0
50
100
150
200
0
250
0
Drain to source voltage VDS (V)
4
8
12
16
0
24
20
Gate charge amount Qg (nC)
0
0
0.5
1.0
1.5
2.0
2.5
3.0
Drain current ID (A)
Rth(t)  t
Thermal resistance Rth(t) (˚C/W)
102
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
(1)
(2)
10
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10
102
103
104
Time t (s)
3