DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3059 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3059 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3059 Isolated TO-220 designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 25 A) RDS(on)2 = 20 mΩ MAX. (VGS = 4.0 V, ID = 25 A) (Isolated TO-220) • Low Ciss: Ciss = 2400 pF TYP. • Built-in gate protection diode • Isolated TO-220 package ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 60 V Gate to Source Voltage (VDS = 0 V) VGSS(AC) ±20 V Gate to Source Voltage (VDS = 0 V) VGSS(DC) +20, −10 V ID(DC) ±50 A ID(pulse) ±200 A Total Power Dissipation (TC = 25°C) PT 30 W Total Power Dissipation (TA = 25°C) PT 2.0 W Channel Temperature Tch 150 °C Drain Current (DC) (TC = 25°C) Drain Current (Pulse) Note1 Storage Temperature Tstg –55 to +150 °C Single Avalanche Current Note2 IAS 25 A Single Avalanche Energy Note2 EAS 62.5 mJ Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13098EJ3V0DS00 (3rd edition) Date Published April 2001 NS CP(K) Printed in Japan The mark ★ shows major revised points. © 1999,2001 2SK3059 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Drain Current IDSS VDS = 60 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1 mA 1.0 1.5 2.0 V | yfs | VDS = 10 V, ID = 25 A 15 45 RDS(on)1 VGS = 10 V, ID = 25 A 11 13 mΩ RDS(on)2 VGS = 4.0 V, ID = 25 A 16 20 mΩ Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-on Delay Time td(on) Rise Time tr Turn-off Delay Time td(off) Fall Time tf S VDS = 10 V 2400 pF VGS = 0 V 700 pF 280 pF ID = 25 A 30 ns VGS(on) = 10 V 420 ns 140 ns 380 ns f = 1 MHz VDD = 30 V RG = 10 Ω Total Gate Charge QG ID = 50 A 50 nC Gate to Source Charge QGS VDD = 48 V 7.5 nC 17 nC Gate to Drain Charge QGD Body Diode Forward Voltage VGS = 10 V VF(S-D) IF = 50 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 50 A, VGS = 0 V 55 ns Reverse Recovery Charge Qrr di/dt = 100 A / µs 75 nC TEST CIRCUIT 2 SWITCHING TIME TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L RL PG. 50 Ω VDD VGS = 20 → 0 V RG PG. VGS VGS Wave Form 0 90% ID VGS 0 ID Starting Tch τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. 2 IG = 2 mA RL 50 Ω VDD 10% 0 10% Wave Form τ VDD PG. 90% BVDSS VDS ID 90% VDD ID IAS VGS(on) 10% Data Sheet D13098EJ3V0DS tr td(off) td(on) ton tf toff 2SK3059 TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 70 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 0 25 50 75 60 50 40 30 20 10 0 100 125 150 175 200 25 75 100 125 150 175 200 TC - Case Temperature - °C TC - Case Temperature - °C ★ 50 FORWARD BIAS SAFE OPERATING AREA 1000 100 PW n) o S( Lim ID(DC) RD 10 m s 0µ s 1m 0m s s Po Lim wer DC ite Dis d sip a 10 10 =1 0µ 10 i s tio n 1 TC = 25˚C Single Pulse 0.1 0.1 1 100 10 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - ˚C/W ID - Drain Current - A ID(pulse) ted 100 Rth(ch-A)= 62.5˚C/W 10 Rth(ch-C)= 4.17˚C/W 1 0.1 0.01 TC= 25˚C/W Single Pulse 0.001 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D13098EJ3V0DS 3 2SK3059 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 100 Pulsed TA = 125˚C 75˚C 25˚C −25˚C 10 ID - Drain Current - A ID - Drain Current - A 250 1 0.1 200 VGS = 10 V 150 100 VGS = 4.0 V 50 0 1 2 Pulsed VDS = 10 V 4 5 3 0 Tch = −25˚C 25˚C 75˚C 125˚C 1 VDS = 10 V Pulsed 1.0 10 100 RDS(on) - Drain to Source On-state Resistance - mΩ ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 60 20 ID = 25 A 50 25 VGS = 4.0 V VGS = 10 V 0 0.1 1 10 100 10 15 VGS - Gate to Source Voltage - V 1000 VDS = 10 V ID = 1 mA 2.0 1.5 1.0 0.5 0 −50 0 50 100 150 Tch - Channel Temperature - ˚C ID - Drain Current - A 4 5 0 GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE Pulsed 75 Pulsed 40 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS(off) - Gate to Source Cut-off Voltage - V | yfs | - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 0.1 0.1 2.0 1.5 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V 10 1.0 0.5 Data Sheet D13098EJ3V0DS SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 1000 40 VGS = 4.0 V 20 10 V 10 0 ID = 25 A −50 0 50 100 10 VGS = 0 V 1 0.1 00.1 0 150 VGS = 0 V f = 1 MHz 1000 Crss 100 1 10 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF SWITCHING CHARACTERISTICS Coss 10 0.1 VDD = 30 V VGS = 10 V RG = 10 Ω 10000 tr tf 1000 td(off) td(on) 100 10 1 0.1 100 trr - Reverse Recovery Time - ns di/dt = 100 A /µ s VGS = 0 V 100 10 VDS - Drain to Source Voltage - V REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 0.1 10 100 ID - Drain Current - A VDS - Drain to Source Voltage - V 1000 1.5 1.0 0.5 VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss VGS = 10 V 100 Tch - Channel Temperature - ˚C 10000 Pulsed DYNAMIC INPUT/OUTPUT CHARACTERISTICS 80 ID = 50 A 14 VGS 60 40 12 VDD = 48 V 30 V 12 V 10 8 6 4 20 VDS 2 VGS - Gate to Source Voltage - V 30 ISD - Diode Forward Current - A RDS(on) - Drain to Source On-state Resistance - mΩ 2SK3059 0 1 10 100 0 20 40 60 80 QG - Gate Charge - nC IF - Drain Current - A Data Sheet D13098EJ3V0DS 5 2SK3059 SINGLE AVALANCHE ENERGY DERATING FACTOR SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 160 100 IAS = 25 A EAS 10 =6 2.5 mJ RG = 25 Ω VDD = 30 V VGS = 20 V → 0 V 1 10 µ 100 µ 120 100 80 60 40 20 1m 10 m 0 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - ˚C L - Inductive Load - H 6 VDD = 30 V RG = 25 Ω VGS = 20 V → 0 V IAS ≤ 22.5 A 140 Energy Derating Factor - % IAS - Single Avalanche Current - A 1000 Data Sheet D13098EJ3V0DS 2SK3059 PACKAGE DRAWING (Unit : mm) Isolated TO-220AB (MP-45F) EQUIVALENT CIRCUIT 10.0±0.3 φ 3.2±0.2 4.5±0.2 2.7±0.2 0.7±0.1 2.54 TYP. 12.0±0.2 1.3±0.2 1.5±0.2 2.54 TYP. Body Diode Gate Gate Protection Diode 13.5 MIN. 4±0.2 3±0.1 15.0±0.3 Drain Source 2.5±0.1 0.65±0.1 1.Gate 2.Drain 3.Source 1 2 3 Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet D13098EJ3V0DS 7 2SK3059 • The information in this document is current as of April, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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