TOSHIBA 2SK3376MFV

2SK3376MFV
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK3376MFV
For ECM
Unit: mm
Application for Ultra-compact ECM
0.22±0.05
V
10
mA
Drain power dissipation (Ta = 25°C)
PD (Note 1)
150
mW
Tj
125
°C
Tstg
−55~125
°C
Junction Temperature
Storage temperature range
0.4
-20
IG
Gate Current
0.8±0.05
VGDO
Gate-Drain voltage
Unit
1
0.4
Rating
0.8±0.05
3
2
0.5±0.05
Symbol
1.2±0.05
Characteristic
1.2±0.05
0.32±0.05
Absolute Maximum Ratings (Ta=25°C)
0.13±0.05
•
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Note 1: Mounted on FR4 board
VESM
1.Drain
2.Source
3.Gate
JEDEC
-
JEITA
-
TOSHIBA
2-1L1C
Weight: 1.5mg (typ.)
0.5mm
0.45mm
0.45mm
0.4mm
IDSS CLASSIFICATION
A-Rank
80 to 200µA
B-Rank
170 to 300µA
C-Rank
270 to 480µA
BK-Rank 150 to 350µA
Marking
Equivalent Circuit
D
Type Name
3
IDSS Classification Symbol
A :A -Rank
B :B-Rank , BK-Rank
C :C-Rank
G
S
1
2007-11-01
2SK3376MFV
Electrical Characteristics (A-Rank IDSS Ta=25°C)
Characteristic
Symbol
Min
Typ.
Max
Unit
VDS = 2 V, VGS = 0
80
⎯
200
µA
VDD = 2 V, RL= 2kΩ,Cg = 3pF
⎯
⎯
240
µA
VGS(OFF) VDS = 2 V, ID = 1μA
-0.1
⎯
-0.8
V
Drain Current
IDSS
Drain Current
ID
Gate-Source Cut-off Voltage
Test Condition
Forward transfer admittance
|Yfs|
VDS = 2 V,VGS = 0V
0.7
1.4
⎯
mS
Input capacitance
Ciss
VDS = 2 V, VGS = 0, f = 1 MHz
⎯
5.5
⎯
pF
Voltage Gain
Gv
VDD = 2V, RL= 2kΩ,Cg = 3pF, f = 1kHz
-13.5
⎯
-9.0
dB
⎯
⎯
-2.0
dB
⎯
⎯
-4.0
dB
⎯
⎯
47
Min
Typ.
Max
Unit
170
⎯
300
µA
VDD = 2V, RL= 2kΩ,Cg = 3pF,f = 1kHz to 100Hz
Delta Voltage Gain
DGv(f)
Delta Voltage Gain
DGv(V) VDD = 2V to 1V, RL= 2kΩ,Cg = 3pF,f = 1kHz
Noise Voltage
VN
VDD = 2V, RL= 1kΩ,Cg = 3pF,Gv=80dB,f=A-Curve
Filter
mV
Electrical Characteristics (B-Rank IDSS Ta=25°C)
Characteristic
Drain Current
Drain Current
Gate-Source Cut-off Voltage
Symbol
IDSS
ID
Test Condition
VDS = 2 V, VGS = 0
VDD = 2 V, RL= 2kΩ,Cg = 3pF
VGS(OFF) VDS = 2 V, ID = 1μA
⎯
⎯
340
µA
-0.15
⎯
-1.0
V
Forward transfer admittance
|Yfs|
VDS = 2 V,VGS = 0V
0.7
1.4
⎯
mS
Input capacitance
Ciss
VDS = 2 V, VGS = 0, f = 1 MHz
⎯
5.5
⎯
pF
Voltage Gain
Gv
VDD = 2V, RL= 2kΩ,Cg = 3pF, f = 1kHz
-11.5
⎯
-8.0
dB
⎯
⎯
-2.0
dB
⎯
⎯
-7.0
dB
⎯
⎯
50
Min
Typ.
Max
Unit
270
⎯
480
µA
⎯
⎯
520
µA
VGS(OFF) VDS = 2 V, ID = 1μA
-0.2
⎯
-1.2
V
VDD = 2V, RL= 2kΩ,Cg = 3pF,f = 1kHz to 100Hz
Delta Voltage Gain
DGv(f)
Delta Voltage Gain
DGv(V) VDD = 2V to 1V, RL= 2kΩ,Cg = 3pF,f = 1kHz
Noise Voltage
VN
VDD = 2V, RL= 1kΩ,Cg = 3pF,Gv=80dB,f=A-Curve
Filter
mV
Electrical Characteristics (C-Rank IDSS Ta=25°C)
Characteristic
Symbol
Drain Current
IDSS
Drain Current
ID
Gate-Source Cut-off Voltage
Test Condition
VDS = 2 V, VGS = 0
VDD = 2 V, RL= 2kΩ,Cg = 3pF
Forward transfer admittance
|Yfs|
VDS = 2 V,VGS = 0V
0.7
1.4
⎯
mS
Input capacitance
Ciss
VDS = 2 V, VGS = 0, f = 1 MHz
⎯
5.5
⎯
pF
Voltage Gain
Gv
VDD = 2V, RL= 2kΩ,Cg = 3pF, f = 1kHz
-10.5
⎯
-6.75
dB
⎯
⎯
-2.0
dB
⎯
⎯
-20
dB
⎯
⎯
75
VDD = 2V, RL= 2kΩ,Cg = 3pF,f = 1kHz to 100Hz
Delta Voltage Gain
DGv(f)
Delta Voltage Gain
DGv(V) VDD = 2V to 1V, RL= 2kΩ,Cg = 3pF,f = 1kHz
Noise Voltage
VN
VDD = 2V, RL= 1kΩ,Cg = 3pF,Gv=80dB,f=A-Curve
Filter
2
mV
2007-11-01
2SK3376MFV
Electrical Characteristics (BK-Rank IDSS Ta=25°C)
Characteristic
Symbol
Drain Current
IDSS
Drain Current
ID
Gate-Source Cut-off Voltage
Test Condition
VDS = 2 V, VGS = 0
VDD = 2 V, RL= 2kΩ,Cg = 3pF
VGS(OFF) VDS = 2 V, ID = 1μA
Min
Typ.
Max
Unit
150
⎯
350
µA
⎯
⎯
390
µA
-0.125
⎯
-1.1
V
Forward transfer admittance
|Yfs|
VDS = 2 V,VGS = 0V
0.7
1.4
⎯
mS
Input capacitance
Ciss
VDS = 2 V, VGS = 0, f = 1 MHz
⎯
5.5
⎯
pF
Voltage Gain
Gv
VDD = 2V, RL= 2kΩ,Cg = 3pF, f = 1kHz
-12.0
⎯
-7.50
dB
⎯
⎯
-2.0
dB
⎯
⎯
-13.5
dB
⎯
⎯
65
VDD = 2V, RL= 2kΩ,Cg = 3pF,f = 1kHz to 100Hz
Delta Voltage Gain
DGv(f)
Delta Voltage Gain
DGv(V) VDD = 2V to 1V, RL= 2kΩ,Cg = 3pF,f = 1kHz
Noise Voltage
VN
VDD = 2V, RL= 1kΩ,Cg = 3pF,Gv=80dB,f=A-Curve
Filter
3
mV
2007-11-01
2SK3376MFV
ID – VDS
ID – VGS
600
600
VDS=2V
Common Source
Ta = 25 °C
(µA)
500
IDSS=200μA
ID
(µA)
400
+ 0.1 V
300
Drain Current
Drain Current
500
ID
Common Source
Ta = 25 °C
+ 0.05 V
VGS = 0 V
200
– 0.05 V
– 0.1 V
1.0
0
Forward transfer admittance
|Yfs| (mS)
Gate-Source Cut-off Voltage
VGS(OFF) (V )
Common Source
Ta = 25 °C
300
Drain Current
400
IDSS
500
-200
VGS(OFF):VDS=2V
ID = 1μA
IDSS:VDS=2V
VGS=0V
Common Source
Ta = 25 °C
-100
0
(dB)
DGv(V)
–3
Delta Voltage Gain
Voltage Gain Gv (dB)
Gv:VDD=2V
Cg=5pF
RL= 2.2kΩ,
f=1kHz
vin=100mV
IDSS: VDS=2V
VGS=0V
Common Source
Ta = 25°C
–4
300
Drain Current
200
300
400
IDSS
500
600
(µA)
DGv(V)– IDSS
-3.0
–2
200
100
Drain Current
DGv:VDD=2V to 1.5V
Cg=5pF
RL= 2.2kΩ,
f=1kHz
vin=100mV
-2.5
–1
100
VGS (V)
-300
(µA)
Gv– IDSS
0
0
-400
0
600
0
–5
-0.2
VGS(OFF) – IDSS
|Yfs|:VDS=2V
VGS=0V
IDSS: VDS=2V
VGS=0V
200
-0.4
-0.6
-500
2
100
-0.8
Gate - Source voltage
|Yfs| – IDSS
0
100μA
VGS (V)
3
1
200μA
200
0
-1.0
2.0
Drain - Source voltage
300μA
300
100
100
0
IDSS=450μA
400
400
IDSS
500
-1.5
-1.0
-0.5
0
600
IDSS: VDS=2V
VGS=0V
Common Source
Ta = 25°C
-2.0
0
100
200
300
Drain Current
(µA)
4
400
IDSS
500
600
(µA)
2007-11-01
2SK3376MFV
VN – IDSS
VN
40
30
THD– IDSS
2.0
VN:VDD=2V
Cg=10pF
RL= 1kΩ
f=1kHz
80dB AMP
A-Curve Filter
IDSS: VDS=2V
VGS=0V
Common Source
Ta = 25°C
Total Harmonic Distortion
THD (%)
(mV)
50
Noise Voltage
60
20
10
0
THD:VDD=2V
Cg=5pF
RL= 2.2kΩ
f=1kHz
vin=50mV
IDSS: VDS=2V
VGS=0V
Common Source
Ta = 25°C
1.5
1.0
0.5
0
0
100
200
300
Drain Current
400
IDSS
500
0
600
(µA)
100
200
300
Drain Current
400
IDSS
500
600
(µA)
Ciss – VDS
Input capacitance
Ciss
(pF)
10
5
3
1
VGS=0V
f=1kHz
Common Source
Ta = 25°C
1
10
5
Drain - Source voltage
VDS
(V)
5
2007-11-01
2SK3376MFV
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
6
2007-11-01