QID0660023 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Dual IGBT Module 600 Amperes/600 Volts A D Q - (5 PLACES) E2 G2 C2E1 E2 G J G E1 G1 B E F C1 H - (3 PLACES) C1 K M C L - (4 PLACES) K M Description: Powerex Dual IGBT power module is configured as a half-bridge inverter. The Aluminum Silicon Carbide (AlSiC) baseplate offers light weight module design. N M LABEL P E2 G2 18V C1 C2E1 E2 C1 18V G1 E1 Outline Drawing and Circuit Diagram Dimensions A Inches Millimeters 4.00 101.6 Dimensions J Inches Millimeters 0.87 22.1 B 2.50 63.5 K 0.98 24.9 C 1.00±0.015 25.4±0.4 L 0.22 Dia. 5.6 Dia. D 3.39 86.1 M 0.53 13.5 E 1.89 48.0 N 0.09 Min. 2.3 Min. F 0.435 11.0 P 0.27 6.9 G 0.165 4.2 Q H #10-32 X 0.31 Min. #2-56 X 0.17 Min. The power module is designed to operate reliably in harsh aerospace, military and other environments. The module is rated to operate over full temperature range of -55°C to 125°C. Powerex is using High Accelerated Stress Test (HAST) to assure long term reliability of plastic power modules. Features: Class H Hybrid Screened to MIL-PRF-38534 Requirements Withstand HAST Light Weight AlSiC Baseplate Low Drive Requirement Ultra-fast Free Wheeling Diode Internal Zener Protection on Gates High Side Collector Sense Pin for De-sat Detection High Power Density Aluminum Nitride DBC Ceramic Applications: Aerospace Military Motor Control 04/10 Rev. 1 1 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID0660023 Dual IGBT Module 600 Amperes/600 Volts Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol QID0660023 Units Collector Emitter Voltage VCES 600 Volts Gate Emitter Voltage VGES ±20 Volts IC 600 Amperes ICM 1200* Amperes IF 600 Amperes Collector Current Peak Collector Current (1msec) Diode Forward Current Diode Forward Surge Current (1msec) IFM 1200* Amperes Junction Temperature Tj 150 °C Storage Temperature Tstg -55 to 125 °C Mounting Torque, Terminal Screws — 26 in-lb Mounting Torque, Control Screws — 4 in-lb Mounting Torque, Mounting Screws — 26 in-lb — 270 Grams VRMS 2500 Volts Module Weight (Typical) V Isolation Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 10.0 µA Gate-Emitter Threshold Voltage VGE(th) IC = 60mA, VCE = 10V 5.0 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 600A, VGE = 15V — 1.7 2.2 Volts IC = 300A, VGE = 15V — — 2.0 Volts IC = 600A, VGE = 15V, Tj = 125°C — 1.7 — Volts Total Gate Charge QG VCC = 300V, IC = 600A, VGS = 15V — 2400 — nC Diode Forward Voltage VFM IE = 600A, VGS = 0V — 1.8 2.5 Volts IE = 600A, VGS = 0V, Tj = 125°C — — 2.2 Volts *Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. 2 04/10 Rev. 1 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID0660023 Dual IGBT Module 600 Amperes/600 Volts Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Min. Typ. Max. Units Input Capacitance Symbol Cies Test Conditions — — 90 nF Output Capacitance Coes — — 11.0 nF Reverse Transfer Capacitance Cres — — 3.6 nF Turn-on Delay Time td(on) — — 500 ns Rise Time tr VCC = 300V, IC = 600A, — — 300 ns Turn-off Delay Time td(off) VGE1 = VGE2 = 15V, — — 750 ns Fall Time tf — — 300 ns VGE = 0V, VCE = 10V RG = 4.2Ω, IE = 600A, Diode Reverse Recovery Time trr — — 250 ns Diode Reverse Recovery Charge Qrr — 8.7 — µC Turn-on Energy Eon — — 18.0 mJ — — 40.0 mJ — — 8.0 mJ Min. Typ. Max. Units Turn-off Energy Eoff Reverse Recovery Energy Erec Inductive Load VCC = 350V, IC = 300A, RG = 5.0Ω, VGE = +15V/-7V, Tj = 125°C VCC = 350V, IC = 300A, RG = 10Ω, VGE = +15V/-7V, Tj = 125°C VCC = 350V, IC = 300A VGE = -7V, di/dt = -2000A/µS Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Thermal Resistance, Junction to Case** Rth(j-c) Per IGBT, Half Module, Tj = 125°C — 0.063 0.075 °C/W Thermal Resistance, Junction to Case** Rth(j-c) Per FWDi, Half Module, Tj = 125°C — 0.100 0.120 °C/W Contact Thermal Resistance, Case to Fin Rth(c-f) Per Module,Thermal Grease Applied — 0.020 — °C/W **TC measurement point is just under the chip. 04/10 Rev. 1 3