ROHM RB058L-60

RB058L-60
Data Sheet
Schottky Barrier Diode
RB058L-60
lApplications
General rectification
lExternal Dimensions(Unit : mm)
lLand Size Figure(Unit : mm)
2.6±0.2
2
PMDS
2.0±0.2
1.5±0.2
lConstruction
Silicon epitaxial
2.0
0.1±0.02
0.1
lStructure
ROHM : PMDS
JEDEC : SOD-106
1
2
4.2
1
5.0±0.3
3
1.2±0.3
9
4.5±0.2
lFeatures
1)Small power mold type.(PMDS)
2)High reliability
3)AEC-Q101 qualified
2.0
Manufacture Date
lTaping Dimensions(Unit : mm)
2.0±0.05
0.3
φ 1.55±0.05
12±0.2
5.5±0.05
5.3±0.1
0.05
9.5±0.1
1.75±0.1
4.0±0.1
φ 1.55
2.9±0.1
4.0±0.1
2.8MAX
lAbsolute Maximum Ratings(Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive)
VRM
60
V
Reverse voltage (DC)
VR
60
V
Average rectified forward current (*1)
Io
3
A
IFSM
70
A
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55 to +150
°C
Forward current surge peak (60Hz・1cyc)
(*1)Mounting on epoxi board. 180°Half sine wave
lElectrical Characteristics(Ta=25°C)
Parameter
Conditions
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
VF
-
-
0.64
V
IF=3.0A
Reverse current
IR
-
-
4.0
mA
VR=60V
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© 2012 ROHM Co., Ltd. All rights reserved.
1/4
2012.08 - Rev.A
Data Sheet
RB058L-60
10000
10
REVERSE CURRENT:IR(mA)
FORWARD CURRENT:IF(A)
Ta = 150°C
1000
Ta = 150°C
1
Ta = 125°C
Ta = 75°C
0.1
Ta = 25°C
100
Ta = 125°C
10
1
Ta = 75°C
0.1
Ta = 25°C
0.01
Ta = -25°C
Ta = -25°C
0.01
0.001
100
200
300
400
500
600
700
0
10
20
30
40
60
650
1000
f = 1MHz
Ta=25°C
VF=3A
n=30pcs
FORWARD VOLTAGE:VF(mV)
640
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
50
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
100
630
620
610
600
AVE : 585.4mV
590
580
570
560
550
10
0
5
10
15
20
25
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
800
700
Ta=25°C
VR=60V
n=30pcs
500
AVE : 304.2nA
400
300
200
Ta=25°C
f=1MHz
VR=0V
n=10pcs
775
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(nA)
600
750
725
AVE : 683.5pF
700
675
100
650
0
Ct DISPERSION MAP
IR DISPERSION MAP
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© 2012 ROHM Co., Ltd. All rights reserved.
2/4
2012.08 - Rev.A
Data Sheet
RB058L-60
500
20
Ta=25°C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
PEAK SURGE
FORWARD CURRENT:IFSM(A)
IFSM
RESERVE RECOVERY TIME:trr(ns)
19
450
8.3ms
1cyc.
400
350
AVE : 248A
300
250
18
17
16
AVE : 13.8ns
15
14
13
12
11
200
10
IFSM DISRESION MAP
trr DISPERSION MAP
10000
10000
8.3ms 8.3ms
IFSM
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
IFSM
1cyc.
1000
100
10
time
1000
100
10
1
10
100
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
1000
2.0
IM=10mA
IF=3A
1.5
Rth(j-a)
time
100
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THAERMAL IMPEDANCE:Rth (°C/W)
Mounted on epoxy board
1ms 300ms
Rth(j-c)
10
D = 1/2
1.0
Sin(θ=180)
DC
0.5
1
0.01
0.0
0.1
1
10
100
0
1000
2
3
4
5
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
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© 2012 ROHM Co., Ltd. All rights reserved.
1
3/4
2012.08 - Rev.A
Data Sheet
RB058L-60
0.05
8
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
REVERSE POWER
DISSIPATION:PR (W)
0.04
0.03
DC
0.02
D = 1/2
Sin(θ = 180)
Io
VR
6
t
DC
T
D=t/T
VR=30V
Tj=150°C
D = 1/2
4
2
Sin(θ = 180)
0.01
0
0
0
10
20
30
40
50
60
0
8
0V
T
D=t/T
VR=30V
Tj=150°C
5
D = 1/2
4
3
Sin(θ = 180)
2
100
125
150
25
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
DC
75
No Break at 30kV
VR
t
6
50
30
Io
0A
7
25
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE(Io-Ta)
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
0A
0V
20
15
AVE : 6.8kV
10
5
1
0
0
0
25
50
75
100
125
150
CASE TEMPARATURE:Tc(°C)
DERATING CURVE(Io-Tc)
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© 2012 ROHM Co., Ltd. All rights reserved.
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
4/4
2012.08 - Rev.A
Notice
Notes
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illustrate the standard usage and operations of the Products. The peripheral conditions must
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However, should you incur any damage arising from any inaccuracy or misprint of such
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© 2012 ROHM Co., Ltd. All rights reserved.
R1120A