1.5V Drive Nch MOSFET RQ1C075UN Structure Silicon N-channel MOSFET Dimensions (Unit : mm) TSMT8 (8) Features 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(1.5V drive). (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : XH Application Switching Packaging specifications Inner circuit Package Type Code Basic ordering unit (pieces) RQ1C075UN Taping TR 3000 (8) Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Unit Drain-source voltage VDSS 20 V Gate-source voltage VGSS 10 V Drain current Source current (Body Diode) 7.5 A 30 1 A A Continuous ID Pulsed Continuous IDP IS *1 Pulsed ISP *1 30 A PD *2 1.5 W Tch Tstg 150 55 to +150 C C Symbol Limits Unit 83.3 C / W Power dissipation Channel temperature Range of storage temperature (1) (2) (3) (4) (5) (6) (7) (8) Source Source Source Gate Drain Drain Drain Drain (7) (6) (5) ∗2 ∗1 (1) (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a ceramic board. Thermal resistance Parameter Channel to Ambient Rth (ch-a)* * Each terminal mounted on a ceramic board. www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/5 2010.04 - Rev.A RQ1C075UN Data Sheet Electrical characteristics (Ta = 25C) Parameter Symbol Gate-source leakage IGSS Drain-source breakdown voltage V(BR)DSS Typ. Max. Unit Conditions - - 10 A VGS=±10V, VDS=0V 20 - - V ID=1mA, VGS=0V IDSS - - 1 A VDS=20V, VGS=0V VGS (th) 0.3 - 1.0 V VDS=10V, ID=1mA - 11 16 Zero gate voltage drain current Gate threshold voltage Min. ID=7.5A, VGS=4.5V Static drain-source on-state resistance * RDS (on) - 14 20 - 17 24 - 20 40 Forward transfer admittance l Yfs l* 7 - - S ID=7.5A, VDS=10V Input capacitance Ciss - 1400 - pF VDS=10V m ID=7.5A, VGS=2.5V ID=3.7A, VGS=1.8V ID=1.5A, VGS=1.5V Output capacitance Coss - 310 - pF VGS=0V Reverse transfer capacitance Crss - 210 - pF f=1MHz Turn-on delay time td(on) * - 15 - ns ID=3.7A, VDD 10V tr * - 50 - ns VGS=4.5V td(off) * - 100 - ns RL=2.7 - 85 - ns RG=10 Total gate charge tf * Qg * - 18 - nC ID=7.5A, RL=1.3 Gate-source charge Gate-drain charge Qgs * Qgd * - 3.2 2.9 - nC nC VDD 10V, RG=10 VGS=4.5V Rise time Turn-off delay time Fall time *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Symbol VSD * Min. Typ. Max. - - 1.2 Unit Conditions V Is=7.5A, VGS=0V *Pulsed www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/5 2010.04 - Rev.A Data Sheet RQ1C075UN Electrical characteristic curves 8 VGS= 4.5V VGS= 2.5V VGS= 1.8V VGS= 1.5V 4 VGS= 1.2V 2 0 VGS= 4.5V VGS= 2.5V VGS= 1.8V VGS= 1.5V 6 4 VGS= 1.2V 2 0.4 0.6 0.8 1 0 0.1 0.01 2 4 6 8 0 10 0.5 1 1.5 DRAIN-SOURCE VOLTAGE : VDS[V] GATE-SOURCE VOLTAGE : VGS[V] Fig.2 Typical Output Characteristics( Ⅱ) Fig.3 Typical Transfer Characteristics VGS=1.5V VGS=1.8V VGS=2.5V VGS=4.5V 1 10 VGS= 4.5V Pulsed 100 10 1 100 0.1 DRAIN-CURRENT : ID[A] 10 1 0.1 1 10 100 DRAIN-CURRENT : ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( Ⅳ) www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 10 100 VGS= 2.5V Pulsed 1000 VGS= 1.5V Pulsed 10 1 0.1 1 10 1 0.1 1 10 100 DRAIN-CURRENT : ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current( Ⅴ) 3/5 10 100 DRAIN-CURRENT : ID[A] Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( Ⅱ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 1 1000 DRAIN-CURRENT : ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ) VGS= 1.8V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( Ⅲ) FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 1 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 10 0.1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 1 DRAIN-SOURCE VOLTAGE : VDS[V] Ta= 25°C Pulsed 1000 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C Fig.1 Typical Output Characteristics( Ⅰ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 100 0.2 VDS= 10V Pulsed 10 0.001 0 0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 100 Ta=25°C Pulsed DRAIN CURRENT : ID[A] 6 Ta=25°C Pulsed DRAIN CURRENT : ID[A] DRAIN CURRENT : ID[A] 8 100 VDS= 10V Pulsed 10 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 1 0.1 0.01 0.1 1 10 100 DRAIN-CURRENT : ID[A] Fig.9 Forward Transfer Admittance vs. Drain Current 2010.04 - Rev.A Data Sheet RQ1C075UN VGS=0V Pulsed 10 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0 0.5 1 50 ID= 3.7A 30 20 10 td(off) 0 5 10 GATE-SOURCE VOLTAGE : VGS[V] Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage Ta=25°C VDD=10V VGS=4.5V RG=10Ω Pulsed 100 10 td(on) 1 0 1.5 0.01 0.1 1 10 100 DRAIN-CURRENT : ID[A] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage 5 tf 1000 tr SOURCE-DRAIN VOLTAGE : VSD [V] Fig.12 Switching Characteristics 10000 4 CAPACITANCE : C [pF] GATE-SOURCE VOLTAGE : VGS [V] ID= 7.5A 40 10000 Ta=25°C Pulsed SWITCHING TIME : t [ns] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] SOURCE CURRENT : Is [A] 100 3 2 Ta=25°C VDD=10V ID= 7.5A RG=10Ω Pulsed 1 0 0 5 10 15 Ciss 1000 Crss Coss 100 20 TOTAL GATE CHARGE : Qg [nC] Fig.13 Dynamic Input Characteristics www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. Ta=25°C f=1MHz VGS=0V 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.14 Typical Capacitance vs. Drain-Source Voltage 4/5 2010.04 - Rev.A RQ1C075UN Data Sheet Measurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) ton Fig.1-1 Switching time measurement circuit 90% td(off) tr tf toff Fig.1-2 Switching waveforms VG VGS ID VDS RL D.U.T. IG(Const.) RG Qg VGS Qgs Qgd VDD Charge Fig.2-1 Gate charge measurement circuit www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. Fig.2-2 Gate Charge Waveform 5/5 2010.04 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). 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