1.5V Drive Pch MOSFET RZR020P01 zDimensions (Unit : mm) zStructure Silicon P-channel MOSFET TSMT3 1.0MAX zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT3). 4) Low voltage drive (1.5V). 2.9 0.85 0.4 0.7 1.6 2.8 (3) 0.3~0.6 0~0.1 (2) (1) 0.95 0.95 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source (3) Drain Abbreviated symbol : ZE zInner circuit zApplications Switching (3) zPackaging specifications Package Type ∗2 Taping (1) TL Code Basic ordering unit (pieces) ∗1 3000 RZR020P01 (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Gate (2) Source (3) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Total power dissipation Channel temperature Range of storage temperature Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits −12 ±10 ±2 ±6 −0.8 −6 1.0 150 −55 to +150 Unit V V A A A A W °C °C Symbol Rth (ch-a) ∗ Limits 125 °C / W ∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a ceramic board. zThermal resistance Parameter Channel to ambient Unit ∗ When mounted on a ceramic board. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/4 2009.03 - Rev.A Data Sheet RZR020P01 zElectrical characteristics (Ta=25°C) Parameter Symbol Min. IGSS Gate-source leakage − Drain-source breakdown voltage V(BR) DSS −12 Zero gate voltage drain current − IDSS Gate threshold voltage VGS (th) −0.3 − Static drain-source on-state − ∗ RDS (on) resistance − − 2 Yfs ∗ Forward transfer admittance − Ciss Input capacitance − Coss Output capacitance − Reverse transfer capacitance Crss td (on) ∗ − Turn-on delay time tr ∗ − Rise time td (off) ∗ − Turn-off delay time tf ∗ − Fall time − Total gate charge Qg ∗ − Gate-source charge Qgs ∗ Gate-drain charge − Qgd ∗ Typ. Max. − − − − 75 105 150 ±10 − −1 −1.0 105 145 225 200 − 770 75 60 10 17 65 35 6.5 1.3 0.8 400 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±10V, VDS=0V ID= −1mA, VGS=0V VDS= −12V, VGS=0V VDS= −6V, ID= −1mA ID= −2A, VGS= −4.5V ID= −1A, VGS= −2.5V ID= −1A, VGS= −1.8V ID= −0.4A, VGS= −1.5V VDS= −6V, ID= −2A VDS= −6V VGS=0V f=1MHz VDD −6V ID= −1A VGS= −4.5V RL 6Ω RG=10Ω VDD −6V, ID= −2A VGS= −4.5V RL 3Ω, RG=10Ω ∗Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol VSD ∗ Min. Typ. Max. Unit − − −1.2 V Conditions IS= −2A, VGS=0V ∗ Pulsed www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 2/4 2009.03 - Rev.A Data Sheet RZR020P01 zElectrical characteristics curves 3 -2.5V -1.8V 2.5 2 1.5 -1.6V 1 -1.8V 3 -4.5V -2.5V 2.5 2 -1.5V 1.5 VGS= -1.2V 1 VGS= -1.5V 0.5 0.4 0.6 0.8 1 0 2 DRAIN-SOURCE VOLTAGE : -VDS[V] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] 10 6 8 10 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 1 VGS= -2.5V Pulsed 10 10 0.01 DRAIN-CURRENT : -ID [A] DRAIN-CURRENT : -ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅴ) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 3/4 10 DRAIN-CURRENT : -ID [A] Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1 1 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 10 0.1 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.1 VGS= -1.5V Pulsed 100 2 100 DRAIN-CURRENT : -ID [A] 1000 1.5 10 10 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) VGS= -1.8V Pulsed 1 GATE-SOURCE VOLTAGE : -VGS[V] Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.1 DRAIN-CURRENT : -ID [A] 0.1 0.5 Fig.3 Typical Transfer Characteristics 10 100 0 10 1000 VGS= -4.5V Pulsed Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] 4 100 1000 0.01 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 1000 VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V 1 Ta= 75°C Ta= 25°C Ta= - 25°C Fig.2 Typical Output Characteristics(Ⅱ) 100 0.1 Ta= 125°C DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical Output Characteristics(Ⅰ) Ta=25°C Pulsed 0.1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 0.2 1 0.001 0 0 VDS= -6V Pulsed 0.5 0 1000 10 Ta=25°C Pulsed -10V 3.5 DRAIN CURRENT : -ID [A] DRAIN CURRENT : -ID [A] 4 Ta=25°C Pulsed -10V -4.5V DRAIN CURRENT : -ID [A] 4 3.5 10 VDS= -6V Pulsed 1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.1 0.01 0.1 1 10 DRAIN-CURRENT : -ID [A] Fig.9 Forward Transfer Admittance vs. Drain Current 2009.03 - Rev.A Data Sheet RZR020P01 500 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 ID = -1A 300 ID = -2A 200 tf 100 10 tr 100 td(on) 0 0 0.5 1 1 0 1.5 2 SOURCE-DRAIN VOLTAGE : -VSD [V] 10000 CAPACITANCE : C [pF] 4 3 2 Ta=25°C VDD = -6V ID = -2.0A RG= 10Ω Pulsed 0 0 1 2 3 4 5 6 6 8 10 0.01 0.1 7 Ta=25°C f=1MHz VGS=0V 1 10 DRAIN-CURRENT : -ID [A] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 1 4 GATE-SOURCE VOLTAGE : -VGS[V] 5 Ta=25°C VDD = -6V VGS=-4.5V R G=10Ω Pulsed td(off) 400 0.01 GATE-SOURCE VOLTAGE : -VGS [V] 1000 Ta=25°C Pulsed SWITCHING TIME : t [ns] VGS=0V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] REVERSE DRAIN CURRENT : -Is [A] 10 Fig.12 Switching Characteristics Ciss 1000 Coss 100 Crss 10 0.01 8 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : -VDS[V] TOTAL GATE CHARGE : Qg [nC] Fig.14 Typical Capacitance vs. Drain-Source Voltage Fig.13 Dynamic Input Characteristics zMeasurement circuit Pulse width ID VGS VDS VGS 10% 50% RL D.U.T. 50% 90% 10% VDS 90% td(on) 90% td(off) tr ton Fig.1-1 Switching Time Measurement Circuit VGS toff VG ID VDS Qg VGS D.U.T. RG tf Fig.1-2 Switching Waveforms RL IG (Const.) 10% VDD RG Qgs VDD Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform zNotice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 4/4 2009.03 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. 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