Super323 SOT323 NPN SILICON POWER (SWITCHING) TRANSISTOR ZUMT617 ISSUE 1 - SEPTEMBER 1998 FEATURES * 500mW POWER DISSIPATION * * * * IC CONT 1.5A 5A Peak Pulse Current Excellent HFE Characteristics Up To 5A (pulsed) Extremely Low Equivalent On Resistance; RCE(sat) APPLICATIONS * DC-DC converter boost functions * Motor drive functions DEVICE TYPE COMPLEMENT PARTMARKING RCE(sat) ZUMT617 ZUMT717 T61 135mΩ at 1.5A ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 15 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current** ICM 5 A Continuous Collector Current IC 1.5 A Base Current IB 200 mA Power Dissipation at Tamb =25°C* Ptot 385 † 500 ‡ mW -55 to +150 °C Operating and Storage Temperature Tj:Tstg Range † Recommended Ptot calculated using FR4 measuring 10 x 8 x 0.6mm (still air). ‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4 size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers. ZUMT617 ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage UNIT CONDITIONS. 15 V IC= 100µA V(BR)CEO 15 V IC= 10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE= 100µA Collector Cut-Off Current ICBO 10 nA VCB= 10V Emitter Cut-Off Current IEBO 10 nA VEB= 4V Collector Emitter Cut-Off Current ICES 10 nA VCES= 10V Collector-Emitter Saturation Voltage VCE(sat) 16.5 40 75 150 205 20 55 100 200 245 mV mV mV mV mV IC= 100mA, IB=10mA* IC= 250mA, IB= 10mA* IC= 500mA, IB=10mA* IC= 1A, IB=10mA* IC= 1.5A, IB=20mA* Base-Emitter Saturation Voltage VBE(sat) 930 1100 mV IC= 1.5A, IB=20mA* Base-Emitter Turn-On Voltage VBE(on) 865 1100 mV IC= 1.5A, VCE= 2V* Static Forward Current Transfer Ratio hFE Transition Frequency fT 180 MHz IC= 50mA, VCE= 10V f= 100MHz Output Capacitance Cobo 15 pF VCB= 10V, f=1MHz Turn-On Time t(on) 50 ns Turn-Off Time t(off) 250 ns VCC= 10V, IC= 1A IB1=IB2=100mA 200 300 250 200 75 30 TYP. MAX. IC= 10mA, VCE= 2V* IC= 100mA, VCE= 2V* IC= 500mA, VCE=2V* IC= 1A, VCE=2 V* IC= 3A, VCE=2V* IC=5A, VCE= 2V* 420 450 390 300 150 75 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% ZUMT617 TYPICAL CHARACTERISTICS 0.4 0.4 +25°C IC/IB=50 0.3 IC/IB=10 IC/IB=50 IC/IB=100 VCE(sat) - (V) VCE(sat) - (V) 0.3 0.2 0.1 0 -55°C +25°C +100°C +150°C 0.2 0.1 1m 10m 100m 1 0 10 1m 10m IC - Collector Current (A) VCE(sat) v IC 800 100m 1 10 IC - Collector Current (A) VCE(sat) v IC VCE=2V IC/IB=50 600 +100°C 400 VBE(sat) - (V) hFE - Typical Gain 1.0 +25°C 200 -55°C 0.75 0.5 0.25 0 0 1m -55°C +25°C +100°C +150°C 10m 100m 1 10 1m IC - Collector Current (A) hFE v IC 100m 1 10 10 IC - Collector Current (A) 1.0 0.8 VBE(on) - (V) 10m IC - Collector Current (A) VBE(sat) v IC 0.6 0.4 -55°C +25°C +100°C +150°C 0.2 0 1m 10m 100m 1 IC - Collector Current (A) VBE(on) v IC 10 1 100m 10m 100m DC 1s 100ms 10ms 1ms 100us 1 10 VCE - Collector Emitter Voltage (V) Safe Operating Area 100