SOT223 N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET ISSUE 2 - FEBRUARY 1996 FEATURES * LOW RDS(ON) - 3Ω ZVNL110G ✪ D PARTMARKING DETAIL - ZVNL110 S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DS VALUE 100 UNIT V Continuous Drain Current at T amb=25°C ID 600 mA A Pulsed Drain Current I DM 6 Gate-Source Voltage V GS ± 20 V Power Dissipation at T amb=25°C P tot 2 W Operating and Storage Temperature Range T j:T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS Gate-Source Threshold Voltage V GS(th) MAX. UNIT CONDITIONS. 100 I D=1mA, V GS=0V 1.5 V I D =1mA, V DS= V GS Gate-Body Leakage I GSS 100 nA V GS=± 20V, V DS=0V Zero Gate Voltage Drain Current I DSS 10 100 µA µA V DS=100V, V GS=0V V DS=80V, V GS=0V, T=125°C (2) On-State Drain Current(1) I D(on) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance(1)(2) g fs 0.75 V 750 mA V DS=25V, V GS=5V 4.5 3.0 Ω Ω V GS=5V, I D=250mA V GS=10V, I D=500mA mS V DS=25V, I D=500mA 225 Input Capacitance (2) C iss 75 pF Common Source Output Capacitance (2) C oss 25 pF Reverse Transfer Capacitance (2) Crss 8 pF Turn-On Delay Time (2)(3) t d(on) 7 ns Rise Time (2)(3) tr 12 ns Turn-Off Delay Time (2)(3) t d(off) 15 ns Fall Time (2)(3) tf 13 ns V DS=25V, V GS=0V, f=1MHz V DD≈25V, I D=1A, V GS =10V (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator 3 - 419