NEC 8P2SMA

DATA SHEET
THYRISTORS
8P2SMA,8P4SMA
8 A MOLD ISOLATED SCR
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
The 8P2SMA and 8P4SMA are P gate all diffused mold type
4.7 MAX.
10.5 MAX.
thyristor granted 8 A on-state average current (TC = 88°C), with
7 ±0.2
φ 3.2 ±0.2
3.0 MAX.
• 100 A surge current
2.8 ±0.2
• Mold isolated plastic package
1
• High voltage: VDRM, VRRM = 200 V (8P2SMA)
2 3
5 ±0.2
VDRM, VRRM = 400 V (8P4SMA)
APPLICATIONS
• Motor speed control for household appliance
• Temperature control for heater and constant temperature box
• Constant voltage power source and battery charger
*
13.5 MIN.
17 ±0.2
FEATURES
12 ±0.2
5 ±0.1
rated voltages up to 400 V.
0.8 ±0.1
1.3 ±0.2
1.5 ±0.2
2.54 TYP.
2.54 TYP.
• Automotive application such as regulator
0.5 ±0.1
2.5 ±0.1
SCR
1: Cathode
2: Anode
3: Gate
• Various solid state relay, etc.
*: TC test bench-mark
Standard weight: 2 g
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17164EJ3V0DS00 (3rd edition)
(Previous No. SC-2102)
Date Published June 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
1988
8P2SMA,8P4SMA
MAXIMUM RATINGS
Parameter
Symbol
8P2SMA
8P4SMA
Unit
Remarks
Non-repetitive Peak Reverse Voltage
VRSM
300
500
V
−
Non-repetitive Peak Off-state Voltage
VDSM
300
500
V
−
Repetitive Peak Reverse Voltage
VRRM
200
400
V
−
Repetitive Peak Off-state Voltage
VDRM
200
400
V
−
Average On-state Current
IT(AV)
8 (TC = 88°C, single phase half wave, θ = 180°)
A
Refer to Figure 11
Effective On-state Current
IT(RMS)
12.6
A
and 12.
ITSM
100 (f = 50 Hz, sine half wave, 1 cycle)
A
Refer to Figure 2.
Surge On-state Current
110 (f = 60 Hz, sine half wave, 1 cycle)
Fusing Current
2
∫ iT dt
45 (1 ms ≤ t ≤ 10 ms)
As
2
−
Critical Rate Rise of On-state Current
dIT/dt
50
A/µs
−
PGM
5 (f ≥ 50 Hz, Duty ≤ 10%)
W
Refer to Figure 3.
PG(AV)
0.5
W
Peak Gate Forward Current
IFGM
2 (f ≥ 50 Hz, Duty ≤ 10%)
A
−
Peak Gate Reverse Voltage
VRGM
10
V
−
Tj
−40~+125
°C
−
Tstg
−55~+150
°C
−
Peak Gate Power Dissipation
Average Gate Power Dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Parameter
Repetitive Peak Reverse Current
Symbol
IRRM
Conditions
VRM = VRRM
MIN.
TYP.
MAX.
Unit
Remarks
Tj = 25°C
−
−
100
µA
−
Tj = 125°C
−
−
2
mA
−
Tj = 25°C
−
−
100
µA
−
Repetitive Peak Off-state Current
IDRM
VDM = VDRM
−
−
2
mA
−
On-state Voltage
VTM
ITM = 25 A
−
−
1.4
V
Refer to Figure 1.
Refer to Figure 4.
Tj = 125°C
Gate Trigger Current
IGT
VDM = 6 V, RL = 100 Ω
−
−
10
mA
Gate Trigger Voltage
VGT
VDM = 6 V, RL = 100 Ω
−
−
1.5
V
0.2
−
−
V
−
−
6
−
mA
−
−
40
−
V/µs
−
−
100
−
µs
−
Gate Non-trigger Voltage
VGD
IH
Holding Current
Critical Rate Rise of Off-state Voltage
Circuit Commuted Turn-off Time
dv/dt
tq
Tj = 125°C, VDM
= 1 VDRM
2
VDM = 24 V, ITM = 25 A
Tj = 125°C, VDM
2
= 3 VDRM
Tj = 125°C, ITM = 8 A
diR/dt = 15 A/µs, VR ≥ 25 V,
VDM =
Thermal Resistance
2
Note
2
3
VDRM, dVD/dt = 10 V/µs
Rth(j-c)
Junction to case DC
−
−
3.7
°C/W Refer to Figure 13.
Rth(j-a)
Junction to ambient DC
−
−
60
°C/W
Data Sheet D17164EJ3V0DS
8P2SMA,8P4SMA
TYPICAL CHARACTERISTICS
Figure 1. iT vs. νT CHARACTERISTIC
Figure 2. ITSM RATING
100
Initial Tj = 125˚C
140
ITSM - Surge On-state Current - A
iT - On-state Current - A
MAX.
10
Tj = 125˚C
ITSM
10 ms
20 ms
120
100
60 Hz
80
50 Hz
60
40
20
25˚C
1
0
0
1
3
2
1
5
νT - On-state Voltage - V
VDM = 6 V
RL = 100 Ω
VGT - Gate Trigger Voltage - V
VFG - Gate Forward Voltage - V
Figure 4. GATE CHARACTERISTIC
8
PGM = 5 W
f ≥ 50 Hz
Duty ≤ 10%
4
PG(AV) = 0.5 W
2
0
4
3
Tj = −40˚C
2
0˚C
25˚C
1
0
0
1.0
2.0
0
5
IFG - Gate Forward Current - A
Figure 5. IGT vs. TA CHARACTERISTIC
15
20
25
30
Figure 6. VGT vs. TA CHARACTERISTIC
2.0
VGT - Gate Trigger Voltage - V
10
1
0.1
−40
10
IGT - Gate Trigger Current - mA
100
IGT - Gate Trigger Current - mA
100
5
Tj = −40 to
+125˚C
6
50
N - Cycles
Figure 3. GATE RATING
10
10
−20
0
20
40
60
80
100
1.0
0
−40
TA - Ambient Temperature - °C
−20
0
20
40
60
80
100
TA - Ambient Temperature - °C
Data Sheet D17164EJ3V0DS
3
8P2SMA,8P4SMA
Figure 7. iGT vs. τ CHARACTERISTIC
Figure 8. νGT vs. τ CHARACTERISTIC
1.0
1000
TA = 25˚C
νGT - Gate Trigger Voltage - V
iGT - Gate Trigger Current - mA
TA = 25˚C
100
10
1
0.1
0.6
0.4
0.2
0
1
10
100
1000
1000
−20
0
20
40
60
80
100
PT(AV) - On-state Average Power Dissipation - W
Figure 10. PT(AV) vs. IT(AV) CHARACTERISTIC
14
DC
θ
0˚
12
θ = 180˚
Conduction angle
10
120˚
90˚
8
60˚
6
30˚
4
2
0
0
2
4
6
8
10
12
14
IT(AV) - Average On-state Current - A
Figure 11. TC vs. IT(AV) RATING
Figure 12. TA vs. IT(AV) RATING
140
140
0˚
120
θ
Conduction angle
100
80
60
θ = 180˚
30˚
40
DC
60˚
90˚
120˚
20
0
TA - Ambient Temperature - °C
TC - Case Temperature - °C
100
Figure 9. IH vs. TA CHARACTERISTIC
TA - Ambient Temperature - °C
120
100
80
θ = 60˚
90˚
120˚
180˚
60
40
20
30˚
DC
0
0
2
4
6
8
10
12
14
IT(AV) - Average On-state Current - A
4
10
τ - Pulse Width - µs
10
0
−40
1
τ - Pulse Width - µs
20
IH - Holding Current - mA
0.8
0
1.0
2.0
IT(AV) - Average On-state Current - A
Data Sheet D17164EJ3V0DS
8P2SMA,8P4SMA
Figure 13. Zth CHARACTERISTIC
Zth - Transient Thermal Impedance - °C/W
100
Junction to ambient
10
Junction to case
1
0.1
0.01
0.1
1
10
100
1000
10000
t - Time - s
Data Sheet D17164EJ3V0DS
5
8P2SMA,8P4SMA
• The information in this document is current as of June, 2004. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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M8E 02. 11-1