AM1011-300 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .. .. .. .. REFRACTORY/GOLD METALL IZATION EMITTER SITE BALLASTING LOW RF THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 325 W MIN. WITH 7.7 dB GAIN 1030/1090 MHZ OPERATION .400 x .600 2L FL (M207) hermetically sealed BRANDING AM1011-300 O RDER CODE AM1011-300 PIN CONNECTION DESCRIPTION The AM1011-300 is a rugged, Class C common base device specifically designed for new ModeS interrogator and transponder applications. Minimal amplitude droop over the heavy Mode-S pulse burst is guarante ed by a thermal design incorporating an overlay site-ballasted die geometry. 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol PDISS IC VCC TJ TSTG Parameter Value Un it 1070 W Device Current* 36 A Collector-Supply Voltage* 43 V +250 °C − 65 to +200 °C 0.14 °C/W Power Dissipation (TC ≤100°C)* Junction Temperature (Pulsed RF operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* *Applies only to rated RF amplifier operation. December 9, 1997 1/5 AM1011-300 ELECTRICAL SPECIFICATIONS (T case = 25° C) STATIC Symb ol Value Test Con ditio ns Min. T yp. Max. Unit BVCBO IC = 75 mA IE = 0 mA 65 — — V BVCES IC = 75 mA VBE = 0 V 65 — — V BVEBO IC = 25 mA IC = 0 mA 3.0 — — V ICES VCE = 40 V VBE = 0 V — — 30 mA hFE VCE = 5 V IC = 10 A 10 — — — DYNAMIC Symb ol Value T est Co nditi ons Min. Typ . Max. Un it POUT f = 1090 MHz PIN = 55 W VCC = 40 V 325 350 — W hc f = 1090 MHz POUT = 325 W VCC = 40 V 40 45 — % GP f = 1090 MHz POUT = 325 W VCC = 40 V 7.7 8.0 — dB Pulse Condi tions: Pul se wi dth = 200 µs, D uty Cycle = 5%, are equivalent to the follow ing pulse burst condi tions: Mode-S Interr ogator (f req = 1030MHz) 32 puls es, 32µs on, 18µs off, burst period = 17. 6ms long t erm duty = 5.82% 2/5 December 9, 1997 AM1011-300 TYPICAL PERFORMANCE POWER OUTPUT vs POWER INPUT @ 1030 MHz POWER OUTPUT vs POWER INPUT @ 1090 MHz MAXIMUM THERMAL RESISTANCE vs PULSE WIDTH TC = 40°C PIN = 50W VCC = 40V Duty Cycle = 5% December 9, 1997 3/5 AM1011-300 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE ZIN TYPICAL COLLECTOR LOAD FREQ. ZIN (Ω) ZCL(Ω) 1030 MHz 0.7 + j 4.1 0.78 − j 2.4 1090 MHz 0.65 + j 4.2 0.4 − j 2.4 ZCL PIN = 55W TEST CIRCUIT 4/5 December 9, 1997 AM1011-300 PACKAGE MECHANICAL DATA Ref.: Dwg. No. 12-0207 UDCS No. 1011408 rev B Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1997 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland Taiwan - Thailand - United Kingdom - U.S.A. December 9, 1997 5/5