AOSMD AO4710

AO4710
30V N-Channel MOSFET
SRFET
General Description
TM
Product Summary
TM
SRFET The AO4710 uses advanced trench
technology with a monolithically integrated Schottky
diode to provide excellent RDS(ON), and low gate
charge. This device is suitable for use as a low side
FET in SMPS, load switching and general purpose
applications.
VDS (V) = 30V
ID =12.7A (VGS = 10V)
RDS(ON) < 11.8mΩ (VGS = 10V)
RDS(ON) < 14.2mΩ (VGS = 4.5V)
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
D
Bottom View
D
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current AF
VGS
TA=25°C
Maximum
30
Units
V
±12
V
12.7
TA=70°C
A
IDSM
10
Pulsed Drain Current B
IDM
60
A
Avalanche Current C
IAR
22
A
EAR
73
mJ
Repetitive avalanche energy L=0.3mH
TA=25°C
Power Dissipation
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
3.1
PDSM
TA=70°C
TJ, TSTG
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
Alpha & Omega Semiconductor, Ltd.
W
2.0
RθJA
RθJL
Typ
32
60
17
°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
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AO4710
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=1mA, VGS=0V
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS= ±12V
Gate Threshold Voltage
On state drain current
VDS=VGS ID=250µA
1.5
VGS=10V, VDS=5V
60
TJ=125°C
VGS=10V, ID=12.7A
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=11A
gFS
Forward Transconductance
VDS=5V, ID=12.7A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode + Schottky Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Max
Units
0.02
0.1
6
20
0.1
µA
1.9
2.3
V
9.8
11.8
15.2
19.0
11.7
14.2
mΩ
0.5
V
5
A
30
VDS=30V, VGS=0V
IDSS
ID(ON)
Typ
V
A
mΩ
78
0.38
1980
VGS=0V, VDS=15V, f=1MHz
mA
S
2376
pF
317
pF
111
pF
1.3
2.0
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
33
43
nC
Qg(4.5V) Total Gate Charge
15.0
20
nC
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=12.7A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
Body Diode Reverse Recovery Charge IF=12.7A, dI/dt=300A/µs
Body Diode Reverse Recovery Time
5.3
nC
6.0
nC
5.5
ns
VGS=10V, VDS=15V, RL=1.2Ω,
RGEN=3Ω
5.5
ns
27.0
ns
4.3
ns
IF=12.7A, dI/dt=300A/µs
11.2
13
7
ns
nC
A: The value of RθJA is measured withthe device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value
in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
Rev4:Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AO4710
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
30
10V
80
VDS=5V
25
6V
4.5V
20
ID(A)
ID (A)
60
15
40
10
VGS=3.5V
20
5
0
125°
0
0
1
2
3
4
5
1
1.5
VDS (Volts)
15
2.5
3
3.5
4
Normalized On-Resistance
2
VGS=4.5V
RDS(ON) (mΩ )
2
VGS(Volts)
Figure 2: Transfer Characteristics
DYNAMIC PARAMETERS
Figure 1: On-Region Characteristics
12
9
VGS=10V
6
VGS=10V
ID=12.7A
1.8
1.6
VGS=4.5V
1.4
ID=11A
1.2
1
0.8
0
5
10
15
20
25
30
0
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
60
90
120
150
180
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
30
1.0E+02
1.0E+01
ID=12.7A
25
125°C
1.0E+00
125°C
20
IS (A)
RDS(ON) (mΩ )
25°C
15
25°C
1.0E-01
1.0E-02
1.0E-03
10
1.0E-04
25°C
1.0E-05
5
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AO4710
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3000
10
2500
VDS=15V
ID=12.7A
6
Ciss
Capacitance (pF)
VGS (Volts)
8
4
2000
1500
1000
Crss
2
500
0
Coss
0
0
5
10
15
20
25
30
35
40
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
DYNAMIC PARAMETERS
100.0
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
100
10µs
90
80
1ms
RDS(ON)
limited
1.0
100µ
10ms
DC
TJ(Max)=150°C
TA=25°C
0.1
TJ(Max)=150°C
TA=25°C
70
Power (W)
10.0
ID (Amps)
5
60
50
40
30
20
10
0.0
0.1
1
10
0
0.0001
100
VDS (Volts)
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
PD
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
0.01
0.1
Ton
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.
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AO4710
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
1
0.9
1.0E-02
20A
0.8
VDS=24V
0.7
VSD(V)
IR (A)
1.0E-03
VDS=12V
1.0E-04
0.6
0.5
10A
5A
0.4
0.3
1.0E-05
0.2
IS=1A
0.1
1.0E-06
0
DYNAMIC
50
100
150
200
Temperature (°C)
Figure 12: Diode Reverse Leakage Current vs.
PARAMETERS
Junction Temperature
25
8
di/dt=800A/us
2.5
Irm
trr (ns)
4
Irm (A)
125ºC
di/dt=800A/us
12
25ºC
Qrr
10
100
150
200
Temperature (°C)
Figure 13: Diode Forward voltage vs. Junction
Temperature
15
6
15
50
125ºC
20
Qrr (nC)
0
2
125ºC
9
1.5
trr
S
0
25ºC
6
1
25ºC
25ºC
2
5
S
3
0.5
125ºC
0
0
0
5
10
15
20
25
10
125ºC
7
6
5
125º
10
25ºC
5
Qrr
4
3
0
0
200
400
600
800
0
1000
di/dt (A)
Figure 16: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Alpha & Omega Semiconductor, Ltd.
25
30
2.5
25ºC
2
9
trr
25ºC
6
1.5
1
2
1
Irm
20
Is=20A
125ºC
12
trr (ns)
Qrr (nC)
25ºC
15
15
3
15
8
Is=20A
10
18
9
Irm (A)
20
5
Is (A)
Figure 15: Diode Reverse Recovery Time and Soft
Coefficient vs. Conduction Current
Is (A)
Figure 14: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
25
0
0
30
S
0
3
S
125ºC
0
0
200
400
600
800
0.5
0
1000
di/dt (A)
Figure 17: Diode Reverse Recovery Time and Soft
Coefficient vs. di/dt
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AO4710
Gate Charge Test Circuit & Waveform
Vgs
Qg
20A
10V
+
+
VDC
-
VDC
Qgs
Vds
Qgd
-
DUT
10A
Vgs
5A
Ig
IS=1A
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
Vgs
125ºC
DUT
+
VDC
Vdd
di/dt=800A/us
-
Rg
Vgs
90%
125ºC
10%
25ºC
Qrr
Vgs
125ºC
t d(on)
tr
trr
t d(off)
t on
Irm
tf
25ºC
t off
25ºC
25ºC
S
125ºC
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
BVDSS
AR
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
125ºC
Rg
Id
Is=20A
Vgs
Is=20A
125ºC
DUT
25ºC
Vgs
25ºC
trr
125º
Diode Recovery Test Circuit & Waveforms
25ºC
25ºC
Vds +
Qrr
Isd
Vgs
L
Isd
+ Vdd
Ig
Alpha & Omega Semiconductor, Ltd.
IF
trr
dI/dt
IRM
Vdd
VDC
-
S
125ºC
Vgs
Irm
Vds -
Qrr = - Idt
DUT
Vds
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