AOSMD AOU438

AOU438
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOU438 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and low
gate resistance. This device is ideally suited for use
as a low side switch in CPU core power conversion.
Standard Product AOU438 is Pb-free (meets ROHS
& Sony 259 specifications). AOU438L is a Green
Product ordering option. AOU438 and AOU438L are
electrically identical .
VDS (V) = 30V
ID = 85A (VGS = 10V)
RDS(ON) < 4.5mΩ (VGS = 10V)
RDS(ON) < 6.5mΩ (VGS = 4.5V)
TO-251
D
Top View
Drain Connected
to Tab
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current B,G
TC=25°C
G
Pulsed Drain Current
Avalanche Current C
C
TC=25°C
Power Dissipation
B
Junction and Storage Temperature Range
V
200
30
A
EAR
112
mJ
100
Steady-State
W
50
TJ, TSTG
Steady-State
Alpha & Omega Semiconductor, Ltd.
A
63
IAR
Thermal Characteristics
Parameter
A
±20
ID
IDM
PD
TC=100°C
Maximum Junction-to-Ambient
C
Maximum Junction-to-Case
Units
V
85
TC=100°C B
Repetitive avalanche energy L=0.1mH
Maximum
30
-55 to 175
Symbol
RθJA
RθJC
°C
Typ
Max
Units
0.8
100
1.5
°C/W
°C/W
AOU438
Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
TJ=55°C
5
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
On state drain current
VGS=10V, VDS=5V
85
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=20A
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
A
VGS=4.5V, ID=20A
5.4
6.5
VDS=5V, ID=20A
106
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Rg
V
6.5
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
Reverse Transfer Capacitance
3
4.5
Forward Transconductance
Output Capacitance
nA
5.4
VSD
Crss
1.8
0.72
3200
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=15V, ID=20A
µA
100
3.5
TJ=125°C
gFS
Units
V
1
ID(ON)
Coss
Max
30
VDS=24V, VGS=0V
IDSS
IS
Typ
mΩ
mΩ
S
1
V
85
A
3840
pF
590
pF
414
pF
0.54
0.7
Ω
63
76
nC
33
40
nC
8.6
nC
Qgd
Gate Drain Charge
17.6
nC
tD(on)
Turn-On DelayTime
12
ns
15.5
ns
40
ns
14
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=100A/µs
34
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
30
41
ns
nC
A: The value of R θJA is measured with the device in a still air environment with TA =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
Rev1: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AOU438
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
60
10V
50
50
VDS=5V
4.0V
40
ID(A)
ID (A)
40
30
3.5V
125°C
30
25°C
20
20
10
10
VGS=3V
0
0
0
1
2
3
4
1.5
5
2
3
3.5
4
4.5
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
8
1.6
Normalized On-Resistance
7
RDS(ON) (mΩ)
2.5
VGS=4.5V
6
5
4
VGS=10V
3
ID=20A
1.4
VGS=10V
VGS=4.5V
1.2
1
2
0
10
20
30
40
50
60
0.8
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
25
50
8
100
125
150
175
1.0E+02
1.0E+01
6
125°C
4
125°C
1.0E+00
IS (A)
RDS(ON) (mΩ)
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
ID=20A
25°C
1.0E-01
25°C
1.0E-02
1.0E-03
2
1.0E-04
1.0E-05
0
2
4
6
8
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
10
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
AOU438
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5000
10
VDS=15V
ID=20A
4000
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
3000
2000
Coss
2
1000
0
0
Crss
0
10
20
30
40
50
60
70
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
15
20
25
30
1000
RDS(ON)
limited
100
TJ(Max)=150°C
TA=25°C
800
10µs
1ms
100µs
10
Power (W)
ID (Amps)
10
VDS (Volts)
Figure 8: Capacitance Characteristics
1000
10ms
DC
TJ(Max)=150°C
TA=25°C
1
0.1
600
400
200
0.1
1
10
100
VDS (Volts)
10
0
1E-05 1E-04 0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
ZθJC Normalized Transient
Thermal Resistance
5
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, single pulse
D=T on/T
TJ,PK=T A+PDM.ZθJC.RθJC
RθJC=1.5°C/W
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
T
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
10
100
AOU438
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
TA=25°C
100
Power Dissipation (W)
ID(A), Peak Avalanche Current
120
80
60
tA =
40
L ⋅ ID
BV − VDD
20
80
60
40
20
0
0.00001
0
0.0001
0.001
0.01
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
80
60
40
20
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 14: Current De-rating (Note B)
Alpha & Omega Semiconductor, Ltd.
0
25
50
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note B)
100
Current rating ID(A)
100
175
175