PD - 9.1488
IRFI9634G
PRELIMINARY
HEXFET® Power MOSFET
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Advanced Process Technology
Dynamic dv/dt Rating
150°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
D
VDSS = -250V
RDS(on) = 1.0Ω
G
ID = -4.1A
S
Description
Third Generation HEXFETs from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
and cost-effectiveness.Third Generation HEXFETs from
International Rectifier provide the designer with the
best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
-4.1
-2.6
-16
35
0.28
± 20
520
-4.1
3.5
-5.0
-55 to + 150
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
3.6
65
°C/W
8/8/96
IRFI9634G
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
-250
–––
–––
-2.0
2.2
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
-0.27
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
12
23
34
21
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
4.5
LS
Internal Source Inductance
–––
7.5
Ciss
Coss
Crss
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
–––
–––
–––
–––
680
170
40
12
V(BR)DSS
∆V(BR)DSS/∆TJ
IGSS
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, ID = -1mA
1.0
Ω
VGS = -10V, ID = -2.5A
-4.0
V
VDS = V GS, ID = -250µA
–––
S
VDS = -50V, ID = -4.1A
-25
VDS = -250V, VGS = 0V
µA
-250
VDS = -200V, VGS = 0V, T J = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
38
ID = -4.1A
8.0
nC
VDS = -200V
18
VGS = -10V, See Fig. 6 and 13
–––
VDD = -130V
–––
ID = -4.1A
ns
–––
RG = 12Ω
–––
RD = 31Ω, See Fig. 10
D
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
S
–––
VGS = 0V
–––
pF
VDS = -25V
–––
ƒ = 1.0MHz, See Fig. 5
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– -4.1
showing the
A
G
integral reverse
––– ––– -16
p-n junction diode.
S
––– ––– -6.5
V
TJ = 25°C, IS = -4.1A, VGS = 0V
––– 190 290
ns
TJ = 25°C, IF = -4.1A
––– 1.5 2.2
µC di/dt = -100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 62mH
RG = 25Ω, IAS = -4.1A. (See Figure 12)
ISD ≤ -4.1A, di/dt ≤ -640A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
IRFI9634G
100
100
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
TOP
-ID , Drain-to-Source Current (A )
-ID , D rain-to-S ource C urrent (A )
TOP
10
20 µ s P U L S E W ID TH
T c = 25 °C
A
-4 .5V
1
1
10
10
1
100
1
10
-VD S , D rain-to-S ource V oltage (V )
Fig 2. Typical Output Characteristics,
TJ = 150oC
2.5
R D S (on) , Drain-to-S ource O n Resistance
(N orm alized)
-I D , D rain-to -So urc e C urre nt (A )
100
T J = 25 °C
10
T J = 1 5 0 °C
V DS = -5 0 V
2 0µ s P U L S E W ID TH
4
5
6
7
8
9
-VG S , Ga te -to-Source Volta ge (V)
Fig 3. Typical Transfer Characteristics
A
100
-VD S , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics,
TJ = 25oC
1
2 0µ s P U LS E W ID TH
T C = 1 50 °C
-4.5 V
10
A
I D = -4.1 A
2.0
1.5
1.0
0.5
VG S = -1 0V
0.0
-60
-40
-20
0
20
40
60
80
100 120
T J , Junction T em perature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature
A
140 160
IRFI9634G
V GS
C is s
C rs s
C o ss
C , Capacitance (pF)
1000
=
=
=
=
20
0V ,
f = 1M H z
C g s + C g d , Cd s S H O R T E D
C gd
C d s + C gd
-V G S , G ate-to-S ource V oltage (V )
1200
C iss
800
600
C oss
400
C rss
200
0
10
16
12
8
4
FO R TE S T CIR C U IT
S E E FIG U R E 1 3
0
100
-VD S , D rain-to-S ourc e V oltage (V )
10
20
30
A
40
Q G , Total G ate C harge (nC )
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
O P E R A T IO N IN T H IS A R E A L IM ITE D
B Y R D S (o n)
-I D , D rain C urrent (A )
-IS D , R everse Drain C urrent (A )
V D S = -20 0V
V D S = -12 5V
V D S = -50 V
0
A
1
I D = -4 .1 A
10
T J = 1 50 °C
T J = 2 5 °C
1
V G S = 0V
0.1
1.0
2.0
3.0
4.0
-VS D , S ourc e-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
5.0
10
100µ s
1m s
1
10m s
T C = 25 °C
T J = 15 0°C
S ing le P u lse
0.1
10
A
100
-VD S , D rain-to-S ourc e V oltage (V )
Fig 8. Maximum Safe Operating Area
1000
IRFI9634G
5.0
RD
VDS
VGS
-ID , D rain C urrent (A m ps )
4.0
D.U.T.
RG
+
VDD
3.0
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
2.0
Fig 10a. Switching Time Test Circuit
1.0
td(on)
tr
t d(off)
tf
VGS
10%
A
0.0
25
50
75
100
125
150
TC , C as e Tem perature (°C )
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Therm al R espon se (Z thJC )
10
D = 0 .5 0
1
0 .2 0
0 .1 0
0 .0 5
0.1
PD M
0 .02
t
0 .01
t2
N o te s :
1 . D u ty f ac t or D = t
S IN G L E P U L S E
(T H E R M A L R E S P O N S E )
0.01
0.00001
1
1
/t
2
2 . P e a k TJ = P D M x Z th J C + T C
0.0001
0.001
0.01
0.1
1
t 1 , R e c ta n g u la r P u lse D u ra tio n (se c )
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
A
10
IRFI9634G
D .U .T
RG
A
IA S
-2 0 V
tp
VD D
D R IV E R
0 .0 1Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
E A S , S ingle Pulse Avalanc he E nergy (m J)
600
L
VDS
TO P
500
BOTTOM
400
300
200
100
0
A
25
IAS
ID
-4 .1 A
-5.2 A
-8 .2A
50
75
100
125
S tarting T J , J unc tion T em perature (°C )
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V (BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.3µF
-10V
QGS
.2µF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
150
IRFI9634G
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T*
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
RG
VGS
*
+
-
VDD
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
D=
Period
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For P-Channel HEXFETS
[ ISD ]
IRFI9634G
Package Outline
TO-220 Fullpak Outline
Dimensions are shown in millimeters (inches)
1 0 .6 0 (.4 1 7 )
1 0 .4 0 (.4 0 9 )
ø
3 .4 0 (.1 3 3 )
3 .1 0 (.1 2 3 )
4 .8 0 (.1 8 9 )
4 .6 0 (.1 8 1 )
-A 3 .7 0 (.1 4 5 )
3 .2 0 (.1 2 6 )
1 6 .0 0 (.6 3 0 )
1 5 .8 0 (.6 2 2 )
2 .8 0 (.1 1 0 )
2 .6 0 (.1 0 2 )
L E A D A S S IG N M E N T S
1 - G A TE
2 - D R A IN
3 - S O U RC E
7 .10 (.2 8 0 )
6 .70 (.2 6 3 )
1 .1 5 (.0 4 5 )
M IN.
N O TE S :
1 D IM E N S IO N ING & T O L E R A N C ING
P E R A N S I Y 1 4 .5 M , 1 9 8 2
1
2
3
2 C O N T R O L L IN G D IM E N S ION : IN C H .
3.3 0 (.1 30 )
3.1 0 (.1 22 )
-B -
1 3 .7 0 (.5 4 0 )
1 3 .5 0 (.5 3 0 )
C
A
3X
1 .4 0 (.0 5 5)
1 .0 5 (.0 4 2)
0 .9 0 (.0 35 )
3 X 0 .7 0 (.0 28 )
0 .2 5 (.0 1 0 )
2 .5 4 (.1 0 0 )
2X
3X
M
A M
B
0.4 8 (.0 1 9 )
0.4 4 (.0 1 7 )
2 .8 5 (.1 1 2 )
2 .6 5 (.1 0 4 )
D
B
M IN IM U M C R E E P A G E
D IS T A NC E B E TW E E N
A -B -C -D = 4.8 0 (.1 8 9 )
Part Marking Information
TO-220 Fullpak
E X AEMXPALMEP: LETH
10 G
: ISTHIS
IS AISN AIR
N F1
IR0FI840
W ITW
H ITH
A S SAS
E MSBE LMYB LY
L O TLOCTO DCO
E DE
9 B 1EM401
A
IN TE R N A TIO N A L
IN TE R N AT IO NA L
R E C TIF IE R
IRIRFF10
0
RE C TIF IE R
I8140G
LOGO
9
2
4
6
LOGO
9BE 4 01 19 M
24 5
A SASSESM
B LBL
YY
EM
L OLO
T T CO
D DE
E
CO
PA RT NU M B ERA
P AR T NU M B ER
D A TE C O D E
(YDA
Y WT EW )CO D E
Y(Y
Y YW
= YWE)A R
RK
WYY
W == YE
W EA E
W W = W EEK
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http://www.irf.com/
Data and specifications subject to change without notice.
8/96