SANYO FW344A

FW344A
Ordering number : EN8998A
SANYO Semiconductors
DATA SHEET
N-Channel and P-Channel Silicon MOSFETs
FW344A
General-Purpose Switching Device
Applications
Features
•
•
•
•
•
ON-resistance Nch : RDS(on)1=49mΩ(typ.)
Pch : RDS(on)1=78mΩ(typ.)
4V drive
Halogen free compliance
Nch+Pch MOSFET
Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
N-channel
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
P-channel
Unit
30
--30
V
±20
±20
V
ID
IDP
4.5
--3.5
A
Drain Current (PW≤10μs)
Duty cycle≤1%
5
--4
A
Drain Current (PW≤10μs)
IDP
Duty cycle≤1%
18
--14
Allowable Power Dissipation
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
Total Dissipation
PD
PT
1.7
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
1.4
When mounted on ceramic substrate (2000mm2×0.8mm)
A
W
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Package Dimensions
Product & Package Information
unit : mm (typ)
7072-001
• Package
: SOIC8
• JEITA, JEDEC
: SC-87, SOT-96
• Minimum Packing Quantity : 2,500 pcs./reel
4.9
0.22
0.375
1
4
0.445
0.254 (GAGE PLANE)
0.175
1.55
1.375
1.27
Packing Type : TL
0.715
5
3.9
6.0
8
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
Marking
FW344
A LOT No.
TL
Electrical Connection
8
7
6
5
1
2
3
4
SANYO : SOIC8
http://semicon.sanyo.com/en/network
31412 TKIM/22212PA TKIM TC-00002693 No.8998-1/6
FW344A
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
min
typ
Unit
max
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
V(BR)DSS
IDSS
ID=1mA, VGS=0V
VDS=30V, VGS=0V
IGSS
VGS(off)
| yfs |
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=4.5A
2.6
RDS(on)1
ID=4.5A, VGS=10V
49
64
mΩ
RDS(on)2
ID=2A, VGS=4.5V
80
112
mΩ
RDS(on)3
ID=2A, VGS=4V
100
140
mΩ
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
30
V
1.2
1
μA
±10
μA
2.6
V
S
280
pF
60
pF
Crss
30
pF
td(on)
tr
6
ns
21
ns
20
ns
Fall Time
td(off)
tf
Total Gate Charge
Qg
VDS=10V, f=1MHz
See specified Test Circuit.
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
IS=4.5A, VGS=0V
V(BR)DSS
IDSS
IGSS
ID=--1mA, VGS=0V
VDS=10V, VGS=10V, ID=4.5A
10
ns
5.6
nC
1.2
nC
0.8
0.85
nC
1.2
V
--1
μA
±10
μA
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
VGS(off)
| yfs |
--1.2
--2.3
V
ID=--3.5A, VGS=--10V
ID=--2A, VGS=--4.5V
78
102
mΩ
RDS(on)2
125
175
mΩ
RDS(on)3
ID=--2A, VGS=--4V
145
205
mΩ
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-ON Delay Time
Turn-OFF Delay Time
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
3.9
Input Capacitance
Rise Time
V
VDS=--10V, ID=--3.5A
RDS(on)1
Static Drain-to-Source On-State Resistance
--30
VDS=--30V, VGS=0V
S
250
pF
65
pF
Crss
46
pF
td(on)
tr
5.4
ns
34
ns
28
ns
Fall Time
td(off)
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=--10V, f=1MHz
See specified Test Circuit.
VDS=--10V, VGS=--10V, ID=--3.5A
24
ns
5
nC
1
nC
1.2
IS=--3.5A, VGS=0V
--0.88
nC
--1.5
V
No.8998-2/6
FW344A
Switching Time Test Circuit
[N-channel]
VDD=15V
VIN
0V
--10V
ID=4.5A
RL=3.3Ω
VIN
D
PW=10μs
D.C.≤1%
VDD= --15V
VIN
VOUT
D
PW=10μs
D.C.≤1%
G
50Ω
ID -- VDS
V
4.0
4.5V
5
4
3
1.0
2
0.5
1
0.3
0.4
0.5
0.6
0.7
0.8
Drain-to-Source Voltage, VDS -- V
RDS(on) -- VGS
200
150
100
50
0
2
4
6
8
Gate-to-Source Voltage, VGS -- V
0.5
10
IT16699
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Gate-to-Source Voltage, VGS -- V
[Nch]
Ta=25°C
4.5A
0
0
IT16697
ID=2.0A
250
0
1.0
RDS(on) -- Ta
200
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
300
0.9
°C
1.5
0.2
[Nch]
6
25
VGS=3.0V
0.1
ID -- VGS
VDS=10V
7
2.0
0
S
8
2.5
0
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
50Ω
9
Drain Current, ID -- A
3.0
[Nch]
6.0V
10.0V 8.0V
Drain Current, ID -- A
3.5
FW344A
P.G
S
4.5
4.0
VOUT
G
FW344A
P.G
ID= --3.5A
RL=4.3Ω
VIN
Ta=
75°
--2
C
5°C
10V
0V
[P-channel]
4.5
5.0
IT16698
[Nch]
150
2.0A
, I D=
4.0V
=
VGS
2.0A
,I =
4.5V D
=
VGS
A
I =4.5
0.0V, D
1
=
V GS
100
50
0
--60
--40
--20
0
20
40
60
80
100
Ambient Temperature, Ta -- °C
120
140
160
IT16700
No.8998-3/6
FW344A
5
3
C
25°
2
5°C
1.0
=
Ta
7
--2
5
°C
75
3
0.1
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
SW Time -- ID
100
0.1
7
5
3
td(off)
2
10
tf
td(on)
7
5
tr
3
0
0.2
0.4
0.6
0.8
1.0
1.2
IT16702
Ciss, Coss, Crss -- VDS
1000
[Nch]
f=1MHz
7
5
Ciss, Coss, Crss -- pF
Ciss
3
2
100
7
Coss
5
Crss
3
2
2
5
7
2
1.0
3
5
Drain Current, ID -- A
VGS -- Qg
10
10
7
10
IT16703
[Nch]
Drain Current, ID -- A
6
5
4
3
2
1
2
3
5
4
Total Gate Charge, Qg -- nC
--3.0V
--1.5
--1.0
--0.5
VGS= --2.5V
--0.1
--0.2
--0.3
--0.4
--0.5
op
er
ati
on
Operation in this
area is limited by RDS(on).
Ta=25°C
Single pulse
1unit
When mounted on ceramic substrate (2000mm2×0.8mm)
0.1
7
5
3
2
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
ID -- VGS
--7
5 7 100
IT16749
[Pch]
--6
--2.0
0
DC
1.0
7
5
3
2
VDS= --10V
--10
.
--2.5
0μ
1m s
10 s
10 ms
0m
s
10
s
Drain-to-Source Voltage, VDS -- V
[Pch]
--6.
0V
--4
.5V
--4
.0V
0V --8.0V
--3.0
[Nch]
10
ID=4.5A
IT16705
ID -- VDS
--3.5
30
IT16704
IDP=18A (PW≤10μs)
10
7
5
3
2
0.01
0.01
6
Drain Current, ID -- A
1
0
20
ASO
100
7
5
3
2
8
7
10
Drain-to-Source Voltage, VDS -- V
VDS=10V
ID=4.5A
9
0
--0.6
--0.7
--0.8
Drain-to-Source Voltage, VDS -- V
--0.9
--1.0
IT16750
--5
--4
--3
--2
--1
0
0
--0.5
--1.0
--1.5
--2.0
--2
Ta=
5°
75°
C
C
3
°C
2
25
Switching Time, SW Time -- ns
5
1.0
0.1
Gate-to-Source Voltage, VGS -- V
3
2
Diode Forward Voltage, VSD -- V
[Nch]
VDD=15V
VGS=10V
7
Drain Current, ID -- A
1.0
7
5
0.01
5 7 10
IT16701
Drain Current, ID -- A
0
3
2
3
2
2
0
[Nch]
VGS=0V
5°C
25°C
--25°
C
7
IS -- VSD
10
7
5
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
[Nch]
VDS=10V
Ta=
7
| yfs | -- ID
10
--2.5
--3.0
Gate-to-Source Voltage, VGS -- V
--3.0
--4.0
IT16751
No.8998-4/6
FW344A
ID= --2A
--3.5A
200
150
100
50
0
0
--2
--4
--6
--8
Gate-to-Source Voltage, VGS -- V
3
2
C
5°
--2
=
°C
Ta
75
7
5
°C
25
3
0.1
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
SW Time -- ID
100
--40
--20
0
20
40
60
80
100
120
140
160
IT16753
IS -- VSD
[Pch]
VGS=0V
3
2
--1.0
7
5
3
2
--0.1
7
5
5
3
tf
2
10
7
td(on)
5
tr
3
--0.2
--0.4
--0.6
--0.8
--1.0
Ciss, Coss, Crss -- VDS
1000
7
--1.2
IT16755
[Pch]
f=1MHz
5
3
Ciss, Coss, Crss -- pF
td(off)
0
Diode Forward Voltage, VSD -- V
[Pch]
VDD= --15V
VGS= --10V
7
Switching Time, SW Time -- ns
50
--0.01
5 7 --10
IT16754
Drain Current, ID -- A
Ciss
2
100
7
Coss
5
Crss
3
2
2
1.0
--0.1
2
3
5
7
--1.0
2
3
5
Drain Current, ID -- A
7
[Pch]
VDS= --10V
ID= --3.5A
--9
10
--10
--7
--6
--5
--4
--3
--2
--1
1
2
3
4
Total Gate Charge, Qg -- nC
--5
5
6
IT16757
--10
--15
--20
--25
Drain-to-Source Voltage, VDS -- V
--100
7
5
3
2
Drain Current, ID -- A
--8
0
0
IT16756
VGS -- Qg
--10
Gate-to-Source Voltage, VGS -- V
A
--3.5
V, I D=
--10.0
V GS=
3
2
2
0
.0A
= --2
V, I D
--4.5
=
VGS
100
--10
7
5
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
[Pch]
5
1.0
= -VGS
150
Ambient Temperature, Ta -- °C
VDS= --10V
7
.0A
= --2
, ID
4.0V
IT16752
| yfs | -- ID
10
200
0
--60
--10
[Pch]
250
Ta=7
5°C
25°C
250
RDS(on) -- Ta
300
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
[Pch]
Ta=25°C
--25°C
RDS(on) -- VGS
300
--10
7
5
3
2
ASO
[Pch]
IDP= --14A(PW≤10μs)
100
μs
1
10 ms
ms
10
0m
s
ID= --3.5A
DC
--1.0
7
5
3
2
--0.1
7
5
3
2
--30
IT13192
10
s
op
era
Operation in this area tion
is limited by RDS(on).
Ta=25°C
Single pulse
1unit
When mounted on ceramic substrate (2000mm2×0.8mm)
--0.01
--0.01 2 3
5 7--0.1
2 3
5 7--1.0
2 3
5 7--10
2 3
Drain-to-Source Voltage, VDS -- V
5 7--100
IT16758
No.8998-5/6
FW344A
PD -- Ta
[Nch/Pch]
When mounted on ceramic substrate
(2000mm2×0.8mm)
1.7
1.5
1.4
To
t
al
1.0
Di
ss
1u
nit
ip
ati
on
0.5
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT16759
PD (FET1) -- PD (FET2)
1.6
Allowable Power Dissipation (FET1), PD -- W
Allowable Power Dissipation, PD -- W
2.0
When mounted on ceramic substrate
(2000mm2×0.8mm)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Allowable Power Dissipation (FET1), PD -- W
1.6
IT16760
Note on usage : Since the FW344A is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
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condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
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This catalog provides information as of March, 2012. Specifications and information herein are subject
to change without notice.
PS No.8998-6/6