FW344A Ordering number : EN8998A SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs FW344A General-Purpose Switching Device Applications Features • • • • • ON-resistance Nch : RDS(on)1=49mΩ(typ.) Pch : RDS(on)1=78mΩ(typ.) 4V drive Halogen free compliance Nch+Pch MOSFET Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions N-channel VDSS VGSS Gate-to-Source Voltage Drain Current (DC) P-channel Unit 30 --30 V ±20 ±20 V ID IDP 4.5 --3.5 A Drain Current (PW≤10μs) Duty cycle≤1% 5 --4 A Drain Current (PW≤10μs) IDP Duty cycle≤1% 18 --14 Allowable Power Dissipation When mounted on ceramic substrate (900mm2×0.8mm) 1unit Total Dissipation PD PT 1.7 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C 1.4 When mounted on ceramic substrate (2000mm2×0.8mm) A W This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Package Dimensions Product & Package Information unit : mm (typ) 7072-001 • Package : SOIC8 • JEITA, JEDEC : SC-87, SOT-96 • Minimum Packing Quantity : 2,500 pcs./reel 4.9 0.22 0.375 1 4 0.445 0.254 (GAGE PLANE) 0.175 1.55 1.375 1.27 Packing Type : TL 0.715 5 3.9 6.0 8 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Marking FW344 A LOT No. TL Electrical Connection 8 7 6 5 1 2 3 4 SANYO : SOIC8 http://semicon.sanyo.com/en/network 31412 TKIM/22212PA TKIM TC-00002693 No.8998-1/6 FW344A Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS ID=1mA, VGS=0V VDS=30V, VGS=0V IGSS VGS(off) | yfs | VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=4.5A 2.6 RDS(on)1 ID=4.5A, VGS=10V 49 64 mΩ RDS(on)2 ID=2A, VGS=4.5V 80 112 mΩ RDS(on)3 ID=2A, VGS=4V 100 140 mΩ Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time 30 V 1.2 1 μA ±10 μA 2.6 V S 280 pF 60 pF Crss 30 pF td(on) tr 6 ns 21 ns 20 ns Fall Time td(off) tf Total Gate Charge Qg VDS=10V, f=1MHz See specified Test Circuit. Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD IS=4.5A, VGS=0V V(BR)DSS IDSS IGSS ID=--1mA, VGS=0V VDS=10V, VGS=10V, ID=4.5A 10 ns 5.6 nC 1.2 nC 0.8 0.85 nC 1.2 V --1 μA ±10 μA [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance VGS(off) | yfs | --1.2 --2.3 V ID=--3.5A, VGS=--10V ID=--2A, VGS=--4.5V 78 102 mΩ RDS(on)2 125 175 mΩ RDS(on)3 ID=--2A, VGS=--4V 145 205 mΩ Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Turn-OFF Delay Time VGS=±16V, VDS=0V VDS=--10V, ID=--1mA 3.9 Input Capacitance Rise Time V VDS=--10V, ID=--3.5A RDS(on)1 Static Drain-to-Source On-State Resistance --30 VDS=--30V, VGS=0V S 250 pF 65 pF Crss 46 pF td(on) tr 5.4 ns 34 ns 28 ns Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--10V, f=1MHz See specified Test Circuit. VDS=--10V, VGS=--10V, ID=--3.5A 24 ns 5 nC 1 nC 1.2 IS=--3.5A, VGS=0V --0.88 nC --1.5 V No.8998-2/6 FW344A Switching Time Test Circuit [N-channel] VDD=15V VIN 0V --10V ID=4.5A RL=3.3Ω VIN D PW=10μs D.C.≤1% VDD= --15V VIN VOUT D PW=10μs D.C.≤1% G 50Ω ID -- VDS V 4.0 4.5V 5 4 3 1.0 2 0.5 1 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V RDS(on) -- VGS 200 150 100 50 0 2 4 6 8 Gate-to-Source Voltage, VGS -- V 0.5 10 IT16699 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Gate-to-Source Voltage, VGS -- V [Nch] Ta=25°C 4.5A 0 0 IT16697 ID=2.0A 250 0 1.0 RDS(on) -- Ta 200 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 300 0.9 °C 1.5 0.2 [Nch] 6 25 VGS=3.0V 0.1 ID -- VGS VDS=10V 7 2.0 0 S 8 2.5 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 50Ω 9 Drain Current, ID -- A 3.0 [Nch] 6.0V 10.0V 8.0V Drain Current, ID -- A 3.5 FW344A P.G S 4.5 4.0 VOUT G FW344A P.G ID= --3.5A RL=4.3Ω VIN Ta= 75° --2 C 5°C 10V 0V [P-channel] 4.5 5.0 IT16698 [Nch] 150 2.0A , I D= 4.0V = VGS 2.0A ,I = 4.5V D = VGS A I =4.5 0.0V, D 1 = V GS 100 50 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT16700 No.8998-3/6 FW344A 5 3 C 25° 2 5°C 1.0 = Ta 7 --2 5 °C 75 3 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 SW Time -- ID 100 0.1 7 5 3 td(off) 2 10 tf td(on) 7 5 tr 3 0 0.2 0.4 0.6 0.8 1.0 1.2 IT16702 Ciss, Coss, Crss -- VDS 1000 [Nch] f=1MHz 7 5 Ciss, Coss, Crss -- pF Ciss 3 2 100 7 Coss 5 Crss 3 2 2 5 7 2 1.0 3 5 Drain Current, ID -- A VGS -- Qg 10 10 7 10 IT16703 [Nch] Drain Current, ID -- A 6 5 4 3 2 1 2 3 5 4 Total Gate Charge, Qg -- nC --3.0V --1.5 --1.0 --0.5 VGS= --2.5V --0.1 --0.2 --0.3 --0.4 --0.5 op er ati on Operation in this area is limited by RDS(on). Ta=25°C Single pulse 1unit When mounted on ceramic substrate (2000mm2×0.8mm) 0.1 7 5 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 ID -- VGS --7 5 7 100 IT16749 [Pch] --6 --2.0 0 DC 1.0 7 5 3 2 VDS= --10V --10 . --2.5 0μ 1m s 10 s 10 ms 0m s 10 s Drain-to-Source Voltage, VDS -- V [Pch] --6. 0V --4 .5V --4 .0V 0V --8.0V --3.0 [Nch] 10 ID=4.5A IT16705 ID -- VDS --3.5 30 IT16704 IDP=18A (PW≤10μs) 10 7 5 3 2 0.01 0.01 6 Drain Current, ID -- A 1 0 20 ASO 100 7 5 3 2 8 7 10 Drain-to-Source Voltage, VDS -- V VDS=10V ID=4.5A 9 0 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 --1.0 IT16750 --5 --4 --3 --2 --1 0 0 --0.5 --1.0 --1.5 --2.0 --2 Ta= 5° 75° C C 3 °C 2 25 Switching Time, SW Time -- ns 5 1.0 0.1 Gate-to-Source Voltage, VGS -- V 3 2 Diode Forward Voltage, VSD -- V [Nch] VDD=15V VGS=10V 7 Drain Current, ID -- A 1.0 7 5 0.01 5 7 10 IT16701 Drain Current, ID -- A 0 3 2 3 2 2 0 [Nch] VGS=0V 5°C 25°C --25° C 7 IS -- VSD 10 7 5 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S [Nch] VDS=10V Ta= 7 | yfs | -- ID 10 --2.5 --3.0 Gate-to-Source Voltage, VGS -- V --3.0 --4.0 IT16751 No.8998-4/6 FW344A ID= --2A --3.5A 200 150 100 50 0 0 --2 --4 --6 --8 Gate-to-Source Voltage, VGS -- V 3 2 C 5° --2 = °C Ta 75 7 5 °C 25 3 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 SW Time -- ID 100 --40 --20 0 20 40 60 80 100 120 140 160 IT16753 IS -- VSD [Pch] VGS=0V 3 2 --1.0 7 5 3 2 --0.1 7 5 5 3 tf 2 10 7 td(on) 5 tr 3 --0.2 --0.4 --0.6 --0.8 --1.0 Ciss, Coss, Crss -- VDS 1000 7 --1.2 IT16755 [Pch] f=1MHz 5 3 Ciss, Coss, Crss -- pF td(off) 0 Diode Forward Voltage, VSD -- V [Pch] VDD= --15V VGS= --10V 7 Switching Time, SW Time -- ns 50 --0.01 5 7 --10 IT16754 Drain Current, ID -- A Ciss 2 100 7 Coss 5 Crss 3 2 2 1.0 --0.1 2 3 5 7 --1.0 2 3 5 Drain Current, ID -- A 7 [Pch] VDS= --10V ID= --3.5A --9 10 --10 --7 --6 --5 --4 --3 --2 --1 1 2 3 4 Total Gate Charge, Qg -- nC --5 5 6 IT16757 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --100 7 5 3 2 Drain Current, ID -- A --8 0 0 IT16756 VGS -- Qg --10 Gate-to-Source Voltage, VGS -- V A --3.5 V, I D= --10.0 V GS= 3 2 2 0 .0A = --2 V, I D --4.5 = VGS 100 --10 7 5 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S [Pch] 5 1.0 = -VGS 150 Ambient Temperature, Ta -- °C VDS= --10V 7 .0A = --2 , ID 4.0V IT16752 | yfs | -- ID 10 200 0 --60 --10 [Pch] 250 Ta=7 5°C 25°C 250 RDS(on) -- Ta 300 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ [Pch] Ta=25°C --25°C RDS(on) -- VGS 300 --10 7 5 3 2 ASO [Pch] IDP= --14A(PW≤10μs) 100 μs 1 10 ms ms 10 0m s ID= --3.5A DC --1.0 7 5 3 2 --0.1 7 5 3 2 --30 IT13192 10 s op era Operation in this area tion is limited by RDS(on). Ta=25°C Single pulse 1unit When mounted on ceramic substrate (2000mm2×0.8mm) --0.01 --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7--10 2 3 Drain-to-Source Voltage, VDS -- V 5 7--100 IT16758 No.8998-5/6 FW344A PD -- Ta [Nch/Pch] When mounted on ceramic substrate (2000mm2×0.8mm) 1.7 1.5 1.4 To t al 1.0 Di ss 1u nit ip ati on 0.5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT16759 PD (FET1) -- PD (FET2) 1.6 Allowable Power Dissipation (FET1), PD -- W Allowable Power Dissipation, PD -- W 2.0 When mounted on ceramic substrate (2000mm2×0.8mm) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Allowable Power Dissipation (FET1), PD -- W 1.6 IT16760 Note on usage : Since the FW344A is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2012. Specifications and information herein are subject to change without notice. PS No.8998-6/6