BFP 136W NPN Silicon RF Transistor • For power amplifier in DECT and PCN systems • fT = 5.5GHz • Gold metalization for high reliability ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 136W SOT-343 PAs Q62702-F1575 1=E 2=C 3=E 4=B Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 150 Base current IB 20 Total power dissipation Ptot TS ≤ 60 °C Values Unit V mA mW 1000 Junction temperature Tj Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 150 °C Thermal Resistance Junction - soldering point 1) RthJS ≤ 90 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Jan-20-1997 BFP 136W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current 12 100 nA - - 50 IEBO µA - - 1 hFE IC = 80 mA, VCE = 5 V Semiconductor Group - ICBO VEB = 1 V, IC = 0 DC current gain µA - VCB = 10 V, IE = 0 Emitter-base cutoff current - ICES VCE = 20 V, VBE = 0 Collector-base cutoff current V 50 2 100 200 Jan-20-1997 BFP 136W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. AC Characteristics Transition frequency fT IC = 80 mA, VCE = 5 V, f = 500 MHz Collector-base capacitance 4 pF - 1.7 2.5 - 0.7 - - 6.8 - Cce VCE = 10 V, f = 1 MHz Emitter-base capacitance 5.5 Ccb VCB = 10 V, f = 1 MHz Collector-emitter capacitance GHz Ceb VEB = 0.5 V, f = 1 MHz F Noise figure dB IC = 30 mA, VCE = 5 V, ZS = ZSopt f = 900 MHz - 2 - f = 1.8 GHz - 3.3 - f = 900 MHz - 15.5 - f = 1.8 GHz - 9.5 - f = 900 MHz - 9 - f = 1.8 GHz - 3 - Power gain 2) Gma IC = 80 mA, VCE = 5 V, ZS = ZSopt ZL = ZLopt Transducer gain |S21e|2 IC = 80 mA, VCE = 5 V, ZS =ZL= 50 Ω Third order intersept point IP3 dBm IC = 80 mA, VCE = 5 V, f = 1.8 MHz ZS = ZSopt, ZL = ZLopt - 33 - 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Jan-20-1997 BFP 136W SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 1.5813 fA BF = 113.32 - NF = 1.0653 - VAF = 12.331 V IKF = 1.4907 A ISE = 46.37 fA NE = 1.4254 - BR = 86.717 - NR = 1.8047 - VAR = 31.901 V IKR = 0.033605 A ISC = 0.0080864 fA NC = 1.8821 - RB = 0 Ω IRB = 0.83992 mA RBM = 1.0078 Ω RE = 0.22081 Ω RC = 0.01636 Ω CJE = 33.904 fF VJE = 0.71518 V MJE = 0.36824 - TF = 20.691 ps XTF = 0.31338 - VTF = 0.10174 V ITF = 4.5579 mA PTF = 0 deg CJC = 2977.4 fF VJC = 1.1381 V MJC = 0.31461 - XCJC = 0.02899 - TR = 1.0033 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 3 - FC = 0.99886 - TNOM 300 K LBI = 0.5 nH LBO = 0.51 nH LEI = 0.18 nH LEO = 0.14 nH LCI = 0.05 nH LCO = 0.35 nH CBE = 78 fF CCB = 48 fF CCE = 244 fF All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitenfunktechnik (IMST) © 1996 SIEMENS AG Package Equivalent Circuit: Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group 4 Jan-20-1997 BFP 136W Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 1200 mW 1000 Ptot 900 TS 800 700 600 TA 500 400 300 200 100 0 0 20 40 60 80 100 120 °C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 2 RthJS 10 2 Ptotmax/PtotDC - K/W 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 -7 10 10 -6 10 -5 10 Semiconductor Group -4 10 -3 10 -2 -1 10 s 10 tp 0 5 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 Jan-20-1997 BFP 136W Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 3.0 7.0 GHz 8V 6.0 pF Ccb fT 5.5 5V 3V 2V 5.0 2.0 4.5 4.0 1.5 1V 3.5 3.0 0.7V 2.5 1.0 2.0 1.5 0.5 1.0 0.5 0.0 0.0 0 2 4 6 8 V VR 11 0 20 40 60 80 100 120 140 mA 170 IC Power Gain Gma, Gms = f(IC) Power Gain Gma, Gms = f(IC) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 12 18 dB dB 10 10V G G 3V 2V 14 10V 9 3V 2V 8 12 1V 7 10 6 1V 0.7V 8 5 4 6 0.7V 3 4 2 2 1 0 0 0 20 40 Semiconductor Group 60 80 100 120 140 mA 170 IC 6 0 20 40 60 80 100 120 140 mA 170 IC Jan-20-1997 BFP 136W Power Gain Gma, Gms = f(VCE):_____ |S21 |2 Intermodulation Intercept Point IP3=f(IC) = f(VCE):--------- (3rd order, Output, ZS=ZL=50Ω) f = Parameter VCE = Parameter, f = 900MHz 40 18 8V IC=80mA dB 0.9GHz G dBm 5V IP3 14 30 12 3V 1.8GHz 10 25 0.9GHz 2V 8 20 6 1V 4 15 2 0 0 2 4 6 8 V 10 0 12 20 40 60 80 100 120 V CE Power Gain Gma, Gms = f(f) Power Gain |S21|2= f(f) VCE = Parameter VCE = Parameter G 160 30 34 dB mA IC IC=80mA dB IC=80mA 24 28 G 20 24 16 20 12 16 8 12 4 8 4 0 0.0 0 10V 1V 0.7V 0.5 1.0 Semiconductor Group 1.5 2.0 2.5 GHz f 10V 2V 1V 0.7V -4 -8 0.0 3.5 7 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 Jan-20-1997