INFINEON Q62702

BFP 136W
NPN Silicon RF Transistor
• For power amplifier in DECT and PCN systems
• fT = 5.5GHz
• Gold metalization for high reliability
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
Package
BFP 136W
SOT-343
PAs
Q62702-F1575
1=E
2=C
3=E
4=B
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
12
Collector-emitter voltage
VCES
20
Collector-base voltage
VCBO
20
Emitter-base voltage
VEBO
2
Collector current
IC
150
Base current
IB
20
Total power dissipation
Ptot
TS ≤ 60 °C
Values
Unit
V
mA
mW
1000
Junction temperature
Tj
Ambient temperature
TA
- 65 ... + 150
Storage temperature
Tstg
- 65 ... + 150
150
°C
Thermal Resistance
Junction - soldering point
1)
RthJS
≤ 90
K/W
1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Jan-20-1997
BFP 136W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 1 mA, IB = 0
Collector-emitter cutoff current
12
100
nA
-
-
50
IEBO
µA
-
-
1
hFE
IC = 80 mA, VCE = 5 V
Semiconductor Group
-
ICBO
VEB = 1 V, IC = 0
DC current gain
µA
-
VCB = 10 V, IE = 0
Emitter-base cutoff current
-
ICES
VCE = 20 V, VBE = 0
Collector-base cutoff current
V
50
2
100
200
Jan-20-1997
BFP 136W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
AC Characteristics
Transition frequency
fT
IC = 80 mA, VCE = 5 V, f = 500 MHz
Collector-base capacitance
4
pF
-
1.7
2.5
-
0.7
-
-
6.8
-
Cce
VCE = 10 V, f = 1 MHz
Emitter-base capacitance
5.5
Ccb
VCB = 10 V, f = 1 MHz
Collector-emitter capacitance
GHz
Ceb
VEB = 0.5 V, f = 1 MHz
F
Noise figure
dB
IC = 30 mA, VCE = 5 V, ZS = ZSopt
f = 900 MHz
-
2
-
f = 1.8 GHz
-
3.3
-
f = 900 MHz
-
15.5
-
f = 1.8 GHz
-
9.5
-
f = 900 MHz
-
9
-
f = 1.8 GHz
-
3
-
Power gain
2)
Gma
IC = 80 mA, VCE = 5 V, ZS = ZSopt
ZL = ZLopt
Transducer gain
|S21e|2
IC = 80 mA, VCE = 5 V, ZS =ZL= 50 Ω
Third order intersept point
IP3
dBm
IC = 80 mA, VCE = 5 V, f = 1.8 MHz
ZS = ZSopt, ZL = ZLopt
-
33
-
2) Gma = |S21/S12| (k-(k2-1)1/2)
Semiconductor Group
3
Jan-20-1997
BFP 136W
SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS =
1.5813
fA
BF =
113.32
-
NF =
1.0653
-
VAF =
12.331
V
IKF =
1.4907
A
ISE =
46.37
fA
NE =
1.4254
-
BR =
86.717
-
NR =
1.8047
-
VAR =
31.901
V
IKR =
0.033605 A
ISC =
0.0080864 fA
NC =
1.8821
-
RB =
0
Ω
IRB =
0.83992
mA
RBM =
1.0078
Ω
RE =
0.22081
Ω
RC =
0.01636
Ω
CJE =
33.904
fF
VJE =
0.71518
V
MJE =
0.36824
-
TF =
20.691
ps
XTF =
0.31338
-
VTF =
0.10174
V
ITF =
4.5579
mA
PTF =
0
deg
CJC =
2977.4
fF
VJC =
1.1381
V
MJC =
0.31461
-
XCJC =
0.02899
-
TR =
1.0033
ns
CJS =
0
fF
VJS =
0.75
V
MJS =
0
-
XTB =
0
-
EG =
1.11
eV
XTI =
3
-
FC =
0.99886
-
TNOM
300
K
LBI =
0.5
nH
LBO =
0.51
nH
LEI =
0.18
nH
LEO =
0.14
nH
LCI =
0.05
nH
LCO =
0.35
nH
CBE =
78
fF
CCB =
48
fF
CCE =
244
fF
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of SIEMENS Small Signal Semiconductors by:
Institut für Mobil-und Satellitenfunktechnik (IMST)
© 1996 SIEMENS AG
Package Equivalent Circuit:
Valid up to 6 GHz
For examples and ready to use parameters please contact your local Siemens distributor or sales office to
obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm
Semiconductor Group
4
Jan-20-1997
BFP 136W
Total power dissipation Ptot = f (TA*, TS)
* Package mounted on epoxy
1200
mW
1000
Ptot
900
TS
800
700
600
TA
500
400
300
200
100
0
0
20
40
60
80
100
120 °C 150
TA ,TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load Ptotmax/PtotDC = f (tp)
10 2
RthJS
10 2
Ptotmax/PtotDC
-
K/W
10 1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 0
-7
10
10
-6
10
-5
10
Semiconductor Group
-4
10
-3
10
-2
-1
10 s 10
tp
0
5
10 0
-7
10
10
-6
10
-5
10
-4
10
-3
10
-2
-1
10 s 10
tp
0
Jan-20-1997
BFP 136W
Collector-base capacitance Ccb = f (VCB)
VBE = vbe = 0, f = 1MHz
Transition frequency fT = f (IC)
VCE = Parameter
3.0
7.0
GHz
8V
6.0
pF
Ccb
fT
5.5
5V
3V
2V
5.0
2.0
4.5
4.0
1.5
1V
3.5
3.0
0.7V
2.5
1.0
2.0
1.5
0.5
1.0
0.5
0.0
0.0
0
2
4
6
8
V
VR
11
0
20
40
60
80
100 120 140 mA 170
IC
Power Gain Gma, Gms = f(IC)
Power Gain Gma, Gms = f(IC)
f = 0.9GHz
f = 1.8GHz
VCE = Parameter
VCE = Parameter
12
18
dB
dB
10
10V
G
G
3V
2V
14
10V
9
3V
2V
8
12
1V
7
10
6
1V
0.7V
8
5
4
6
0.7V
3
4
2
2
1
0
0
0
20
40
Semiconductor Group
60
80
100 120 140 mA 170
IC
6
0
20
40
60
80
100 120 140 mA 170
IC
Jan-20-1997
BFP 136W
Power Gain Gma, Gms = f(VCE):_____
|S21
|2
Intermodulation Intercept Point IP3=f(IC)
= f(VCE):---------
(3rd order, Output, ZS=ZL=50Ω)
f = Parameter
VCE = Parameter, f = 900MHz
40
18
8V
IC=80mA
dB
0.9GHz
G
dBm
5V
IP3
14
30
12
3V
1.8GHz
10
25
0.9GHz
2V
8
20
6
1V
4
15
2
0
0
2
4
6
8
V
10
0
12
20
40
60
80
100
120
V CE
Power Gain Gma, Gms = f(f)
Power Gain |S21|2= f(f)
VCE = Parameter
VCE = Parameter
G
160
30
34
dB
mA
IC
IC=80mA
dB
IC=80mA
24
28
G
20
24
16
20
12
16
8
12
4
8
4
0
0.0
0
10V
1V
0.7V
0.5
1.0
Semiconductor Group
1.5
2.0
2.5
GHz
f
10V
2V
1V
0.7V
-4
-8
0.0
3.5
7
0.5
1.0
1.5
2.0
2.5
GHz
f
3.5
Jan-20-1997