SIEGET 25 BFP 490 NPN Silicon RF Transistor Preliminary data 4 • For high power amplifiers 5 • Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain Gma = 9.5 dB at 1.8 GHz • Transition frequency fT > 17 GHz 3 2 • Gold metalization for high reliability • SIEGET 25 - Line 1 VPW05980 Siemens Grounded Emitter Transistor 25 GHz fT - Line ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 490 AOs 1=B Q62702-F1721 2=E 3=C Package 4=C 5=E SCT-595 Maximum Ratings Parameter Symbol Value Collector-emitter voltage VCEO 4.5 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 1.5 Collector current IC 600 Base current IB 60 Total power dissipation, T S ≤ 85 °C Ptot Junction temperature Tj 150 Ambient temperature TA -65 ...+150 Storage temperature Tstg -65 ...+150 1000 Unit V mA mW °C Thermal Resistance Junction - soldering point 1) RthJS ≤ 65 K/W 1) TS is measured on the emitter lead at the soldering point mounted on alumina 15 mm x 16,7 mm x 0.7 mm Semiconductor Group Semiconductor Group 11 Sep-09-1998 1998-11-01 BFP 490 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 4.5 5 - V I CBO - - 1800 nA I EBO - - 400 µA hFE 50 90 - DC characteristics Collector-emitter breakdown voltage I C = 1 mA, I B = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1.5 V, I C = 0 DC current gain I C = 200 mA, V CE = 3 V V(BR)CEO AC characteristics Transition frequency IC = 300 mA, VCE = 3 V, f = 0.2 GHz IC = 300 mA, VCE = 3 V, f = 0.5 GHz Collector-base capacitance VCB = 2 V, f = 1 MHz Collector-emitter capacitance VCE = 2 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 100 mA, VCE = 2 V, ZS = ZSopt , f = 1.8 GHz Power gain 2) IC = 200 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Insertion power gain IC = 200 mA, VCE = 2 V, f = 0.5 GHz, ZS = ZL = 50Ω Third order intersept point IC = 300 mA, VCE = 3 V, ZS=ZSopt , ZL=ZLopt , f = 1.8 GHz 1dB Compression point IC = 300 mA, VCE = 3 V, f = 1.8 GHz, ZS=ZSopt , ZL=ZLopt - GHz fT Ccb 13 - 17.5 15 3.7 4.7 Cce - 6.3 - Ceb - 10.5 - F - 3.3 - dB Gma - 9 - dB |S21|2 - 8.5 - IP3 - 35 - P-1dB - 26.5 - pF dBm 2) Gma = |S21 / S12| (k-(k2-1)1/2) Semiconductor Group Semiconductor Group 22 Sep-09-1998 1998-11-01 BFP 490 Common Emitter S-Parameters f GHz S11 MAG ANG S21 S12 S22 MAG ANG MAG ANG MAG ANG 75.95 12.96 4.28 2.52 1.36 1.22 0.8 0.61 0.43 144.1 94.9 83.7 77.3 68.1 65.7 55.6 47.1 29.1 0.0053 0.0095 0.0133 0.0188 0.0295 0.0321 0.045 0.0574 0.0811 53.8 25.5 43.6 51.9 56.1 55.7 52.7 48.1 36.6 0.7723 0.8743 0.8761 0.8777 0.8825 0.9944 0.8861 0.8878 0.884 -77.6 -167.1 -179.6 175.7 169.5 168.2 162.5 157.7 146.7 63.82 14.24 4.735 2.788 1.515 1.358 0.891 0.672 0.47 153.8 98.6 85.3 78.7 69.8 67.5 57.7 49.4 31.7 0.003 0.007 0.0119 0.0179 0.0294 0.0324 0.0454 0.0581 0.0819 38.4 34.6 53.6 59.4 60.8 59.8 55.5 50.3 37.9 0.4321 0.8696 0.8834 0.8879 0.892 0.8952 0.8953 0.8968 0.8928 -91.1 -167 -179.5 175.8 169.5 168.1 162.2 157.5 146.5 V CE = 2V, IC = 150mA 0.01 0.1 0.3 0.5 0.9 1 1.5 2 3 0.648 0.916 0.921 0.92 0.921 0.919 0.928 0.926 0.924 -159.8 -178.5 173.7 168.2 159.1 157 147.1 138.8 122.8 V CE = 2V, IC = 300mA 0.01 0.1 0.3 0.5 0.9 1 1.5 2 3 0.7274 0.9158 0.9215 0.9193 0.9224 0.9201 0.9373 0.9265 0.9204 -172.3 -179.6 173.1 167.9 158.9 156.7 147 138.6 122.7 For more and detailed S- parameters please contact your local Siemens distributor or sales office to obtain a Siemens Application Notes CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group Semiconductor Group 33 Sep-09-1998 1998-11-01 BFP 490 SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 0.451 fA BF = 114.96 - NF = 1.1472 - VAF = 24.665 V IKF = 0.76939 A ISE = 1.1591 pA NE = 1.9962 - BR = 21.04 - NR = 1.3531 - VAR = 16.035 V IKR = 0.090033 A ISC = 3.7479 A NC = 1.339 - RB = 1.0754 Ω IRB = 0.17683 mA RBM = 2.1262 Ω RE = 0.32476 RC = 0.10737 Ω CJE = 1.227 fF VJE = 0.93266 V MJE = 0.36885 - TF = 3.9147 ps XTF = 0.61664 - VTF = 0.27348 V ITF = 3.2793 mA PTF = 0 deg CJC = 6.12521 fF VJC = 0.9832 V MJC = 0.34153 - XCJC = 0.3 - TR = 1.115 ns CJS = 0 F VJS = 0 V MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 0 - FC = 0.75835 - TNOM 300 K - RS = tbd Ω L BI = 0.85 nH L BO = 0.3 nH L EI = 0.15 nH L EO = 0.04 nH L CI = 0.39 nH L CO = 0.2 nH C BE = 150 fF C CB = 2.2 fF C CE = 500 fF C’-E’-Diode Data (Berkley-SPICE 2G.6 Syntax) : IS = tbd fA N= tbd All parameters are ready to use, no scalling is necessary Package Equivalent Circuit: C CB L BO L BI B B’ Transistor Chip E’ C BE C’ L CI L CO C C’-E’Diode C CE L EI L EO E EHA07389 Valid up to 3GHz The SOT-595 package has two emitter leads. To avoid high complexity of the package equivalent circuit, both leads are combined in one electrical connection. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitentechnik (IMST) 1996 SIEMENS AG For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group Semiconductor Group 44 Sep-09-1998 1998-11-01 BFP 490 For non-linear simulation: • Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators. • If you need simulation of thereverse characteristics, add the diode with the C’-E’- diode data between collector and emitter. • Simulation of package is not necessary for frequenties < 100MHz. For higher frequencies add the wiring of package equivalent circuit around the non-linear transistor and diode model. Note: • This transistor is constructed in a common emitter configuration. This feature causes an additional reverse biased diode between emitter and collector, which does not effect normal operation. C B E E EHA07307 Transistor Schematic Diagram The common emitter configuration shows the following advantages: • Higher gain because of lower emitter inductance. • Power is dissipated via the grounded emitter leads, because the chip is mounted on copper emitter leadframe. Please note, that the broadest lead is the emitter lead. The AC characteristics are verified by random sampling. Semiconductor Group Semiconductor Group 55 Sep-09-1998 1998-11-01 BFP 490 Total power dissipation P tot = f (T A*, TS) Transition frequency fT = f (IC) * Package mounted on epoxy f = 200 MHz VCE = parameter in V 20 1200 mW GHz 3 1 1000 16 0.5 TS 800 14 fT P tot 900 700 12 10 600 TA 500 8 400 6 300 4 200 2 100 0 0 20 40 60 80 100 120 °C 0 0 150 50 100 150 200 250 300 350 400 mA TA,TS 500 IC Permissible Pulse Load Permissible Pulse Load R thJS = f (tp) Ptotmax/P totDC = f (tp) 10 2 10 2 - RthJS Pmax / PDC K/W 10 1 10 0 -7 10 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -7 10 0 tp Semiconductor Group Semiconductor Group D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 66 Sep-09-1998 1998-11-01 BFP 490 Power gain G ma, G ms, |S 21|2 = f (f) VCE = 2 V, I C = 200 mA Power gain Gma, Gms = f (I C) VCE = 2V f = parameter in GHz 24 48 dB dB 20 0.5 36 18 32 G G 28 24 20 0.8 14 1 12 Gms 16 16 10 12 1.8 2 8 8 Gma 4 2.5 6 0 4 -4 -8 -12 0 2 |S21 |2 1 2 3 4 5 GHz 0 0 7 50 100 150 200 250 300 350 400 mA f 500 IC Power gain G ma,Gms = f (VCE) I C=200mA Collector-base capacitance Ccb = f (VCB) VBE = 0, f = 1MHz f = parameter in GHz 10 26 dB 22 pF 0.5 20 Ccb G 18 0.8 16 6 1 14 12 4 1.8 10 2 8 2.5 6 2 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V 0 0.0 4.5 VCE Semiconductor Group Semiconductor Group 0.5 1.0 1.5 2.0 2.5 3.0 V 4.0 VCB 77 Sep-09-1998 1998-11-01 BFP 490 Noise figure F = f (IC) VCE = 2 V, ZS = Z Sopt 6.5 dB 5.5 5.0 F 4.5 4.0 3.5 3.0 2.5 2.0 1.5 f = 0.45 GHz f = 0.9 GHz f = 1.8 GHz 1.0 0.5 0.0 0 50 100 150 200 250 300 350 400 mA 500 IC Semiconductor Group Semiconductor Group 88 Sep-09-1998 1998-11-01