IL400 Vishay Semiconductors Optocoupler, PhotoSCR Output, 400 VRM, 1 A surge current Features • • • • • • • • • Turn on current (IFT), 5.0 mA typical Gate trigger current (IGT), 20 µA Surge anode current, 1.0 AMP Blocking voltage, 400 V Gate trigger voltage (VGT), 0.6 Volt Isolation Test Voltage, 5300 VRMS Solid State Reliability Standard DIP Package Lead-free component A 1 6 G C 2 5 A NC 3 4 C e3 i179006 • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Agency Approvals • UL1577, File No. E52744 System Code H or J, Double Protection • DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 Pb Pb-free Order Information Part Remarks IL400 Blocking voltage, 400 V, DIP-6 IL400-X007 Blocking voltage, 400 V, SMD-6 (option 7) IL400-X009 Blocking voltage, 400 V, SMD-6 (option 9) For additional information on the available options refer to Option Information. Description The IL400 is an optically coupled SCR with a gallium arsenide infrared emitter and a silicon photo SCR sensor. Switching can be achieved while maintaining a high degree of isolation between triggering and load circuits. The IL400 can be used in SCR triac and solid state relay applications where high blocking voltages and low input current sensitivy are required. Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Symbol Value Unit Peak reverse voltage Parameter VRM 6.0 V Peak forward current (100 µs, 1 % duty cycle) IFM 1.0 A Forward continuous current Power dissipation Derate linearly from 25 °C Document Number 83626 Rev. 1.5, 26-Oct-04 Test condition IF 60 mA Pdiss 100 mW 1.3 mW/°C www.vishay.com 1 IL400 Vishay Semiconductors Output Parameter Test condition Symbol Value VRG 6.0 V Anode voltage (DC or AC Peak) VA 400 V Anode current IA 100 mA Reverse gate voltage Unit Surge anode current (10 ms duration) IAS 1.0 A Surge gate current (5.0 ms duration) IGS 200 mA Pdiss 200 mW 2.11 mW/°C Power dissipation Derate linearly from 25 °C Coupler Parameter Test condition Symbol Value Unit VISO 5300 VRMS VIO = 500 V, Tamb = 25 °C RIO > 1012 Ω VIO = 500 V, Tamb = 100 °C RIO 12 Isolation voltage Isolation resistance > 10 Total package dissipation Derate linearly from 25 ° Ω 250 mW 2.63 mW/°C Operating temperature Tamb - 55 to +100 °C Storage temperature Tstg - 55 to +150 °C Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Test condition Symbol Forward voltage IF = 20 mA VF Reverse voltage I R = 10 µA VR Reverse current VR = 5.0 V IR Min Typ. Max 1.2 1.5 5.0 Unit V V 10 µA Max Unit Output Symbol Min Forward blocking voltage Parameter RGK = 10 KΩ , TA = 100 °C , Id = 150 µA Test condition VDRM 400 Typ. V Reverse blocking voltage RGK = 10 KΩ , TA = 100 °C , Id = 150 µA VDRRM 400 V On-state voltage IT = 100 mA Holding current RGK = 27 KΩ , VFX = 50 V IH Gate trigger voltage VFX = 100 V, RGK = 27 KΩ, RL = 10 KΩ VGT 0.6 Forward leakage current RGK = 27 KΩ , IF = 0 ID Vt 1.2 V 500 µA 1.0 V 0.2 2.0 µA Reverse leakage current RGK = 27 KΩ , IF = 0 IR 0.2 2.0 µA Gate trigger current VFX = 100 V, RGK = 27 KΩ, RL = 10 KΩ IGT 20 50 µA www.vishay.com 2 Document Number 83626 Rev. 1.5, 26-Oct-04 IL400 Vishay Semiconductors Coupler Symbol Min Typ. Max Unit Turn-on current Parameter VFX = 100 V Test condition IFT 0.5 5.0 10.0 mA Capacitance (input-output) f = 1.0 MHz CIO 2 pF Package Dimensions in Inches (mm) 3 2 1 4 5 6 pin one ID .248 (6.30) .256 (6.50) ISO Method A .335 (8.50) .343 (8.70) .300 (7.62) typ. .048 (0.45) .022 (0.55) .039 (1.00) Min. .130 (3.30) .150 (3.81) 4° typ. .018 (0.45) .022 (0.55) 18° .031 (0.80) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. 3°–9° .114 (2.90) .130 (3.0) .010 (.25) typ. .300–.347 (7.62–8.81) i178004 Option 7 Option 9 .375 (9.53) .395 (10.03) .300 (7.62) TYP. .300 (7.62) ref. .028 (0.7) MIN. .180 (4.6) .160 (4.1) .0040 (.102) .0098 (.249) .315 (8.0) MIN. .331 (8.4) MIN. .406 (10.3) MAX. Document Number 83626 Rev. 1.5, 26-Oct-04 .012 (.30) typ. .020 (.51) .040 (1.02) .315 (8.00) min. 15° max. 18494 www.vishay.com 3 IL400 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 4 Document Number 83626 Rev. 1.5, 26-Oct-04