VISHAY FCSP240LTR

VS-FCSP240LTR
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Vishay Semiconductors
FlipKY®,
1.5 A Chip Scale Package Schottky Barrier Rectifier
FEATURES
• Ultra low VF per footprint area
• Low leakage
• Low thermal resistance
• One-fifth footprint of SMA
• Super low profile (0.6 mm)
• Available tested on tape and reel
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
FlipKY®
• Reverse polarity protection
• Current steering
• Freewheeling
• Flyback
• Oring
PRODUCT SUMMARY
IF(AV)
1.5 A
VR
40 V
VF at IF
0.42 V
IRM max. at 25 °C
80 μA
IRM max. at 125 °C
20 mA
TJ max.
150 °C
EAS
10 mJ
DESCRIPTION
Vishay’s FlipKY® product family utilizes wafer level
chip scale packaging to deliver Schottky diodes with the
lowest VF to PCB footprint area in industry. The four
bump 1.5 mm x 1.5 mm devices can deliver up to 1.5 A and
occupy only 2.3 mm2 of board space. The anode and
cathode connections are made through solder bump pads
on one side of the silicon enabling designers to strategically
place the diodes on the PCB. This design not only minimizes
board space but also reduces thermal resistance and
inductance, which can improve overall circuit efficiency.
Typical applications include hand-held, portable equipment
such as cell phones, MP3 players, bluetooth, GPS, PDAs,
and portable hard disk drives where space savings and
performance are crucial.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VRRM
IF(AV)
UNITS
40
V
1.5
Rectangular waveform
IFSM
VF
MAX.
250
1.5 Apk, TJ = 125 °C
TJ
A
0.42
V
- 55 to 150
°C
VS-FCSP240LTR
UNITS
40
V
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
Revision: 08-Jun-11
SYMBOL
VR
VRWM
Document Number: 94498
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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VS-FCSP240LTR
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
Maximum average forward current
IF(AV)
50 % duty cycle at TPCB = 97 °C, rectangular waveform
1.5
Maximum peak one cycle
non-repetitive surge current at 25 °C
5 µs sine or 3 µs rect. pulse
250
IFSM
Non-repetitive avalanche energy
EAS
TJ = 25 °C, IAS = 2.0 A, L = 5.0 mH
10
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
2.0
A
Repetitive avalanche current
10 ms sine or 6 ms rect. pulse
Following any rated
load condition and with
rated VRRM applied
UNITS
A
21
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
1.5 A
Maximum forward voltage drop
See fig. 1
VFM
(1)
1.5 A
IRM (1)
Maximum voltage rate of charge
dV/dt
0.55
0.60
0.37
0.42
0.51
0.57
VR = Rated VR
15
80
VR = 20 V
3.5
20
VR = 10 V
2
10
VR = 5 V
1.5
5
VR = Rated VR
UNITS
V
µA
9
20
VR = 20 V
3.5
8
VR = 10 V
2.5
6
VR = 5 V
2
5
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
-
160
pF
Rated VR
-
10 000
V/µs
TJ = 125 °C
CT
0.49
TJ = 125 °C
TJ = 25 °C
Maximum junction capacitance
MAX.
0.45
TJ = 25 °C
3A
3A
Maximum reverse leakage current
See fig. 2
TYP.
mA
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TJ (1), TStg
Typical thermal resistance,
junction to PCB
Maximum thermal resistance,
junction to ambient
RthJL (2)
TEST CONDITIONS
DC operation
VALUES
UNITS
- 55 to 150
°C
40
°C/W
RthJA
62
Notes
(1)
(2)
dP tot
1
------------- < -------------- thermal runaway condition for a diode on its own heatsink
dT J R thJA
Mounted 1" square PCB
Revision: 08-Jun-11
Document Number: 94498
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-FCSP240LTR
www.vishay.com
Vishay Semiconductors
Allowable Case Temperature (°C)
IF - Instantaneous
Forward Current (A)
10
1
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
0
140
130
120
110
100
90
70
Square wave (D = 0.50)
80 % rated VR applied
60
See note (1)
80
0.2
0.4
0.6
0.8
1.0
0
1.2
0.5
1.0
1.5
2.0
2.5
VFM - Forward Voltage Drop (V)
IF(AV) - Average Forward Current (A)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 4 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
1.5
100
TJ = 150 °C
Average Power Loss (W)
IR - Reverse Current (mA)
D = 3/4
D = 1/2
D = 1/3
D = 1/4
D = 1/5
DC
150
50
0.1
10
TJ = 125 °C
TJ = 100 °C
1
TJ = 75 °C
0.1
TJ = 50 °C
0.01
TJ = 25 °C
0.001
D = 3/4
D = 1/2
D = 1/3
D = 1/4
D = 1/5
1.0
0.5
RMS limit
DC
0
0
5
10
15
20
25
30
35
0
40
0.5
1.0
1.5
2.0
2.5
VR - Reverse Voltage (V)
IF(AV) - Average Forward Current (A)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 5 - Forward Power Loss Characteristics (Per Leg)
1000
IFSM - Non-Repetitive
Surge Current (A)
1000
CT - Junction Capacitance (pF)
160
TJ = 25 °C
100
At any rated load condition
and with rated VRRM applied
following surge
100
10
10
0
5
10
15
20
25
30
35
40
10
100
1000
10 000
VR - Reverse Voltage (V)
tp - Square Wave Pulse Duration (µs)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage (Per Leg)
Fig. 6 - Maximum Non-Repetitive Surge Current (Per Leg)
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at 80 % VR applied
Revision: 08-Jun-11
Document Number: 94498
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-FCSP240LTR
www.vishay.com
Vishay Semiconductors
L
D.U.T.
IRFP460
Rg = 25 Ω
Current
monitor
High-speed
switch
Freewheel
diode
+ Vd = 25 V
40HFL40S02
Fig. 7 - Unclamped Inductive Test Circuit
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95282
Part marking information
www.vishay.com/doc?95281
Packaging information
www.vishay.com/doc?95062
Revision: 08-Jun-11
Document Number: 94498
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay High Power Products
FlipKY® 1 A/1.5 A (Large Bump Pad Design)
DIMENSIONS in millimeters
Ball assignments
0.10 (0.004) C
2x
1.524
B
4
A
1 = Cathode
2 = Cathode
3 = Anode
4 = Anode
0.600
0.520
0.205
0.175
0.10 (0.004) C
2x
3
2 x 0.400
1.524
1.524
0.300
1
2
0.800
4x
0.395
0.355
Recommended footprint
0.800
Cathode ball 1
Cathode ball 2
0.800
Anode ball 4
Anode ball 3
4 x Ø 0.35
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Controlling dimension: millimeter
Document Number: 95282
Revision: 02-Apr-08
For technical questions concerning discrete products, contact: [email protected]
For technical questions concerning module products, contact: [email protected]ishay.com
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Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
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