VISHAY SI2337DS

New Product
Si2337DS
Vishay Siliconix
P-Channel 80-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 80
ID (A)a
rDS(on) (Ω)
0.270 at VGS = - 10 V
- 2.2
0.303 at VGS = - 6 V
- 2.1
Qg (Typ)
• TrenchFET® Power MOSFET
RoHS
7
COMPLIANT
TO-236
(SOT-23)
S
G
1
3
S
D
G
2
Top View
Si2337DS (E7)*
D
*Marking Code
Ordering Information: Si2337DS-T1-E3 (Lead (Pb)-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 80
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
- 2.2
TC = 70 °C
- 1.75
TA = 25 °C
ID
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
- 0.96b, c
-7
IDM
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 70 °C
TA = 25 °C
IAS
- 0.63b, c
11
EAS
6.0
mJ
2.5
1.6
PD
W
0.76b, c
TA = 70 °C
0.48b, c
- 50 to 150
TJ, Tstg
Operating Junction and Storage Temperature Range
A
- 2.1
IS
TC = 25 °C
Maximum Power Dissipation
V
- 1.2b, c
TA = 70 °C
Pulsed Drain Current
Unit
Soldering Recommendations (Peak Temperature)d, e
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Maximum Junction-to-Ambientb, d
t ≤ 10 sec
RthJA
120
166
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
40
50
Unit
°C/W
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 Board.
c. t = 10 sec.
d. Maximum under Steady State conditions is 166 °C/W.
Document Number: 73533
S-71597-Rev. C, 30-Jul-07
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New Product
Si2337DS
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
VDS
VGS = 0 V, ID = - 250 µA
- 80
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = - 250 µA
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
rDS(on)
Forward Transconductancea
gfs
V
- 35.8
mV/°C
5.45
-2
-4
V
± 100
nA
VDS = - 80 V, VGS = 0 V
-1
VDS = - 80 V, VGS = 0 V, TJ = 55 °C
- 10
VDS ≥ 5 V, VGS = - 10 V
-7
µA
A
VGS = - 10 V, ID = - 1.2 A
0.216
0.270
VGS = - 6 V, ID = - 1.1 A
0.242
0.303
VDS = - 15 V, ID = - 1.2 A
4.3
Ω
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Rg
500
VDS = - 40 V, VGS = 0 V, f = 1 MHz
VDS = - 40 V, VGS = - 10 V, ID = - 1.2 A
VDS = - 40 V, VGS = - 6 V, ID = - 1.2 A
td(off)
11
17.0
7
11.0
2.1
f = 1 MHz
VDD = - 40 V, RL = 42 Ω
ID ≅ - 0.96 A, VGEN = - 10 V, Rg = 1 Ω
Ω
4.8
10
15
15
23
20
30
tf
15
23
td(on)
15
23
18
27
20
30
12
18
tr
td(off)
nC
3.2
td(on)
tr
pF
40
25
VDD = - 40 V, RL = 42 Ω
ID ≅ - 0.96 A, VGEN = - 6 V, Rg = 1 Ω
tf
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
- 2.1
-7
IS = 0.63 A
IF = 0.63 A, di/dt = 100 A/µs, TJ = 25 °C
A
- 0.8
- 1.2
V
30
45
ns
45
70
nC
25
5
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73533
S-71597-Rev. C, 30-Jul-07
New Product
Si2337DS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
7
7
VGS = 10 thru 6 V
6
5
I D - Drain Current (A)
I D - Drain Current (A)
6
VGS = 5 V
4
3
5
4
3
TA = - 55 °C
2
2
1
1.00
2.00
3.00
TA = 125 °C
1
VGS = 4 V
0
0.00
TA = 25 °C
0
0.0
4.00
1.0
2.0
3.0
4.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
5.0
700
0.30
VGS = 6 V
0.25
C - Capacitance (pF)
rDS(on) - On-Resistance (Ω)
600
0.20
VGS = 10 V
Ciss
500
400
300
200
0.15
Crss
100
0
0.10
0
1
2
3
4
5
6
0
7
10
20
30
40
50
60
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
70
80
2.0
ID =1.2 A
1.8
ID = 1.2 A
VGS = 10 V
8
VDS = 40 V
rDS(on) - On-Resistance
(Normalized)
V GS - Gate-to-Source Voltage (V)
Coss
6
VDS = 64 V
4
1.6
1.4
VGS = 6 V
1.2
1.0
0.8
2
0.6
0
0
2
4
6
8
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 73533
S-71597-Rev. C, 30-Jul-07
10
12
0.4
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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New Product
Si2337DS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.6
rDS(on) - Drain-to-Source On-Resistance (Ω)
20.0
I S - Source Current (A)
10.0
TJ = 150 °C
TJ = 25 °C
1.0
0.1
0.00
ID = 1.2 A
0.5
TA = 125 °C
0.4
0.3
TA = 25 °C
0.2
0.1
0.2
0.4
0.6
0.8
1.0
3
1.2
4
16
3.4
14
ID = 250 µA
Power (W)
VGS(th) (V)
12
3.0
2.8
10
8
2.6
6
2.4
4
2.2
2
- 25
0
25
50
75
100
7
On-Resistance vs. Gate-to-Source Voltage
3.6
2.0
- 50
6
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
3.2
5
125
0
0.01
150
0.1
1
10
100
1000
TJ - Temperature (°C)
Time (sec)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
I D - Drain Current (A)
10
*Limited by rDS(on)
1 ms
1
10 ms
100 ms
0.1
1s
TA = 25 °C
Single Pulse
0.01
10 s
dc
0.001
0.1
1
10
100
1000
VDS - Drain-to-Source Voltage (V)
*VGS > minimum VGS at which rDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 73533
S-71597-Rev. C, 30-Jul-07
New Product
Si2337DS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.5
2.8
2.4
2.0
1.5
1.6
Power
ID - Drain Current (A)
2.0
1.2
1.0
0.8
0.5
0.4
0.0
0.0
0
25
50
75
100
125
150
25
50
75
100
125
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power Derating
150
IC - Peak Avalanche Current (A)
10
TA
1
1.0E-6
L
IA
BV - V DD
10.0E-6
100.0E-6
1.0E-3
10.0E-3
TA - Time In Avalanche (sec)
Single Pulse Avalanche Capability
*The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Document Number: 73533
S-71597-Rev. C, 30-Jul-07
www.vishay.com
5
New Product
Si2337DS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 166 °C/W
0.02
3. TJM - T A = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (sec)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?73533.
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Document Number: 73533
S-71597-Rev. C, 30-Jul-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
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Document Number: 91000
Revision: 18-Jul-08
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