TO-220F 5A Triac TM541S-L, TM561S-L ■ Features External Dimensions 16.9±0.3 0.2 8.4± ●RMS on-state current: IT(RMS)=5A ) 0.8±0.2 ●Gate trigger current: IGT=20mA max (MODE , , C 0.5 1.35± 0.15 1.35±0.15 +0.2 0.85 – 0.1 3.9± 13.0 min ●UL approved type available 0.2 a b 0.2 ●Isolation voltage: VISO=1500V(50Hz Sine wave, RMS) 4.2± 2.8 10.0±0.2 4.0±0.2 φ 3.3±0.2 (Unit: mm) ●Repetitive peak off-state voltage: VDRM=400, 600V 2.54 2.54 0.2 2.2± 2.4± +0.2 0.45 – 0.1 (1). Terminal 1 (T1) (2). Terminal 2 (T2) (3). Gate (G) (1) (2) (3) 0.2 a. Part Number b. Lot Number Weight: Approx. 2.1g ■Absolute Maximum Ratings Parameter Symbol Ratings TM541S-L TM561S-L Unit Conditions Repetitive peak off-state voltage VDRM RMS on-state current IT(RMS) 5.0 A Conduction angle 360°, Tc=104°C Surge on-state current ITSM 50 A 50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C Peak gate voltage VGM 10 V Peak gate current IGM 2 A Peak gate power loss PGM 5 W Average gate power loss 400 600 V PG(AV) 0.5 W Junction temperature Tj – 40 to +125 °C Storage temperature Tstg – 40 to +125 °C Isolation voltage VISO 1500 Vrms 50Hz Sine wave, RMS, Terminal to Case, 1 min. ■Electrical Characteristics Parameter Symbol Off-state current IDRM On-state voltage VTM (Tj=25°C, unless otherwise specified) Ratings min typ max 0.3 2.0 0.1 1.6 0.7 Gate trigger voltage VGT Unit Conditions mA VD=VDRM, RGK= ∞, Tj=25°C V VD=VDRM, RGK= ∞, Tj=125°C Pulse test, ITM=7A 0.7 2.0 0.8 2.0 V VD=6V, RL=10Ω, TC=25°C Gate trigger current 8 IGT 10 Holding current Thermal resistance 34 VGD IH Rth – – – – + + + T2 , G T2 , G T2 , G 20 20 20 mA VD=6V, RL=10Ω, TC=25°C + – – – – + T2 , G T2 , G T2 , G 15 Gate non-trigger voltage + + T2 , G 0.8 7 + T2 , G 2.0 V 0.2 mA 5 4.0 °C/W VD=1/2 × VDRM, Tj=125°C VD=6V Junction to case TM541S-L, TM561S-L vT – iT Characteristics (max) IT(RMS) – PT(AV) Characteristics 100 10 Tj=125°C Tj=25°C 1 0.5 0.5 1.0 1.5 2.0 2.5 3.0 60 40 20 0 0.5 1.0 1 1.5 2.0 75 50 25 0 1 2 3 4 5 0 6 Full-cycle sinewave Conduction angle : 360° 0 2.5 3.0 RMS on-state current IT(RMS) (A) 1 2 3 4 5 IGT temperature characteristics (Typical) (Typical) (VD=6V, RL=10Ω) 1.2 MODE MODE MODE 1.0 0.6 0.4 0.2 0 25 50 (VD=6V, RL=10Ω) 100 50 0.8 0 –40 6 RMS on-state current IT(RMS) (A) VGT temperature characteristics Gate trigger voltage VGT (V) Full-cycle sinewave Conduction angle : 360° Self-supporting Natural cooling No wind 80 0 2 100 RMS on-state current IT(RMS) (A) 140 100 3 vT ( V ) IT(RMS) – Ta Ratings 120 4 0 3.5 125 5 Gate trigger current IGT (mA) 5 On-state voltage Ambient temperature Ta (°C) 150 Full-cycle sinewave Conduction angle : 360° 6 Case temperature TC (°C) Average on-state power PT(AV) (W) On-state current iT (A) 50 0.1 IT(RMS) – Tc Ratings 7 75 100 Junction temperature Tj (°C) 125 MODE MODE MODE 10 5 1 – 40 0 25 50 75 100 125 Junction temperature Tj (°C) Transient thermal resistance Characteristics Transient thermal resistance rth (°C/W) 100 Junction to operating environment 10 Junction to case 1 0.1 0.1 1 10 10 2 10 3 10 4 10 5 t, Time (ms) 35