SANKEN TM561S-L

TO-220F 5A Triac
TM541S-L, TM561S-L
■ Features
External Dimensions
16.9±0.3
0.2
8.4±
●RMS on-state current: IT(RMS)=5A
)
0.8±0.2
●Gate trigger current: IGT=20mA max (MODE , ,
C 0.5
1.35±
0.15
1.35±0.15
+0.2
0.85 – 0.1
3.9±
13.0 min
●UL approved type available
0.2
a
b
0.2
●Isolation voltage: VISO=1500V(50Hz Sine wave, RMS)
4.2±
2.8
10.0±0.2
4.0±0.2
φ 3.3±0.2
(Unit: mm)
●Repetitive peak off-state voltage: VDRM=400, 600V
2.54
2.54
0.2
2.2±
2.4±
+0.2
0.45 – 0.1
(1). Terminal 1 (T1)
(2). Terminal 2 (T2)
(3). Gate (G)
(1) (2) (3)
0.2
a. Part Number
b. Lot Number
Weight: Approx. 2.1g
■Absolute Maximum Ratings
Parameter
Symbol
Ratings
TM541S-L
TM561S-L
Unit
Conditions
Repetitive peak off-state voltage
VDRM
RMS on-state current
IT(RMS)
5.0
A
Conduction angle 360°, Tc=104°C
Surge on-state current
ITSM
50
A
50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C
Peak gate voltage
VGM
10
V
Peak gate current
IGM
2
A
Peak gate power loss
PGM
5
W
Average gate power loss
400
600
V
PG(AV)
0.5
W
Junction temperature
Tj
– 40 to +125
°C
Storage temperature
Tstg
– 40 to +125
°C
Isolation voltage
VISO
1500
Vrms
50Hz Sine wave, RMS, Terminal to Case, 1 min.
■Electrical Characteristics
Parameter
Symbol
Off-state current
IDRM
On-state voltage
VTM
(Tj=25°C, unless otherwise specified)
Ratings
min
typ
max
0.3
2.0
0.1
1.6
0.7
Gate trigger voltage
VGT
Unit
Conditions
mA
VD=VDRM, RGK= ∞, Tj=25°C
V
VD=VDRM, RGK= ∞, Tj=125°C
Pulse test, ITM=7A
0.7
2.0
0.8
2.0
V
VD=6V, RL=10Ω, TC=25°C
Gate trigger current
8
IGT
10
Holding current
Thermal resistance
34
VGD
IH
Rth
–
–
–
–
+
+
+
T2 , G
T2 , G
T2 , G
20
20
20
mA
VD=6V, RL=10Ω, TC=25°C
+
–
–
–
–
+
T2 , G
T2 , G
T2 , G
15
Gate non-trigger voltage
+
+
T2 , G
0.8
7
+
T2 , G
2.0
V
0.2
mA
5
4.0
°C/W
VD=1/2 × VDRM, Tj=125°C
VD=6V
Junction to case
TM541S-L, TM561S-L
vT – iT Characteristics (max)
IT(RMS) – PT(AV) Characteristics
100
10
Tj=125°C
Tj=25°C
1
0.5
0.5
1.0
1.5
2.0
2.5
3.0
60
40
20
0
0.5
1.0
1
1.5
2.0
75
50
25
0
1
2
3
4
5
0
6
Full-cycle sinewave
Conduction angle : 360°
0
2.5
3.0
RMS on-state current IT(RMS) (A)
1
2
3
4
5
IGT temperature characteristics
(Typical)
(Typical)
(VD=6V, RL=10Ω)
1.2
MODE
MODE
MODE
1.0
0.6
0.4
0.2
0
25
50
(VD=6V, RL=10Ω)
100
50
0.8
0
–40
6
RMS on-state current IT(RMS) (A)
VGT temperature characteristics
Gate trigger voltage VGT (V)
Full-cycle sinewave
Conduction angle : 360°
Self-supporting
Natural cooling
No wind
80
0
2
100
RMS on-state current IT(RMS) (A)
140
100
3
vT ( V )
IT(RMS) – Ta Ratings
120
4
0
3.5
125
5
Gate trigger current IGT (mA)
5
On-state voltage
Ambient temperature Ta (°C)
150
Full-cycle sinewave
Conduction angle : 360°
6
Case temperature TC (°C)
Average on-state power PT(AV) (W)
On-state current
iT (A)
50
0.1
IT(RMS) – Tc Ratings
7
75
100
Junction temperature Tj (°C)
125
MODE
MODE
MODE
10
5
1
– 40
0
25
50
75
100
125
Junction temperature Tj (°C)
Transient thermal resistance
Characteristics
Transient thermal resistance
rth (°C/W)
100
Junction to
operating
environment
10
Junction to
case
1
0.1
0.1
1
10
10 2
10 3
10 4
10 5
t, Time (ms)
35