BFS460L6 NPN Silicon RF TWIN Transistor 4 • High fT of 22 GHz 3 5 • For low voltage / low current applications 2 6 • Ideal for VCO modules and low noise amplifiers 1 • Low noise figure: 1.1 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package • Excellent ESD performance • Built in 2 transistors (TR1, TR2: die as BFR460L3) * Short-term description 6 T R 1 1 5 T R 2 2 4 3 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFS460L6 Marking Pin Configuration Package AB 1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value Unit V TA > 0 °C 4.5 TA ≤ 0 °C 4.2 Collector-emitter voltage VCES 15 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 1.5 Collector current IC 50 Base current IB 5 Total power dissipation1) Ptot 200 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature T stg -65 ... 150 mA TS ≤ 104°C 1T is measured on the collector lead at the soldering point to the pcb S 1 Jun-15-2004 BFS460L6 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point 1) RthJS ≤ 230 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. 4.5 5.8 - V ICES - - 10 µA ICBO - - 100 nA IEBO - - 1 µA hFE 90 120 160 DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain - IC = 20 mA, VCE = 3 V, pulse measured 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 Jun-15-2004 BFS460L6 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT 16 22 - Ccb - 0.33 0.5 Cce - 0.17 - Ceb - 0.57 - GHz IC = 30 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance pF VCB = 3 V, f = 1 MHz, emitter grounded Collector emitter capacitance VCE = 3 V, f = 1 MHz, base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, collector grounded Noise figure dB F IC = 5 mA, VCE = 3 V, ZS = ZSopt, f = 1.8 GHz - 1.1 - IC = 5 mA, VCE = 3 V, ZS = ZSopt, f = 3 GHz - 1.4 - Power gain, maximum stable1) G ms dB IC = 20 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz - 14.5 - IC = 20 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt , f = 3 GHz - 10 - - 12.5 - - 9 - IP 3 - 28 - P-1dB - 12 - |S21e|2 Transducer gain IC = 20 mA, VCE = 3 V, ZS = ZL = 50Ω, f = 1.8 GHz IC = 20 mA, VCE = 3 V, ZS = ZL = 50Ω, f = 3 GHz Third order intercept point at output2) dBm VCE = 3 V, I C = 20 mA, ZS = ZL = 50Ω, f = 1,8 GHz 1dB Compression point at output IC = 20 mA, VCE = 3 V, ZS = ZL = 50Ω , f = 1.8 GHz 1G 1/2 ma = |S21e / S12e| (k-(k²-1) ), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 3 Jun-15-2004