DISCRETE SEMICONDUCTORS DATA SHEET BLF246 VHF power MOS transistor Product specification Supersedes data of September 1992 1996 Oct 21 Philips Semiconductors Product specification VHF power MOS transistor BLF246 FEATURES PINNING - SOT121 • High power gain PIN SYMBOL • Low noise figure 1 d drain • Easy power control 2 s source • Good thermal stability 3 g gate • Withstands full load mismatch. 4 s source DESCRIPTION APPLICATIONS • Large signal amplifier applications in the VHF frequency range. handbook, halfpage 1 4 DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121 flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the General section of Data Handbook SC19a for further information. d g 2 3 s MAM267 CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION CW, class-B f (MHz) VDS (V) PL (W) Gp (dB) ηD (%) 108 28 80 ≥16 ≥55 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1996 Oct 21 2 Philips Semiconductors Product specification VHF power MOS transistor BLF246 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 65 V VGS gate-source voltage − ±20 V ID DC drain current − 13 A Ptot total power dissipation − 130 W Tstg storage temperature up to Tamb = 25 °C −65 150 °C Tj junction temperature − 200 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-mb thermal resistance from junction to mounting base 1.35 K/W Rth mb-h thermal resistance from mounting base to heatsink 0.2 K/W MRA931 50 MGG104 200 handbook, halfpage handbook, halfpage Ptot ID (A) (W) 150 10 (1) (2) (2) 100 (1) 1 50 10−1 1 10 VDS (V) 0 102 0 (1) Current is this area may be limited by RDS(on). (2) Tmb = 25 °C. 100 Th (°C) (1) Continuous operation. (2) Short-time operation during mismatch. Fig.2 DC SOAR. 1996 Oct 21 50 Fig.3 Power derating curves. 3 150 Philips Semiconductors Product specification VHF power MOS transistor BLF246 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 50 mA 65 − − V IDSS drain-source leakage current VGS = 0; VDS = 28 V − − 2.5 mA IGSS gate-source leakage current VGS = ±20 V; VDS = 0 − − 1 µA VGSth gate-source threshold voltage ID = 50 mA; VDS = 10 V 2 − 4.5 V ∆VGS gate-source voltage difference of matched pairs ID = 50 mA; VDS = 10 V − − 100 mV gfs forward transconductance ID = 2.5 A or 5 A; VDS = 10 V 3 4.2 − S RDSon drain-source on-state resistance ID = 5 A; VGS = 10 V − 0.2 0.3 Ω IDSX on-state drain current VGS = 10 V; VDS = 10 V − 22 − A Cis input capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 225 − pF Cos output capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 180 − pF Crs feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 25 − pF MGG105 2 handbook, halfpage ID (A) T.C. (mV/K) 0 30 −2 20 −4 10 −6 10−2 10−1 1 ID (A) 0 10 0 10 15 20 VDS = 10 V; Tj = 25 °C. Temperature coefficient of gate-source voltage as a function of drain current, typical values. 1996 Oct 21 5 VGS (V) VDS = 10 V; valid for Th = 25 to 70 °C. Fig.4 MGG106 40 handbook, halfpage Fig.5 4 Drain current as a function of gate-source voltage, typical values. Philips Semiconductors Product specification VHF power MOS transistor BLF246 MBD297 400 MRA930 800 handbook, halfpage RDSon C (pF) (Ω) 300 600 200 400 100 200 C os C is 0 0 0 50 100 o T j ( C) 0 150 10 20 30 40 VDS (V) VGS = 10 V; ID = 5 A. VGS = 0; f = 1 MHz. Fig.6 Drain-source on-state resistance as a function of junction temperature, typical values. Fig.7 MGG108 300 handbook, halfpage Crs (pF) 200 100 0 0 10 20 30 40 VDS (V) VGS = 0; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage, typical values. 1996 Oct 21 5 Input and output capacitance as functions of drain-source voltage, typical values. Philips Semiconductors Product specification VHF power MOS transistor BLF246 APPLICATION INFORMATION RF performance in CW operation in a common source test circuit. Th = 25 °C; Rth mb-h = 0.2 K/W; RGS = 12 Ω unless otherwise specified. MODE OF OPERATION f (MHz) VDS (V) ID (A) PL (W) Gp (dB) ηD (%) CW, class-B 108 28 0.1 80 >16 >55 CW, class-B 108 28 0.1 80 typ. 18 typ. 65 CW, class-C 108 28 0(1) 80 typ. 15 typ. 72 Note 1. VGS = 0 (class-C). Ruggedness in class-B operation The BLF246 is capable of withstanding a load mismatch corresponding to VSWR = 50: 1 through all phases under the following conditions: VDS = 28 V; f = 108 MHz; Th = 25 °C; Rth mb-h = 0.2 K/W at rated output power. Noise figure Measured with 80 W power-matched source and load in the test circuit (see Fig.9) with VDS = 28 V; ID = 2 A; f = 108 MHz; RGS = 27 Ω; Th = 25 °C; Rth mb-h = 0.2 K/W; F = typ. 3 dB. MGG095 MGG096 20 150 100 handbook, halfpage handbook, halfpage Gp Gp ηD (dB) PL (W) ηD (%) 100 10 50 50 0 0 50 100 PL (W) 50 0 150 0 1 2 3 4 PIN (W) 5 Class-B operation; VDS = 28 V; IDQ = 0.1 A; RGS = 12 Ω; f = 108 MHz; Th = 25 °C; Rth mb-h = 0.2 K/W. Class-B operation; VDS = 28 V; IDQ = 0.1 A; RGS = 12 Ω; f = 108 MHz; Th = 25 °C; Rth mb-h = 0.2 K/W. Fig.9 Fig.10 Load power as a function of input power, typical values. Power gain and efficiency as functions of load power, typical values. 1996 Oct 21 6 Philips Semiconductors Product specification VHF power MOS transistor BLF246 handbook, full pagewidth C12 C10 input 50Ω C1 L1 DUT C11 L2 L4 L6 output 50Ω L3 C7 C6 C2 C3 L5 R1 R3 C4 VDS L7 R2 C5 VG C8 C9 MGG097 Fig.11 Test circuit for class-B operation at 108 MHz. 1996 Oct 21 C13 C14 L8 7 Philips Semiconductors Product specification VHF power MOS transistor BLF246 List of components (see Figs 11 and 12). COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C4, C5, C8, C14 multilayer ceramic chip capacitor 100 nF 2222 852 47104 C2, C3, C6, C7 film dielectric trimmer 5 to 60 pF 2222 809 08003 C9 electrolytic capacitor 2.2 µF, 63 V 2222 030 38228 C10 multilayer ceramic chip capacitor; note 1 68 pF + 39 pF in parallel C11 multilayer ceramic chip capacitor; note 1 69 pF + 100 pF in parallel C12 multilayer ceramic chip capacitor; note 1 2x 100 pF in parallel C13 multilayer ceramic chip capacitor; note 1 62 pF L1 5 turns enamelled 0.6 mm copper wire 52 nH length 6.5 mm int. dia. 3 mm leads 2 × 10 mm L2 2 turns enamelled 0.6 mm copper wire 19 nH length 3.5 mm int. dia. 3 mm leads 2 × 7.5 mm L3, L4 stripline; note 2 31 Ω length 13 mm width 6 mm L5 3 turns enamelled 1.6 mm copper wire 36 nH length 12 mm int. dia. 6 mm leads 2 × 5 mm L6 hairpin of enamelled 1.6 mm copper wire 14 nH length 20 mm L7 grade 3B Ferroxcube HF choke L8 3 turns enamelled 1.6 mm copper wire 52 nH R1 metal film resistor 2 × 24 Ω in parallel, 0.4 W R2 metal film resistor 100 kΩ, 0.4 W R3 metal film resistor 10 Ω, 0.4 W 4312 020 36640 length 8 mm int. dia. 6 mm leads 2 × 9 mm Notes 1. American Technical Ceramics capacitor, type 100B or other capacitor of the same quality. 2. The striplines are mounted on a double copper-clad PCB with epoxy fibre-glass dielectric (εr = 4.5), thickness 1.6 mm. 1996 Oct 21 8 Philips Semiconductors Product specification VHF power MOS transistor BLF246 150 handbook, full pagewidth STRAP RIVET 70 STRAP L7 +VDS R3 C9 C5 R2 + VG C8 C4 L5 C1 C10 L1 R1 C11 L2 C2 C12 L8 L6 L3 C13 C14 L4 C3 C6 C7 MGG098 Dimensions in mm. The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as a ground. Earth connections are made by means of hollow rivets, whilst under the source leads, copper straps are used for a direct contact between the upper and lower sheets. Fig.12 Component layout for 108 MHz class-B test circuit. 1996 Oct 21 9 Philips Semiconductors Product specification VHF power MOS transistor BLF246 MGG093 5 MGG094 6 handbook, halfpage handbook, halfpage Zi (Ω) ZL (Ω) ri 0 4 RL xi −5 2 XL −10 −15 0 0 50 100 150 0 200 50 100 150 200 f (MHz) f (MHz) Class-B operation; VDS = 28 V; IDQ = 0.1 A; RGS = 12 Ω; PL = 80 W; Th = 25 °C; Rth mb-h = 0.2 K/W. Class-B operation; VDS = 28 V; IDQ = 0.1 A; RGS = 12 Ω; PL = 80 W; Th = 25 °C; Rth mb-h = 0.2 K/W. Fig.13 Input impedance as a function of frequency (series components), typical values. Fig.14 Load impedance as a function of frequency (series components), typical values. MGG092 40 handbook, halfpage Gp (dB) 30 20 10 0 0 50 100 150 200 f (MHz) Class-B operation; VDS = 28 V; IDQ = 0.1 A; RGS = 12 Ω; PL = 80 W; Th = 25 °C; Rth mb-h = 0.2 K/W. Fig.15 Power gain as a function of frequency, typical values. 1996 Oct 21 10 Philips Semiconductors Product specification VHF power MOS transistor BLF246 PACKAGE OUTLINE handbook, full pagewidth 6.35 0.14 5.9 5.5 29 26 ceramic 1 4 25.2 max 18.42 13 max 6.5 min BeO 29 26 3 2 metal 3.35 (2x) 3.04 12.2 max 2.54 4.50 4.05 7.5 max MBC873 Dimensions in mm. Fig.16 SOT121. 1996 Oct 21 11 Philips Semiconductors Product specification VHF power MOS transistor BLF246 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Oct 21 12