DISCRETE SEMICONDUCTORS DATA SHEET BLF522 UHF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES BLF522 PIN CONFIGURATION • High power gain • Easy power control • Gold metallization halfpage • Good thermal stability • Withstands full load mismatch 1 2 • Designed for broadband operation. 3 4 5 6 d g MBB072 s DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 6-lead, SOT171 flange envelope, with a ceramic cap. All leads are isolated from the flange. Top view MBA931 - 1 Fig.1 Simplified outline and symbol. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. PINNING - SOT171 PIN WARNING DESCRIPTION 1 source Product and environmental safety - toxic materials 2 source 3 gate 4 drain 5 source 6 source This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source class-B circuit. MODE OF OPERATION CW, class-B September 1992 f (MHz) VDS (V) PL (W) GP (dB) ηD (%) 500 12.5 5 > 10 > 50 2 Philips Semiconductors Product specification UHF power MOS transistor BLF522 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 40 V ±VGS gate-source voltage − 20 V ID DC drain current − 1.8 A Ptot total power dissipation − 20 W Tstg storage temperature −65 150 °C Ti junction temperature − 200 °C up to Tmb = 25 °C THERMAL RESISTANCE SYMBOL PARAMETER THERMAL RESISTANCE CONDITIONS Rth j-mb thermal resistance from junction to mounting base Tmb = 25 °C; Ptot = 20 W 8.8 K/W Rth mb-h thermal resistance from mounting base to heatsink Tmb = 25 °C; Ptot = 20 W 0.4 K/W MRA990 5 MRA427 35 handbook, P halfpage handbook, halfpage tot (W) ID (A) 30 25 (1) (2) (2) 1 20 (1) 15 10 5 0.1 1 10 VDS (V) 0 0 100 (1) Current in this area may be limited by RDS(on). (2) Tmb = 25 °C. 40 60 80 100 120 Th (oC) (1) Continuous operation. (2) Short-time operation during mismatch. Fig.2 DC SOAR. September 1992 20 Fig.3 Power/temperature derating curves. 3 Philips Semiconductors Product specification UHF power MOS transistor BLF522 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS V(BR)DSS drain-source breakdown voltage MIN. TYP. MAX. UNIT VGS = 0; ID = 5 mA 40 − − V IDSS drain-source leakage current VGS = 0; VDS = 12.5 V − − 0.5 mA IGSS gate-source leakage current ±VGS = 20 V; VDS = 0 − − 1 µA VGS(th) gate-source threshold voltage ID = 50 mA; VDS = 10 V 2 − 4.5 V gfs forward transconductance ID = 0.7 A; VDS = 10 V 200 270 − mS RDS(on) drain-source on-state resistance ID = 0.7 A; VGS = 15 V − 1.8 2.7 Ω IDSX on-state drain current VGS = 15 V; VDS = 10 V − 2.3 − A Cis input capacitance VGS = 0; VDS = 12.5 V; f = 1 MHz − 14 − pF Cos output capacitance VGS = 0; VDS = 12.5 V; f = 1 MHz − 17 − pF Crs feedback capacitance VGS = 0; VDS = 12.5 V; f = 1 MHz − 3 − pF MRA254 25 T.C. (mV/K) ID (A) 15 2 5 1 0 −5 10 MRA249 3 handbook, halfpage handbook, halfpage 102 103 104 0 4 ID(mA) VDS = 10 V. VDS = 10 V; Tj = 25 °C. Fig.4 Fig.5 Temperature coefficient of gate-source voltage as a function of drain current, typical values. September 1992 4 8 12 16 20 VGS (V) Drain current as a function of gate-source voltage, typical values. Philips Semiconductors Product specification UHF power MOS transistor BLF522 MRA253 5 MRA246 50 handbook, halfpage handbook, halfpage RDSon (Ω) C (pF) 4 40 3 30 2 20 1 10 0 0 50 100 Tj (oC) 0 150 Cos Cis 0 4 VGS = 0; f = 1 MHz. Fig.6 Fig.7 Drain-source on-state resistance as a function of junction temperature, typical values. MRA256 handbook, halfpage Crs (pF) 8 6 4 2 0 0 4 8 12 VDS (V) 16 VGS = 0; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage, typical values. September 1992 12 16 VDS (V) ID = 0.7 A; VGS = 15 V; 10 8 5 Input and output capacitance as functions of drain-source voltage, typical values. Philips Semiconductors Product specification UHF power MOS transistor BLF522 APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 °C; Rth mb-h = 0.4 K/W, unless otherwise specified. RF performance in a common source class-B circuit. MODE OF OPERATION f (MHz) VDS (V) IDQ (mA) PL (W) Gp (dB) ηD (%) 500 12.5 50 5 > 10 typ. 11 > 50 typ. 55 CW, class-B Ruggedness in class-B operation The BLF522 is capable of withstanding a full load mismatch corresponding to VSWR = 50:1 through all phases under the following conditions: VDS = 15.5 V; f = 500 MHz at rated output power. MRA247 20 GP (dB) handbook, halfpage handbook, halfpage η PL (W) (%) 80 8 60 6 8 40 4 4 20 2 0 0 16 η 12 MRA252 10 100 GP 0 3 4 5 6 PL (W) 7 0 0.4 0.8 1.2 PIN (W) 1.6 Class-B operation; VDS = 12.5 V; IDQ = 50 mA; f = 500 MHz. Class-B operation; VDS = 12.5 V; IDQ = 50 mA; f = 500 MHz. Fig.9 Fig.10 Load power as a function of input power, typical values. Power gain and efficiency as functions of load power, typical values. September 1992 6 Philips Semiconductors Product specification UHF power MOS transistor BLF522 handbook, full pagewidth C15 L5 C2 50 Ω input C1 L1 C4 C6 L2 L3 L8 L9 C5 L10 C20 DUT L4 C16 L6 C3 C17 C18 C19 C12 C7 R1 C10 R5 L7 C8 C13 R2 C9 C14 C11 +VDS R3 R4 f = 500 MHz. Fig.11 Test circuit for class-B operation. September 1992 7 MGA070 50 Ω output Philips Semiconductors Product specification UHF power MOS transistor BLF522 List of components (class-B test circuit) COMPONENT DESCRIPTION VALUE C1, C8, C20 multilayer ceramic chip capacitor (note 1) 430 pF, 50 V C2 multilayer ceramic chip capacitor (note 2) 3.9 pF, 50 V C3, C5, C18, C19 film dielectric trimmer 2 to 18 pF C4 multilayer ceramic chip capacitor (note 2) 20 pF, 50 V C6, C7, C15, C16, C17 multilayer ceramic chip capacitor (note 2) 10 pF, 50 V DIMENSIONS CATALOGUE NO. 2222 809 09003 C9, C10, C11, C13 multilayer ceramic chip capacitor 100 nF, 50 V C12 multilayer ceramic chip capacitor (note 1) 390 pF, 50 V 2222 852 47104 C14 electrolytic capacitor 10 µF, 63 V L1 stripline (note 3) 50 Ω 36.6 × 2.5 mm L2 stripline (note 3) 50 Ω 16.7 × 2.5 mm L3 stripline (note 3) 50 Ω 7.7 × 2.5 mm L4, L5 stripline (note 3) 42 Ω 3 × 3 mm L6 4 turns enamelled 0.8 mm copper wire 24.9 nH length 6.9 mm int. dia. 2.5 mm leads 2 × 5 mm L7 grade 3B Ferroxcube RF choke L8 stripline (note 3) 50 Ω 10 × 2.5 mm L9 stripline (note 3) 50 Ω 16.5 × 2.5 mm L10 stripline (note 3) 50 Ω 34.5 × 2.5 mm R1 0.4 W metal film resistor 10 kΩ 2322 151 51003 R2 0.4 W metal film resistor 1 kΩ 2322 151 51002 R3 10 turns cermet potentiometer 50 kΩ R4 0.4 W metal film resistor 47 kΩ 2322 151 54703 R5 1 W metal film resistor 10 Ω 2322 153 51009 2222 030 38109 4312 020 36642 Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality. 3. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 2.2); thickness 0.79 mm. September 1992 8 Philips Semiconductors Product specification UHF power MOS transistor BLF522 +VDS R3 andbook, full pagewidth C11 C9 C14 R2 R5 C8 C4 C1 C2 L1 C3 L7 C10 R1 C6 L2 L3 L4 C7 C13 C12 L6 L5 L8 C15 C16 C20 L10 L9 C18 C5 C19 MBC218 150 mm handbook, full pagewidth strap strap strap strap 70 mm strap rivets (12x) strap strap strap MBC217 The circuit and components are situated on one side of the printed circuit board, the other side being fully metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets. Fig.12 Component layout for 500 MHz class-B test circuit. September 1992 9 Philips Semiconductors Product specification UHF power MOS transistor BLF522 MRA250 10 handbook, halfpage Zi 0 (Ω) MRA251 20 handbook, halfpage ri ZL (Ω) 15 −20 xi RL −40 10 −60 5 XL −80 100 200 300 400 f (MHz) 0 100 500 200 300 400 500 f (MHz) Class-B operation; VDS = 12.5 V; IDQ = 50 mA; PL = 5 W. Class-B operation; VDS = 12.5 V; IDQ = 50 mA; PL = 5 W. Fig.13 Input impedance as a function of frequency (series components), typical values. Fig.14 Load impedance as a function of frequency (series components), typical values. MRA248 30 GP (dB) 25 handbook, halfpage 20 15 handbook, halfpage 10 Zi ZL 5 MBA379 0 100 200 300 400 f (MHz) 500 Class-B operation; VDS = 12.5 V; IDQ = 50 mA; PL = 5 W. Fig.15 Definition of MOS impedance. September 1992 Fig.16 Power gain as a function of frequency, typical values. 10 Philips Semiconductors Product specification UHF power MOS transistor BLF522 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads SOT171A D A F D1 U1 B q C w2 M C H1 c b1 2 H 4 6 E1 U2 1 A 3 5 E w1 M A B p Q w3 M b e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b b1 c D D1 E E1 e mm 6.81 6.07 2.15 1.85 3.20 2.89 0.16 0.07 9.25 9.04 9.30 8.99 5.95 5.74 6.00 5.70 3.58 inches w1 w2 w3 0.51 1.02 0.26 0.268 0.085 0.126 0.006 0.364 0.366 0.234 0.236 0.120 0.445 0.365 0.135 0.170 0.980 0.236 0.725 0.02 0.140 0.239 0.073 0.114 0.003 0.356 0.354 0.226 0.224 0.100 0.415 0.355 0.125 0.162 0.970 0.224 0.04 0.01 OUTLINE VERSION F JEDEC EIAJ SOT171A September 1992 H1 3.05 11.31 9.27 2.54 10.54 9.01 REFERENCES IEC H p 3.43 3.17 Q q U1 U2 4.32 24.90 6.00 18.42 4.11 24.63 5.70 EUROPEAN PROJECTION ISSUE DATE 97-06-28 11 Philips Semiconductors Product specification UHF power MOS transistor BLF522 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1992 12