PHILIPS BLF245

DISCRETE SEMICONDUCTORS
DATA SHEET
BLF245
VHF power MOS transistor
Product specification
September 1992
Philips Semiconductors
Product specification
VHF power MOS transistor
FEATURES
BLF245
PIN CONFIGURATION
• High power gain
• Low noise figure
• Easy power control
lfpage
1
4
• Good thermal stability
d
• Withstands full load mismatch.
g
MBB072
s
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for large signal amplifier
applications in the VHF frequency
range.
The transistor is encapsulated in a
4-lead SOT123 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
Matched gate-source voltage (VGS)
groups are available on request.
2
3
MSB057
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
PINNING - SOT123
PIN
DESCRIPTION
1
drain
2
source
3
gate
4
source
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a class-B test circuit.
MODE OF OPERATION
CW, class-B
September 1992
f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
175
28
30
> 13
> 50
2
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF245
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
VGS = 0
−
65
V
±VGS
gate-source voltage
VDS = 0
−
20
V
ID
DC drain current
−
6
A
Ptot
total power dissipation
−
68
W
Tstg
storage temperature
−65
150
°C
Tj
junction temperature
−
200
°C
up to Tmb = 25 °C
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
Rth j-mb
thermal resistance from
junction to mounting base
Tmb = 25 °C; Ptot = 68 W
2.6 K/W
Rth mb-h
thermal resistance from
mounting base to heatsink
Tmb = 25 °C; Ptot = 68 W
0.3 K/W
MRA921
10
MGP167
100
handbook, halfpage
handbook, halfpage
Ptot
ID
(A)
(W)
(1)
80
(2)
(2)
60
1
(1)
40
20
10−1
1
10
VDS (V)
0
102
0
(1) Current is this area may be limited by RDS(on).
(2) Tmb = 25 °C.
80
120
Th (°C)
160
(1) Continuous operation.
(2) Short-time operation during mismatch.
Fig.2 DC SOAR.
September 1992
40
Fig.3 Power/temperature derating curves.
3
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF245
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VGS = 0; ID = 10 mA
MIN.
TYP.
MAX. UNIT
65
−
−
V(BR)DSS
drain-source breakdown voltage
V
IDSS
drain-source leakage current
VGS = 0; VDS = 28 V
−
−
2
mA
IGSS
gate-source leakage current
±VGS = 20 V; VDS = 0
−
−
1
µA
VGS(th)
gate-source threshold voltage
ID = 10 mA; VDS = 10 V
2
−
4.5
V
∆VGS
gate-source voltage difference of
matched devices
ID = 10 mA; VDS = 10 V
−
−
100
mV
gfs
forward transconductance
ID = 1.5 A; VDS = 10 V
1.2
1.9
−
S
RDS(on)
drain-source on-state resistance
ID = 1.5 A; VGS = 10 V
−
0.4
0.75
Ω
IDSX
on-state drain current
VGS = 10 V; VDS = 10 V
−
10
−
A
Cis
input capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
−
125
−
pF
Cos
output capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
−
75
−
pF
Crs
feedback capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
−
7
−
pF
F
noise figure (see Fig.14)
input and output power matched for: −
ID = 1 A; VDS = 28 V; PL = 30 W;
R1 = 1 kΩ; Th = 25 °C; f = 175 MHz
2
−
dB
MGP168
6
T.C.
(mV/K)
4
MGP169
12
handbook, halfpage
handbook, halfpage
Tj = 25 °C
ID
(A)
125 °C
8
2
0
−2
4
−4
−6
10
102
103
ID (mA)
0
104
0
VDS = 10 V; valid for Tj = 25 to 125 °C.
Fig.4
VGS (V)
20
VDS = 10 V.
Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
September 1992
10
Fig.5
4
Drain current as a function of gate-source
voltage, typical values.
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF245
MGP170
0.8
MGP171
240
handbook, halfpage
handbook, halfpage
C
(pF)
RDS(on)
(Ω)
200
0.6
160
0.4
Cis
120
0.2
Cos
80
0
40
0
40
120
80
Tj (°C)
0
160
10
VGS = 10 V;
ID = 1.5 A.
VGS = 0; f = 1 MHz.
Fig.6
Fig.7
Drain-source on-state resistance as a
function of junction temperature, typical
values.
MRA920
20
handbook, halfpage
Crs
(pF)
10
0
0
10
20
VDS (V)
30
VGS = 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of
drain-source voltage, typical values.
September 1992
5
20
30
VDS (V)
40
Input and output capacitance as functions
of drain-source voltage, typical values.
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF245
APPLICATION INFORMATION FOR CLASS-B OPERATION
Th = 25 °C; Rth mb-h = 0.3 K/W; R1 = 1 kΩ.
RF performance in CW operation in a common source class-B test circuit.
MODE OF OPERATION
CW, class-B
Zi
(Ω)
(note 1)
f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
GP
(dB)
ηD
(%)
175
28
50
30
> 13
typ. 15.5
< 50
typ. 67
2.0 − j2.7
3.9 + j4.4
175
12.5
50
12
typ. 12
typ. 66
2.4 − j2.5
3.8 + j1.3
ZL
(Ω)
Note
1. R1 included.
Ruggedness in class-B operation
The BLF245 is capable of withstanding a load mismatch
corresponding to VSWR = 50 through all phases under
the following conditions:
Th = 25 °C; Rth mb-h = 0.3 K/W; at rated load power.
MGP172
20
handbook, halfpage
Gp
(dB)
100
ηD
(%)
Gp
MEA736
60
PL
(W)
handbook, halfpage
50
ηD
40
10
50
30
20
0
0
10
20
30
40
PL (W)
10
50
0
0.6
1.2
1.8
2.4
PIN (W)
Class-B operation; VDS = 28 V; IDQ = 50 mA;
f = 175 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W.
Class-B operation; VDS = 28 V; IDQ = 50 mA;
f = 175 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W.
Fig.9
Fig.10 Load power as a function of input power,
typical values.
Power gain and efficiency as functions of
load power, typical values.
September 1992
6
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF245
MGP173
20
handbook, halfpage
handbook, halfpage
ηD
(%)
Gp
(dB)
MEA737
20
100
PL
(W)
ηD
Gp
10
0
0
10
50
10
0
0
0
20
PL (W)
0.6
1.2
2.4
1.8
PIN (W)
Class-B operation; VDS = 12.5 V; IDQ = 50 mA;
f = 175 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W.
Class-B operation; VDS = 12.5 V; IDQ = 50 mA;
f = 175 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W.
Fig.11 Power gain and efficiency as functions of
load power, typical values.
Fig.12 Load power as a function of input power,
typical values.
C7
handbook, full pagewidth
C9
Zi
50 Ω
input
C1
L3
D.U.T.
L6
L2
L1
C8
C10
C2
L4
R1
C3
C5
C6
R2
R3
C4
L5
+VGG
+VDD
MGP174
f = 175 MHz.
Fig.13 Test circuit for class-B operation.
September 1992
50 Ω
output
7
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF245
List of components (class-B test circuit)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
C1
film dielectric trimmer
4 to 40 pF
2222 809 07008
C2, C8
film dielectric trimmer
5 to 60 pF
2222 809 07011
C3
multilayer ceramic chip capacitor
100 pF
2222 854 13101
C4, C6
multilayer ceramic chip capacitor
100 nF
2222 852 47104
C5
ceramic capacitor
100 pF
2222 680 10101
C7
multilayer ceramic chip capacitor
(note 1)
18 pF
C9
multilayer ceramic chip capacitor
(note 1)
27 pF
C10
multilayer ceramic chip capacitor
(note 1)
24 pF
L1
3 turns enamelled 0.5 mm copper
wire
13.5 nH
length 3.5 mm
int. dia. 2 mm
leads 2 × 2 mm
L2, L3
stripline (note 2)
30 Ω
10 × 6 mm
L4
6 turns enamelled 1.5 mm copper
wire
98 nH
length 12.5 mm
int. dia. 5 mm
leads 2 × 2 mm
L5
grade 3B Ferroxcube RF choke
L6
2 turns enamelled 1.5 mm copper
wire
24.5 nH
length 4 mm
int. dia. 5 mm
leads 2 × 2 mm
R1
metal film resistor
1 kΩ
R2
metal film resistor
1 MΩ
R3
metal film resistor
10 Ω
4312 020 36640
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are mounted on a double copper-clad PCB with epoxy fibre-glass dielectric (εr = 4.5),
thickness 1⁄16 inch.
September 1992
8
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF245
135
handbook, full pagewidth
copper straps
rivets
72
copper strap
copper straps
+VGG
C3
L5
C4
R2
C6
R3
L4
C1
C2
+VDD
C5
R1
L1
C8
L2
L3
L6
C7
C9
C10
MGP175
The circuit and components are situated on one side of the epoxy fiber-glass board; the other side is unetched
copper and serves as an earth. Earth connections are made by means of fixing screws, hollow rivets and copper
straps under the sources and around the edges, to provide a direct contact between the copper on the
component side and the ground plane.
Dimensions in mm.
Fig.14 Component layout for 175 MHz class-B test circuit.
September 1992
9
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF245
MGP177
40
MGP178
16
handbook, halfpage
handbook, halfpage
Zi
(Ω)
ZL
(Ω)
30
12
RL
20
8
−xi
10
XL
4
ri
0
0
20
40
60
80
100
120
f (MHz)
20
40
60
80
100
120
f (MHz)
Class-B operation; VDS = 28 V; IDQ = 50 mA;
PL = 30 W; Th = 25 °C; Rth mb-h = 0.3 K/W.
Class-B operation; VDS = 28 V; IDQ = 50 mA;
PL = 30 W; Th = 25 °C; Rth mb-h = 0.3 K/W.
Fig.15 Input impedance as a function of frequency
(series components), typical values.
Fig.16 Load impedance as a function of frequency
(series components), typical values.
MGP179
40
handbook, halfpage
Gp
(dB)
30
20
handbook, halfpage
10
Zi
ZL
MBA379
0
20
40
60
80
100
120
f (MHz)
Class-B operation; VDS = 28 V; IDQ = 50 mA;
PL = 30 W; Th = 25 °C; Rth mb-h = 0.3 K/W.
Fig.17 Definition of MOS impedance.
September 1992
Fig.18 Power gain as a function of frequency,
typical values.
10
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF245
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 4 leads
SOT123A
D
A
F
q
C
B
U1
w2 M C
c
H
b
L
4
3
α
A
p
U3
U2
w1 M A B
1
2
H
Q
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D1
F
H
L
p
Q
q
U1
U2
U3
w1
w2
mm
7.47
6.37
5.82
5.56
0.18
0.10
9.73
9.47
9.63
9.42
2.72
2.31
20.71
19.93
5.61
5.16
3.33
3.04
4.63
4.11
18.42
25.15
24.38
6.61
6.09
9.78
9.39
0.51
1.02
inches
0.294
0.251
0.229 0.007
0.219 0.004
0.182
0.725
0.162
0.99
0.96
0.26
0.24
0.385
0.370
0.02
0.04
OUTLINE
VERSION
0.383 0.397 0.107 0.815
0.373 0.371 0.091 0.785
0.221 0.131
0.203 0.120
REFERENCES
IEC
JEDEC
EIAJ
SOT123A
September 1992
α
45°
EUROPEAN
PROJECTION
ISSUE DATE
97-06-28
11
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF245
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1992
12