PHILIPS BLF145

DISCRETE SEMICONDUCTORS
DATA SHEET
BLF145
HF power MOS transistor
Product specification
September 1992
Philips Semiconductors
Product specification
HF power MOS transistor
FEATURES
BLF145
PIN CONFIGURATION
• High power gain
• Low noise figure
k, halfpage
• Good thermal stability
1
4
• Withstands full load mismatch.
d
DESCRIPTION
g
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for SSB transmitter
applications in the HF frequency
range. The transistor is encapsulated
in a 4-lead, SOT123 flange envelope,
with a ceramic cap. All leads are
isolated from the flange. Matched
gate-source voltage (VGS) groups are
available on request.
MBB072
2
s
3
MSB057
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
PINNING - SOT123
PIN
DESCRIPTION
1
drain
2
source
3
gate
4
source
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
f
(MHz)
VDS
(V)
ID
(A)
PL
(W)
Gp
(dB)
ηD
(%)
(note 1)
d3
(dB)
SSB, class-A
28
28
1.3
8 (PEP)
> 24
−
< −40
SSB, class-AB
28
28
−
30 (PEP)
typ. 20
typ. 40
typ. −35
MODE OF OPERATION
Note
1. 2-tone efficiency.
September 1992
2
Philips Semiconductors
Product specification
HF power MOS transistor
BLF145
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDSS
drain-source voltage
−
65
V
±VGSS
gate-source voltage
−
20
V
ID
DC drain current
−
6
A
Ptot
total power dissipation
−
68
W
Tstg
storage temperature
−65
150
°C
Tj
junction temperature
−
200
°C
up to Tmb = 25 °C
THERMAL RESISTANCE
SYMBOL
PARAMETER
THERMAL RESISTANCE
Rth j-mb
thermal resistance from junction to mounting base
2.6 K/W
Rth mb-h
thermal resistance from mounting base to heatsink
0.3 K/W
MRA901
10
MGP035
100
handbook, halfpage
handbook, halfpage
Ptot
ID
(A)
(W)
(1)
(2)
80
(1)
1
60
(2)
40
10−1
1
10
VDS (V)
20
102
0
80
120
Th (°C)
160
(1) Short-time operation during mismatch.
(2) Continuous operation.
(1) Current is this area may be limited by RDS(on).
(2) Tmb = 25 °C.
Fig.2 DC SOAR.
September 1992
40
Fig.3 Power/temperature derating curves.
3
Philips Semiconductors
Product specification
HF power MOS transistor
BLF145
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS
drain-source breakdown voltage
MIN.
TYP.
MAX. UNIT
ID = 10 mA; VGS = 0
65
−
−
V
IDSS
drain-source leakage current
VGS = 0; VDS = 28 V
−
−
2
mA
IGSS
gate-source leakage current
±VGS = 20 V; VDS = 0
−
−
1
µA
VGS(th)
gate-source threshold voltage
ID = 10 mA; VDS = 10 V
2
−
4.5
V
∆VGS
gate-source voltage difference of
matched devices
ID = 10 mA; VDS = 10 V
−
−
100
mV
gfs
forward transconductance
ID = 1.5 A; VDS = 10 V
1.2
−
−
S
RDS(on)
drain-source on-state resistance
ID = 1.5 A; VGS = 10 V
−
0.4
0.75
Ω
IDSX
on-state drain current
VGS = 10 V; VDS = 10 V
−
10
−
A
Cis
input capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
−
125
−
pF
Cos
output capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
−
75
−
pF
Crs
feedback capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
−
7
−
pF
MGP036
4
MGP037
12
handbook, halfpage
handbook, halfpage
T.C.
(mV/K)
Tj = 25 °C
ID
(A)
2
125 °C
8
0
−2
4
−4
−6
10
102
103
ID (mA)
0
104
0
5
VDS = 10 V.
VDS = 10 V.
Fig.4
Fig.5
Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
September 1992
4
10
15
VGS (V)
20
Drain current as a function of gate-source
voltage, typical values.
Philips Semiconductors
Product specification
HF power MOS transistor
BLF145
MGP038
0.8
MGP039
240
handbook, halfpage
handbook, halfpage
C
(pF)
RDS(on)
(Ω)
0.6
180
0.4
120
Cis
Cos
0.2
60
0
0
0
40
80
120
0
160
10
ID = 1.5 A;
VGS = 10 V.
Fig.6
Fig.7
MRA900
20
handbook, halfpage
Crs
(pF)
10
0
10
20
VDS (V)
30
VGS = 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of
drain-source voltage, typical values.
September 1992
30
40
VGS = 0; f = 1 MHz.
Drain-source on-state resistance as a
function of junction temperature, typical
values.
0
20
VDS (V)
Tj (°C)
5
Input and output capacitance as functions
of drain-source voltage, typical values.
Philips Semiconductors
Product specification
HF power MOS transistor
BLF145
APPLICATION INFORMATION FOR CLASS-A OPERATION
Th = 25 °C; Rth mb-h = 0.3 K/W; R1 = 26 Ω; unless otherwise specified.
RF performance in SSB operation in a common source class-A circuit.
MODE OF
OPERATION
f
VDS
(MHz) (V)
SSB, class-A
28
28
ID
(A)
PL
(W)
GP
(dB)
d3
(dB)
(note 1)
d5
(dB)
(note 1)
1.3
8 (PEP)
> 24
typ. 27
> −40
typ. −43
< −40
typ. −70
ZL
(Ω)
18.4 + j5.2
Note
1. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are
referred to the according level of either the equal amplified tones. Related to the according peak envelope power
these figures should be decreased by 6 dB.
MGP040
30
MGP041
−20
handbook, halfpage
handbook, halfpage
d3
(dB)
Gp
(dB)
−30
28
−40
26
−50
−60
24
0
10
20
30
PL (W) PEP
0
10
20
PL (W) PEP
30
Class-A operation; VDS = 28 V; ID = 1.3 A;
Rth mb-h = 0.3 K/W; f = 28 MHz.
solid line: Th = 25 °C.
dotted line: Th = 70 °C.
Class-A operation; VDS = 28 V; ID = 1.3 A;
Rth mb-h = 0.3 K/W; f = 28 MHz.
solid line: Th = 25 °C.
dotted line: Th = 70 °C.
Fig.9
Fig.10 Third order intermodulation distortion as a
function of load power, typical values.
Power gain as a function of load power,
typical values.
September 1992
6
Philips Semiconductors
Product specification
HF power MOS transistor
BLF145
handbook, full pagewidth
C5
C1
C9
L5
output
50 Ω
L2
L1
input
50 Ω
L3
D.U.T.
C2
C10
C6
R1
C3
L4
C8
C4
C7
R2
+VD
+VG
C11
C12
L6
MGP042
f = 28 MHz.
Fig.11 Test circuit for class-A operation.
List of components (class-A test circuit)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
C1, C3, C8, C9
film dielectric trimmer
7 to 100 pF
C2, C10
multilayer ceramic chip capacitor
(note 1)
39 pF
2222 809 07015
C4, C7
multilayer ceramic chip capacitor
100 nF
C5, C6
multilayer ceramic chip capacitor
(note 1)
27 pF
C11
multilayer ceramic chip capacitor
3 × 100 nF
2222 852 47104
C12
electrolytic capacitor
2.2 µF, 63 V
2222 030 38228
L1
12 turns enamelled 0.5 mm copper
wire
307 nH
length 8 mm;
int. dia. 4 mm
L2, L3
stripline (note 2)
30 Ω
length 15 × 6 mm
L4
14 turns enamelled 1 mm copper
wire
1039 nH
length 14 mm;
int. dia. 9 mm
L5
9 turns enamelled 1 mm copper wire 305 nH
L6
grade 3B Ferroxcube wideband HF
choke
R1
0.25 W metal film resistor
26 Ω
R2
0.25 W metal film resistor
10 Ω
2222 852 47104
length 10 mm;
int. dia. 6 mm
4312 020 36640
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 4.5),
thickness 1⁄16 mm.
September 1992
7
Philips Semiconductors
Product specification
HF power MOS transistor
BLF145
APPLICATION INFORMATION FOR CLASS-B OPERATION
Th = 25 °C; Rth mb-h = 0.3 K/W; R1 = 34 Ω; unless otherwise specified.
RF performance in SSB operation in a common source class-AB circuit.
MODE OF
OPERATION
f
VDS
(MHz) (V)
SSB, class-AB
28
28
IDQ
(A)
PL
(W)
Gp
(dB)
ηD
(%)
d3
(dB)
(note 1)
d5
(dB)
(note 1)
ZL
(Ω)
0.25
30 (PEP)
typ. 20
typ. 40
typ. −35
typ. −40
8.9 + j1.0
Note
1. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are
referred to the according level of either the equal amplified tones. Related to the according peak envelope power
these figures should be decreased by 6 dB.
Ruggedness in class-AB operation
The BLF145 is capable of withstanding a load mismatch
corresponding to VSWR = 50 through all phases at
PL = 30 W single tone under the following conditions:
VDS = 28 V; f = 28 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W at
rated load power.
MGP043
22
MGP044
60
handbook, halfpage
handbook, halfpage
ηD
(%)
Gp
(dB)
20
40
18
20
16
0
20
40
PL (W)
0
60
0
20
40
PL (W)
60
Class-AB operation; VDS = 28 V; IDQ = 0.25 A;
Rth mb-h = 0.3 K/W; f = 28 MHz.
solid line: Th = 25 °C.
dotted line: Th = 70 °C.
Class-AB operation; VDS = 28 V; IDQ = 0.25 A;
Rth mb-h = 0.3 K/W; f = 28 MHz.
solid line: Th = 25 °C.
dotted line: Th = 70 °C.
Fig.12 Power gain as a function of load power,
typical values.
Fig.13 Two tone efficiency as a function of load
power, typical values.
September 1992
8
Philips Semiconductors
Product specification
HF power MOS transistor
BLF145
handbook, full pagewidth
C7
C9
C4
L3
D.U.T.
C1
C10
C5
C2
output
50 Ω
L2
L1
input
50 Ω
L5
R1
L4
C8
C3
C6
R2
+VD
+VG
C11
C12
L6
MGP045
f = 28 MHz.
Fig.14 Test circuit for class-AB operation.
List of components (class-AB test circuit)
COMPONENT
DESCRIPTION
C1, C2
film dielectric trimmer
C3, C6
C4, C5
VALUE
DIMENSIONS
CATALOGUE NO.
5 to 60 pF
2222 809 07011
multilayer ceramic chip capacitor
100 nF
2222 852 47104
multilayer ceramic chip capacitor
(note 1)
27 pF
C7, C10
multilayer ceramic chip capacitor
(note 1)
39 pF
C8, C9
film dielectric trimmer
7 to 100 pF
2222 809 07015
C11
multilayer ceramic chip capacitor
3 × 100 nF
2222 852 47104
C12
electrolytic capacitor
2.2 µF, 63 V
2222 030 38228
L1
13 turns enamelled 0.5 mm copper
wire
415 nH
length 10 mm;
int. dia. 5 mm
L2, L3
stripline (note 2)
30 Ω
length 15 × 6 mm
L4
10 turns enamelled 1 mm copper
wire
390 nH
length 13 mm;
int. dia. 7 mm
L5
9 turns enamelled 1 mm copper wire 245 nH
length 10 mm;
int. dia. 5 mm
L6
grade 3B Ferroxcube wideband HF
choke
R1
0.5 W metal film resistor
34 Ω
R2
0.25 W metal film resistor
10 Ω
4312 020 36640
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 4.5),
thickness 1⁄16 mm.
September 1992
9
Philips Semiconductors
Product specification
HF power MOS transistor
BLF145
MGP046
−20
MGP047
−20
handbook, halfpage
handbook, halfpage
d3
(dB)
d5
(dB)
−30
−30
−40
−40
−50
−50
0
20
40
PL (W)
60
0
20
40
PL (W)
60
Class-AB operation; VDS = 28 V; IDQ = 0.25 A;
Rth mb-h = 0.3 K/W; f = 28 MHz.
solid line: Th = 25 °C.
dotted line: Th = 70 °C.
Class-AB operation; VDS = 28 V; IDQ = 0.25 A;
Rth mb-h = 0.3 K/W; f = 28 MHz.
solid line: Th = 25 °C.
dotted line: Th = 70 °C.
Fig.15 Third order intermodulation distortion as a
function of load power, typical values.
Fig.16 Fifth order intermodulation distortion as a
function of load power, typical values.
Table 1
Input impedance as a function of frequency
Class-AB operation; VDS = 28 V; IDQ = 0.25 A;
PL = 30 W; Th = 25 °C;
Rth mb-h = 0.3 K/W; R1 = 34 Ω; ZL = 8.9 + j1 Ω.
MGP048
21
handbook, halfpage
Gp
(dB)
f
(MHz)
20
19
0
6
12
18
24
30
f (MHz)
Class-AB operation; VDS = 28 V; IDQ = 0.25 A;
PL = 30 W; Th = 25 °C; Rth mb-h = 0.3 K/W;
R1 = 34 Ω; ZL = 8.9 + j1 Ω.
Fig.17 Power gain as a function of frequency,
typical values.
September 1992
10
Zi
(Ω)
1.5
32.9 − j2.2
3.0
32.4 − j4.3
6.0
30.7 − j8.1
10
27.4 − j11.9
15
32.9 − j14.6
20
18.5 − j15.4
25
15.1 − j15.3
30
12.5 − j14.6
Philips Semiconductors
Product specification
HF power MOS transistor
BLF145
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 4 leads
SOT123A
D
A
F
q
C
B
U1
w2 M C
c
H
b
L
4
3
α
A
p
U3
U2
w1 M A B
1
2
H
Q
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D1
F
H
L
p
Q
q
U1
U2
U3
w1
w2
mm
7.47
6.37
5.82
5.56
0.18
0.10
9.73
9.47
9.63
9.42
2.72
2.31
20.71
19.93
5.61
5.16
3.33
3.04
4.63
4.11
18.42
25.15
24.38
6.61
6.09
9.78
9.39
0.51
1.02
inches
0.294
0.251
0.229 0.007
0.219 0.004
0.182
0.725
0.162
0.99
0.96
0.26
0.24
0.385
0.370
0.02
0.04
OUTLINE
VERSION
0.383 0.397 0.107 0.815
0.373 0.371 0.091 0.785
0.221 0.131
0.203 0.120
REFERENCES
IEC
JEDEC
EIAJ
SOT123A
September 1992
α
45°
EUROPEAN
PROJECTION
ISSUE DATE
97-06-28
11
Philips Semiconductors
Product specification
HF power MOS transistor
BLF145
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1992
12