2SA1468 Silicon PNP Epitaxial ADE-208-1018 (Z) 1st. Edition Mar. 2001 Application High voltage amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SA1468 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO –180 V Collector to emitter voltage VCEO –180 V Emitter to base voltage VEBO –5 V Collector current IC –100 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –180 — — V I C = –10 µA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage –180 — — V I C = –0.5 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO –5 — — V I E = –10 µA, IC = 0 DC current transfer ratio hFE*1 100 — 320 Collector to emitter saturation voltage VCE(sat) — — –0.5 V I C = –30 mA, IB = –3 mA*2 Base to emitter voltage VBE — — –1.0 V VCE = –12 V, IC = –2 mA Gain bandwidth product fT — 200 — MHz VCE = –12 V, IC = –10 mA Collector output capacitance Cob — 3.5 — pF VCB = –10 V, IE = 0, f = 1 MHz Notes: 1. The 2SA1468 is grouped by hFE as follows. 2. Pulse test Grade B C Mark INB INC hFE 100 to 200 160 to 320 2 VCE = –12 V, IC = –2 mA*2 2SA1468 Typical Output Characteristics –100 Collector Current IC (mA) –40 100 150 50 Ambient Temperature Ta (°C) –0.1 mA VCE = –12 V Ta = 25°C –30 –10 –3 –1 0 –0.2 –0.4 –0.6 –0.8 –1.0 Base to Emitter Voltage VBE (V) Ta = 25°C –1.0 –2.0 –3.0 –4.0 –5.0 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current 1,000 DC Current Transfer Ratio hFE Typical Transfer Characteristics –100 –0.5 –0.2 –20 0 –1.0 mW –60 IB = 0 0 Collector Current IC (mA) 0 –2. 50 50 –80 .0 –5 =1 100 0 –1 PC Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 150 VCE = –12 V Pulse 300 Ta = 75°C 25 –25 100 30 10 –0.1 –0.3 –1.0 –3 –10 –30 –100 Collector Current IC (mA) 3 Collector to Emitter Saturation Voltage vs. Collector Current –3.0 1,000 IC = 10 IB Pulse –1.0 –0.3 Ta = –25°C –0.1 25 75 –0.03 –0.3 Gain Bandwidth Product vs. Collector Current Gain Bandwidth Product fT (MHz) Collector to Emitter Saturation Voltage VCE(sat) (V) 2SA1468 –1.0 –3 –10 –30 –100 –300 VCE = –12 V 300 100 30 10 –1 Collector Current IC (mA) –3 Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 100 IE = 0 f = 1 MHz 30 10 3 1 –1 4 –10 –30 Collector Current IC (mA) –3 –10 –30 –100 Collector to Base Voltage VCB (V) –100 2SA1468 Package Dimensions As of January, 2001 0.65 Unit: mm 0.95 0.95 1.9 ± 0.2 + 0.10 0 – 0.1 2.8 + 0.2 – 0.6 0.16 – 0.06 0.65 1.5 ± 0.15 0.10 0.4 +– 0.05 + 0.2 1.1 – 0.1 0.3 2.95 ± 0.2 Hitachi Code JEDEC EIAJ Mass (reference value) MPAK — Conforms 0.011 g 5 2SA1468 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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