VISHAY SI7880DP

Si7880DP
New Product
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
D TrenchFETr Power MOSFET
D PWM Optimized
D New Low Thermal Resistance PowerPAKt Package with
Low 1.07-mm Profile
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
ID (A)
0.003 @ VGS = 10 V
29
0.00425 @ VGS = 4.5 V
25
APPLICATIONS
D DC/DC Converters
– Low-Side MOSFET in Synchronous Buck in Desktops
D Secondary Synchronous Rectifier
PowerPAKt SO-8
D
S
6.15 mm
5.15 mm
1
S
2
S
3
G
4
G
D
8
D
7
D
6
D
S
5
N-Channel MOSFET
Bottom View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
"20
Continuous Drain Current (TJ = 150_C)
_ a
TA = 25_C
TA = 70_C
Pulsed Drain Current (10 ms Pulse Width)
IS
TA = 25_C
Maximum Power Dissipationa
TA = 70_C
Operating Junction and Storage Temperature Range
PD
18
25
IDM
Continuous Source Current (Diode Conduction)a
V
29
ID
14
A
60
4.5
1.6
5.4
1.9
3.4
1.2
TJ, Tstg
Unit
W
_C
–55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
t v 10 sec
Maximum Junction-to-Ambienta
Maximum Junction-to-Case (Drain)
Steady State
Steady State
RthJA
RthJC
Typical
Maximum
18
23
50
65
1.0
1.5
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71875
S-20919—Rev. A, 01-Jul-02
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Si7880DP
New Product
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
VGS(th)
VDS = VGS, ID = 250 mA
1.0
IGSS
Typ
Max
Unit
3.0
V
VDS = 0 V, VGS = "20 V
"100
nA
VDS = 24 V, VGS = 0 V
1
VDS = 24 V, VGS = 0 V, TJ = 55_C
5
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
VDS w 5 V, VGS = 10 V
rDS(on)
Forward Transconductancea
Diode Forward Voltagea
m
mA
30
A
VGS = 10 V, ID = 29 A
0.0025
0.0030
VGS = 4.5 V, ID = 25 A
0.0035
0.00425
gfs
VDS = 6 V, ID = 29 A
90
VSD
IS = 4.5 A, VGS = 0 V
0.68
1.1
40.5
60
W
S
V
Dynamicb
Total Gate Charge
Qg
VDS = 15 V, VGS = 4.5 V, ID = 29 A
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
10.5
Gate Resistance
Rg
1.2
td(on)
30
tr
15
25
110
200
35
60
55
80
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
18
IF = 2.9 A, di/dt = 100 A/ms
W
50
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
60
60
VGS = 10 thru 4 V
50
I D – Drain Current (A)
I D – Drain Current (A)
50
40
30
3V
20
10
40
30
TC = 125_C
20
25_C
10
–55_C
0
0
1
2
3
4
VDS – Drain-to-Source Voltage (V)
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2
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VGS – Gate-to-Source Voltage (V)
Document Number: 71875
S-20919—Rev. A, 01-Jul-02
Si7880DP
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
8000
VGS = 4.5 V
0.004
0.003
Ciss
6400
C – Capacitance (pF)
r DS(on) – On-Resistance ( W )
0.005
VGS = 10 V
0.002
0.001
4800
3200
Coss
1600
0.000
Crss
0
0
10
20
30
40
50
60
0
4
ID – Drain Current (A)
Gate Charge
16
20
On-Resistance vs. Junction Temperature
1.8
VDS = 15 V
ID = 29 A
8
r DS(on) – On-Resistance ( W)
(Normalized)
V GS – Gate-to-Source Voltage (V)
12
VDS – Drain-to-Source Voltage (V)
10
6
4
2
VGS = 10 V
ID = 29 A
1.6
1.4
1.2
1.0
0.8
0
0
18
36
54
72
0.6
–50
90
–25
0
Qg – Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
50
75
100
125
150
On-Resistance vs. Gate-to-Source Voltage
0.010
r DS(on) – On-Resistance ( W )
TJ = 150_C
10
TJ = 25_C
0.008
0.006
ID = 29 A
0.004
0.002
0.000
1
0.00
25
TJ – Junction Temperature (_C)
60
I S – Source Current (A)
8
0.2
0.4
0.6
0.8
VSD – Source-to-Drain Voltage (V)
Document Number: 71875
S-20919—Rev. A, 01-Jul-02
1.0
1.2
0
2
4
6
8
10
VGS – Gate-to-Source Voltage (V)
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Si7880DP
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.4
200
0.2
–0.0
Power (W)
V GS(th) Variance (V)
160
ID = 250 mA
–0.2
–0.4
120
80
–0.6
40
–0.8
–1.0
–50
–25
0
25
50
75
100
125
0
0.001
150
0.01
TJ – Temperature (_C)
0.1
1
10
Time (sec)
Safe Operating Area
100
1 ms
Limited by
rDS(on)
I D – Drain Current (A)
10
10 ms
100 ms
1
1s
0.1
10 s
TC = 25_C
Single Pulse
dc
0.01
0.1
1
10
100
VDS – Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 50_C/W
3. TJM – TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10–4
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4
10–3
10–2
10–1
1
Square Wave Pulse Duration (sec)
10
100
600
Document Number: 71875
S-20919—Rev. A, 01-Jul-02
Si7880DP
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
10–4
Document Number: 71875
S-20919—Rev. A, 01-Jul-02
10–3
10–2
10–1
Square Wave Pulse Duration (sec)
1
10
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