e PTB 20219 70 Watts, 925–960 MHz Cellular Radio RF Power Transistor Description The 20219 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation across the 925 to 960 MHz frequency band. It is rated at 70 watts minimum output power for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • • Typical Output Power vs. Input Power 70 Watts, 925–960 MHz Class AB Characteristics Guaranteed Performance at 26 Volts, 960 MHz - Output Power = 70 Watts - Collector Efficiency = 50% min. at 70 Watts - IMD = -30 max. at 50 W(PEP) Gold Metallization Silicon Nitride Passivated 100 90 Output Power (Watts) 80 70 60 2021 9 50 LOT 40 20 f = 960 MHz VCC = 26 V 10 ICQ = 0.200 A 30 COD E 0 0 2 4 6 8 10 Input Power (Watts) Package 20216 Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 40 Vdc Collector-Base Voltage VCBO 65 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 20 Adc Total Device Dissipation at Tflange = 25° C PD Above 25° C derate by 159 Watts 0.95 W/°C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70° C) RθJC 1.1 °C/W 1 9/28/98 e PTB 20219 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IB = 0 A, IC = 100 mA V(BR)CEO 25 30 — Volts Breakdown Voltage C to E VBE = 0 V, IC = 100 mA V(BR)CES 55 70 — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 3.5 5 — Volts DC Current Gain VCE = 5 V, IC = 1 A hFE 20 50 100 — Symbol Min Typ Max Units Gain (VCC = 26 Vdc, Pout = 70 W, ICQ = 200 mA, f = 960 MHz) Gpe 8.5 9.5 — dB Collector Efficiency (VCC = 26 Vdc, Pout = 70 W, ICQ = 200 mA, f = 960 MHz) ηC 50 — — % Intermodulation Distortion (VCC = 26 Vdc, Pout = 50 W(PEP), ICQ = 200 mA, f = 960 MHz) IMD — -31 — dBc Ψ — — 10:1 — RF Specifications (100% Tested) Characteristic Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 50 W(PEP), ICQ = 200 mA, f = 960 MHz—all phase angles at frequency of test) Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 26 Vdc, Pout = 70 W, ICQ = 200 mA) Z Source Frequency Z Load Z Source Z Load MHz R jX R jX 925 2.0 2.4 2.1 1.6 942 2.0 2.9 2.1 1.8 960 2.1 3.4 2.2 2.0 Z0 = 10 Ω 2 9/11/97 e PTB 20219 Typical Characteristics Output Power vs. Supply Voltage Gain vs. Frequency (as measured in a broadband circuit) 12 75 70 11 65 Gain (dB) Output Power (Watts) 80 60 f = 960 MHz VCC = 26 V 55 50 ICQ = 0.200 A 8 925 40 17 19 21 23 25 Pout = 70 W VCC = 26 V 9 ICQ = 0.200 A Pin = 6.5 W 45 10 27 930 935 Vcc, Supply Voltage 950 955 960 -15 f1 =959.900 MHz 70 -20 f2 = 960.000 MHz IMD (dBc) 60 50 40 f = 960 MHz VCC = 26 V 30 20 VCC = 26 V -25 ICQ = 200 mA -30 -35 ICQ = 0.200 A 10 -40 0 10 20 30 40 50 60 70 10 80 Output Power (Watts) 20 30 40 Output Power (Watts-PEP) Test Circuit Parts Layout (not to scale) 3 9/11/97 945 Intermodulation Distortion vs. Power Output Efficiency vs. Output Power 80 Efficiency (%) 940 Frequency (MHz) 50 60 e PTB 20219 Test Circuit Schematic for test circuit Q1 l1–l6 C1, C7 C2, C3 C4 C5 C6 Circuit Board PTB 20219, NPN RF Transistor Microstrip (see Artwork detail below) 51 pF, Capacitor ATC 100 B 3.0 pF, Capacitor ATC 100 B 7.5 pF, Capacitor ATC 100 B 6.2 pF, Capacitor ATC 100 B 4.3 pF, Capacitor ATC 100 B .031” Thick, G-200, Solid Copper Bottom Artwork (1 inch Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 ) 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 4 Specifications subject to change without notice. LF © 1997 Ericsson Inc. EUS/KR 1301-PTB 20219 Uen Rev. C 09-28-98