e PTB 20125 100 Watts, 1.8–2.0 GHz PCN/PCS Power Transistor Description The 20125 is an NPN, push-pull RF power transistor intended for 26 Vdc class AB operation from 1.8 to 2.0 GHz. Rated at 100 watts PEP minimum output power, it is specifically intended for operation as a final stage in CDMA or TDMA systems. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. 100 Watts, 1.8–2.0 GHz Class AB Characteristics 40% Collector Efficiency at 100 Watts Gold Metallization Silicon Nitride Passivated 12 Output Power (W) Gain (dB) 11 10 9 140 120 VCC = 26 V 100 ICQ = 200 mA 80 8 Gain (dB) 7 60 40 6 Efficiency (%) 5 1750 1800 1850 1900 1950 2000 20 2050 Output Power & Efficiency Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency 2012 5 LOT Frequency (MHz) COD E Package 20225 * Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 55 Vdc Collector-Base Voltage VCBO 55 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 14 Adc Total Device Dissipation at Tflange = 25°C PD 400 Watts 2.3 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 0.44 °C/W * This product not recommended or specified for CW or class A operation. Recommend two PTB 20175 for these applications. 1 5/1 9/98 e PTB 20125 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E VBE = 0 V, IC = 100 mA V(BR)CES 55 — — Volts Breakdown Voltage E to B IC = 0 A, IE = 20 mA V(BR)EBO 4.0 5.0 — Volts DC Current Gain VCE = 10 V, IC = 1.5 A hFE 30 50 120 — Symbol Min Typ Max Units Gain (VCC = 26 Vdc, Pout = 40 W(PEP), ICQ = 2 x 100 mA, f = 2 GHz) Gpe 7.0 8.0 — dB Collector Efficiency (VCC = 26 Vdc, Pout = 100 W, ICQ = 2 x 100 mA, f = 2 GHz) ηC 40 45 — % Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 100 W(PEP), ICQ = 2 x 100 mA, f = 2 GHz —at all phase angles) Ψ — — 5:1 — RF Specifications (100% Tested) Characteristic Typical Performance 50 Gain (dB) 6 Efficiency (%) VCC = 26 V - 30 5 ICQ = 200 mA Pout = 50 W 4 40 20 -15 2 -25 10 Return Loss (dB) 0 1900 1925 1950 1975 -35 0 2000 140 Output Power (Watts) Gain (dB) 8 Output Power vs. Supply Voltage Efficiency (%) 60 Return Loss (dB) Broadband Test Fixture Performance 10 130 120 110 100 90 ICQ = 200 mA f = 2000 MHz 80 70 22 Frequency (MHz) 23 24 25 Supply Voltage (Volts) 2 26 27 e PTB 20125 Typical Output Power vs. Input Power Power Gain vs. Output Power 160 Power Gain (dB) 9 Output Power (Watts) 10 ICQ = 200 mA 8 ICQ = 100 mA 7 6 VCC = 26 V f = 2000 MHz ICQ = 50 mA 140 120 100 80 60 20 5 0.1 1.0 10.0 Vcc = 26 V ICQ = 200 mA f = 2000 MHz 40 0 100.0 0 5 10 Output Power (Watts) 15 20 25 30 Input Power (Watts) Intermodulation Distortion vs. Power Output -30 -31 IMD (dBc) -32 -33 -34 -35 VCC = 26 V -36 ICQ = 2 x 50 mA -37 f1 = 1.999 GHz -38 f2 = 1.998 GHz -39 -40 10 20 30 40 50 60 70 80 90 100 Output Power (Watts-PEP) Impedance Data (VCC = 26 Vdc, Pout = 100 W, ICQ = 2 x 100 mA) Frequency Z Source Z Source Z Load Z Load GHz R jX R jX 1.75 5.4 -6.2 5.1 -6.2 1.80 5.8 -7.6 5.2 -5.8 1.85 6.0 -8.6 5.4 -5.0 1.90 7.2 -9.2 5.6 -4.0 1.95 8.8 -9.0 5.8 -2.8 2.00 10.4 -7.2 6.0 -2.4 2.05 11.8 -2.4 6.2 -1.8 3 Z0 = 50 Ω e PTB 20125 Test Circuit Q1 Block Diagram for f = 2 GHz Q1 l1, l2, l21, l22 l3, l4 l5, l6 l7, l8, l11, l12 l9, l10 l13, l14 l15, l16 l17, l18 l19, l20 L1, L2 L3, L4 L5, L6 C1, C2 C3-8, C17, C18 C9, C11, C13, C15 C10, C12, C14, C16 R1, R2 T1, T2 Board PTB 20125 NPN RF Transistor .25λ 2GHz Microstrip 50 Ω .085λ 2GHz Microstrip 80 Ω .067λ 2GHz Microstrip 20 Ω .0217λ 2GHz Microstrip 11.7 Ω .053λ 2GHz Microstrip 8.15 Ω .055λ 2GHz Microstrip 6.7 Ω .052λ 2GHz Microstrip 11.45 Ω .060λ 2GHz Microstrip 16.9 Ω .252λ 2GHz Microstrip 75 Ω Placement Diagram (not to scale) 4 6.8 nh SMT Inductor 56 nh SMT Inductor 4 mm. SMT Ferrite 0–4 pF Johanson Piston Trimmer 33 pF (B ATC 100) .1 µF 1206 10 µF SMT Tantalum 22 Ω SMT UT 70-50 0.031: G200, Solid Copper Bottom, AlliedSignal e Artwork (1 inch Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 PTB 20125 ) 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 5 Specifications subject to change without notice. L3 © 1996 Ericsson Inc. EUS/KR 1301-PTB 20125 Uen Rev. C 09-28-98