PTF 10137 12 Watts, 1.0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10137 is a 12 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 60% efficiency with 18 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. Typical Output Power & Efficiency vs. Input Power 20 • Performance at 960 MHz, 28 Volts - Output Power = 12 Watts - Efficiency = 60% Typ - Power Gain = 18 dB Typ • Full Gold Metallization • Silicon Nitride Passivated • Surface Mountable • Available in Tape and Reel • 100% Lot Traceability 80 15 60 Efficiency Output Power (Watts) Efficiency (%) VDD = 28 V 10 40 IDQ = 160 mA f = 960 MHz Output Power (W) 5 A-1 101 37 5 234 699 42 20 0 0 0.0 0.2 0.4 0.6 Input Power (Watts) Package 20244 RF Specifications (100% Tested) Characteristic Symbol Min Typ Max Units Gps 16.5 18 — dB P-1dB 12 15 — Watts Drain Efficiency (VDD = 28 V, POUT = 12 W, IDQ = 160 mA, f = 960 MHz) h 55 60 — % Load Mismatch Tolerance (VDD = 28 V, POUT = 12 W, IDQ = 160 mA, f = 960 MHz Y — — 10:1 — Common Source Power Gain (VDD = 28 V, POUT = 12 W, IDQ = 160 mA, f = 960 MHz) Power Output at 1 dB Compressed (VDD = 28 V, IDQ = 160 mA, f = 960 MHz) —all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated. e 1 e PTF 10137 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA V(BR)DSS 65 — — Volts Drain-Source Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1 mA Gate Threshold Voltage VDS = 10 V, ID = 75 mA VGS(th) 3.0 — 5.0 Volts Forward Transconductance VDS = 10 V, ID = 0.5 A gfs — 0.9 — Siemens Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS ±20 Vdc Operating Junction Temperature TJ 200 °C Total Device Dissipation PD 58 Watts 0.33 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to 150 °C Thermal Resistance (TCASE = 70°C) RqJC 3.0 °C/W Typical Performance Broadband Test Fixture Performance Gain 16 60 Efficiency (%) 15 50 14 VDD = 28 V 40 13 IDQ = 160 mA 30 Output Power (W) 12 11 840 880 920 960 20 10 1000 80 Gain (dB) 16 70 Efficiency (%) 12 8 VDD = 28 V 60 IDQ = 160 mA -10 POUT = 12 W 50 Return Loss (dB) 4 960 Frequency (MHz) 970 980 Frequency (MHz) 2 990 -20 40 1000 Efficiency 70 Gain 17 80 Gain (dB) Output Power & Efficiency 18 20 Return Loss Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency e PTF 10137 Power Gain vs. Output Power Output Power vs. Supply Voltage 19 20 17 IDQ = 80 mA 16 IDQ = 40 mA 15 VDD = 28 V f = 960 MHz 14 18 16 14 IDQ = 160 mA f = 960 MHz 12 10 0.1 1.0 10.0 100.0 24 26 Intermodulation Distortion vs. Output Power 0 Cds and Cgs (pF) VDD = 28 V, IDQ = 160 mA f1 =960.0 MHz, f2 = 960.1 MHz -20 3rd Order -30 5th -40 7th -50 32 70 6 60 5 VGS = 0 V f = 1 MHz 50 40 4 3 Cgs 30 2 Crss 20 1 Cds 10 -60 0 5 10 15 0 0 20 10 Output Power (Watts-PEP) Bias Voltage vs. Temperature Voltage normalized to 1.0 V Series show current (A) 1.02 1.01 1.00 0.99 0.98 0.97 0.96 0.075 0.33 0.585 0.84 1.095 1.35 0.95 -20 20 30 Supply Voltage (Volts) 1.03 Bias Voltage (V) IMD (dBc) 30 Capacitance vs. Supply Voltage (as measured in a broadband circuit) -10 28 Supply Voltage (Volts) Output Power (Watts) 0 20 40 Temp. (°C) 3 60 80 100 40 Crss (pF) Power Gain (dB) Output Power (Watts) IDQ = 160 mA 18 e PTF 10137 Impedance Data D Z Load Z0 = 50 W -> Z Source R -- RA T O RD G E NE Z Source 1000 MHz 0.2 0.1 0.0 840 MHz jX 4.3 3.3 2.8 2.3 2.1 2.0 1.6 2.6 3.7 1000 MHz 0.1 E LE < R 4.1 3.8 3.7 3.6 4.1 4.3 4.8 5.3 5.0 840 MHz AV -- - W jX 1.9 0.8 0.1 -0.3 -0.7 -0.9 -1.2 -1.2 -0.9 - WAV E LE NG THS R 1.1 0.8 0.8 0.7 0.6 0.8 1.1 1.6 1.6 LO AD S TO W A RD NG T H MHz 840 860 880 900 920 940 960 980 1000 Z Load W 0.1 Z Source W Z Load T OW A S 0.3 G Frequency 0.2 VDD = 28 V, IDQ = 160 mA, P-1dB = 18 W Typical Scattering Parameters (VDS = 28 V, ID = 450 mA) f (MHz) Mag 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 0.862 0.866 0.872 0.881 0.888 0.896 0.905 0.910 0.920 0.927 0.932 0.940 0.942 0.948 0.953 0.955 0.958 0.961 0.963 0.967 0.967 0.967 0.970 0.970 0.972 0.973 0.978 0.978 0.981 0.981 0.982 0.983 0.983 0.983 0.983 0.981 0.981 0.981 0.981 0.981 0.979 0.979 0.975 S11 Ang Mag -126 -135 -146 -153 -157 -161 -164 -166 -168 -169 -171 -173 -174 -175 -177 -178 -179 -180 179 178 177 176 175 174 173 172 172 171 170 169 168 167 167 166 165 164 163 162 161 161 160 159 158 25.8 21.1 15.5 12.0 9.57 7.86 6.55 5.53 4.74 4.09 3.57 3.15 2.79 2.49 2.23 2.01 1.83 1.66 1.52 1.39 1.27 1.18 1.09 1.01 0.943 0.874 0.825 0.772 0.729 0.689 0.647 0.615 0.580 0.549 0.525 0.499 0.478 0.454 0.431 0.414 0.395 0.382 0.371 S21 Ang Mag 101 93.6 80.9 71.6 63.7 57.0 51.0 45.7 40.8 36.6 32.4 28.9 25.5 22.1 19.3 16.2 13.6 11.1 8.52 6.44 4.07 1.96 0.12 -2.03 -3.66 -5.57 -7.37 -8.77 -10.7 -12.1 -13.9 -15.7 -16.9 -18.7 -20.3 -21.8 -23.4 -24.3 -26.0 -27.3 -28.6 -30.0 -30.7 0.018 0.018 0.018 0.017 0.016 0.015 0.013 0.012 0.011 0.009 0.008 0.007 0.006 0.005 0.004 0.003 0.003 0.003 0.003 0.004 0.004 0.005 0.006 0.006 0.007 0.008 0.009 0.009 0.010 0.011 0.012 0.013 0.013 0.014 0.015 0.015 0.016 0.017 0.018 0.018 0.019 0.019 0.020 4 S12 Ang Mag 11.5 3.96 -5.92 -13.4 -19.1 -24.0 -27.9 -31.0 -32.8 -34.0 -35.0 -34.2 -32.7 -27.9 -20.5 -8.60 10.9 32.3 47.7 57.8 63.1 68.8 70.7 73.2 74.5 75.7 75.8 76.4 76.6 77.2 76.3 75.0 74.7 74.4 74.7 74.0 72.9 72.1 71.3 71.3 70.8 69.8 69.1 0.575 0.583 0.587 0.613 0.646 0.679 0.713 0.742 0.770 0.792 0.813 0.834 0.849 0.865 0.874 0.884 0.896 0.902 0.912 0.917 0.921 0.929 0.932 0.937 0.943 0.943 0.950 0.948 0.952 0.958 0.958 0.966 0.964 0.961 0.962 0.958 0.967 0.967 0.967 0.969 0.963 0.969 0.969 S22 Ang -78.7 -86.4 -97.4 -106 -113 -119 -124 -129 -133 -137 -141 -144 -147 -150 -152 -155 -157 -159 -161 -162 -164 -166 -167 -169 -170 -172 -173 -174 -176 -177 -178 -179 -180 179 178 176 175 175 173 173 172 170 169 e PTF 10137 Test Circuit Test Circuit Schematic for f = 960 MHz DUT l1, l6 l2 l3 l4 l5 PTF 10137 0.197 l 960 MHz 0.018 l 960 MHz 0.184 l 960 MHz 0.047 l 960 MHz Microstrip 50 W Microstrip 10 W Microstrip 44 W Microstrip 12.7 W Microstrip 50 W C1 C2,C4,C5,C8 C3,C6 C7 C9, C10 R1, R2 L1,L2 Circuit Board Assembly Diagram (not to scale) 5 ATC 100 B Capacitor, 8.2 pF, ATC 100 B ATC 100 B Capacitor, 36 pF, ATC 100 B Digi-Key P4525-ND Capacitor, 0.1 mF, 50V Digi-Key P5182-ND Capacitor, 100 mF, 50V ATC 100 B 2.0 pF Capacitor, ATC 100 B Digi-Key 2.2 QBK Resistor, 220 W, 1/4W N/A 4 Turn, 20 AWG, .120 I.D. .028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz. copper e PTF 10137 Test Circuit Artwork (1 inch ) Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: [email protected] www.ericsson.com/rfpower 6 Specifications subject to change without notice. L3 © 1999 Ericsson Inc. EUS/KR 1301-PTF 10137 Uen Rev. A 10-28-99