PTF 10136 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10136 is a 6–watt GOLDMOS FET intended for large signal amplifier applications from to 1.0 GHz. It operates at 57% efficiency with 19 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • Typical Output Power & Efficiency vs. Input Power 10 Performance at 960 MHz, 28 Volts - Output Power = 6 Watts - Efficiency = 57% Typ - Power Gain = 19 dB Typ Full Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel 100% Lot Traceability 70 8 56 6 42 4 VDD = 28 V 28 2 IDQ = 70 mA f = 960 MHz 14 Efficiency (%) X Output Power (Watts) Efficiency 101 36 A-1 234 569 935 Output Pow er 0 0.00 0.05 0.10 0 0.15 Input Power (Watts) Package 20244 RF Specifications (100% Tested) Characteristic Common Source Power Gain (VDD = 28 V, POUT = 1 W, IDQ = 70 mA, f = 960 MHz) Power Output at 1 dB Compressed (VDD = 28 V, IDQ = 70 mA, f = 960 MHz) Drain Efficiency (VDD = 28 V, POUT = 6 W, IDQ = 70 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 6 W, IDQ = 70 mA, f = 960 MHz— all phase angles at frequency of test) Symbol Min Typ Max Units Gps 18 19 — dB P-1dB 6.0 7.5 — Watts h 50 57 — % Y — — 10:1 — All published data at TCASE = 25°C unless otherwise indicated. e 1 e PTF 10136 Electrical Characteristics (100% Tested) Characteristic Conditions Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA Symbol Min Typ Max Units V(BR)DSS 65 — — Volts Drain-Source Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1 mA Gate Threshold Voltage VDS = 10 V, ID = 75 mA VGS(th) 3.0 — 5.0 Volts Forward Transconductance VDS = 10 V, ID = 0.5 A gfs — 0.3 — Siemens Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS ±20 Vdc Operating Junction Temperature TJ 200 °C Total Device Dissipation PD 39 Watts 0.22 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C) RqJC 4.5 °C/W Typical Performance Efficiency (%) VDD = 28 V 16 12 8 960 Frequency (MHz) -8 Return Loss (dB) 970 980 Frequency (MHz) 2 40 IDQ = 70 mA POUT = 6 W 990 30 -15 20 -23 1000 Return Loss Gain (dB) 50 Efficiency 60 20 Gain 75 22 Gain (dB) 20 60 18 16 Efficiency (%) 45 14 VDD = 28 V 12 30 IDQ = 70 mA 10 Output Pow er (W) 8 15 6 4 0 840 860 880 900 920 940 960 980 100 0 Broadband Test Fixture Performance 24 Output Power & Efficiency Gain Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency e PTF 10136 Power Gain vs. Output Power Output Power vs. Supply Voltage 10 20 IDQ = 70 mA 19 IDQ = 35 mA Output Power (Watts) 18 17 VDD = 28 V f = 960 MHz IDQ = 20 mA 16 15 8 6 4 IDQ = 70 mA f = 960 MHz 2 0 14 0.1 1.0 24 10.0 26 Intermodulation Distortion vs. Output Power 32 Capacitance vs. Supply Voltage (as measured in a broadband circuit) 20 0 -20 Cds and Cgs (pF) VDD = 28 V, IDQ = 70 mA f1 = 960.0 MHz, f2 = 960.1 MHz 3rd Order -30 5th -40 7th -50 3.0 VGS = 0 V f = 1 MHz 16 Cgs 12 2.5 2.0 8 1.5 Cds 4 1.0 Crss 0 -60 0.5 0 0 2 4 6 8 10 10 Bias Voltage vs. Temperature 1.03 Voltage normalized to 1.0 V Series show current (A) 1.02 1.01 0.05 1 0.145 0.99 0.98 0.24 0.335 0.97 0.43 0.96 0.525 0.95 -20 20 30 Supply Voltage (Volts) Output Power (Watts-PEP) Bias Voltage (V) IMD (dBc) 30 Supply Voltage (Volts) Output Power (Watts) -10 28 30 80 Temp. (°C) 3 130 40 Crss (pF) Power Gain (dB) 21 e PTF 10136 Impedance Data VDD = 28 V, IDQ = 70 mA, P-1dB = 6 W Z0 = 50 W D Z Source Z Load G S Z Source W Frequency Z Load W MHz R jX R jX 840 1.6 7.2 8.9 15.0 860 1.4 7.1 9.2 13.1 880 1.4 7.1 9.7 12.6 900 1.3 6.9 9.6 12.5 920 1.2 6.8 10.4 11.9 940 1.2 5.7 10.6 11.7 960 1.3 5.5 14.3 11.1 980 1.4 5.1 14.4 11.2 1000 1.7 4.9 16.3 11.1 4 e PTF 10136 Typical Scattering Parameters (VDS = 28 V, ID = 200 mA) f (MHz) Mag S11 Ang Mag S21 Ang Mag S12 Ang Mag Ang 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 0.962 0.925 0.918 0.913 0.906 0.900 0.896 0.894 0.895 0.896 0.897 0.901 0.900 0.905 0.908 0.910 0.917 0.916 0.919 0.923 0.925 0.932 0.929 0.930 0.934 0.935 0.943 0.942 0.942 0.946 0.943 0.951 0.951 0.951 0.952 0.947 0.951 0.951 0.949 0.953 0.947 0.950 0.946 -65.3 -78.2 -95.7 -109 -120 -128 -134 -140 -144 -148 -152 -155 -158 -160 -162 -165 -167 -169 -171 -172 -174 -176 -177 -179 180 178 177 176 174 173 171 170 169 167 166 165 163 162 161 160 159 157 156 22.2 20.0 17.4 15.0 13.0 11.4 9.98 8.84 7.90 7.09 6.41 5.85 5.33 4.89 4.49 4.14 3.85 3.56 3.31 3.09 2.88 2.70 2.53 2.38 2.24 2.10 2.00 1.89 1.80 1.71 1.62 1.55 1.48 1.41 1.35 1.28 1.24 1.18 1.13 1.09 1.05 1.01 0.982 138 129 116 106 96.8 89.2 82.5 76.4 70.9 65.9 61.1 56.9 52.7 48.7 45.0 41.2 37.8 34.6 31.2 28.4 25.2 22.4 19.7 16.8 14.5 11.9 9.38 7.16 4.51 2.46 -0.02 -2.40 -4.21 -6.51 -8.48 -10.8 -13.0 -14.7 -16.8 -18.7 -20.8 -22.9 -24.2 0.016 0.018 0.021 0.022 0.023 0.023 0.022 0.022 0.021 0.020 0.019 0.018 0.017 0.015 0.014 0.013 0.012 0.011 0.009 0.008 0.007 0.006 0.006 0.005 0.005 0.005 0.005 0.006 0.007 0.008 0.009 0.010 0.011 0.012 0.013 0.014 0.015 0.017 0.018 0.019 0.020 0.021 0.022 48.1 39.0 28.5 19.7 12.4 6.10 0.77 -3.81 -7.93 -11.6 -15.0 -17.5 -19.8 -21.4 -22.9 -24.2 -24.3 -24.3 -22.7 -20.5 -16.5 -10.7 -1.76 9.41 22.3 33.2 43.6 52.3 59.0 64.1 67.2 69.7 71.9 72.2 72.5 72.0 71.8 71.9 71.3 71.1 70.4 69.4 68.6 0.888 0.853 0.810 0.776 0.754 0.742 0.737 0.735 0.739 0.743 0.752 0.763 0.771 0.782 0.787 0.797 0.808 0.817 0.828 0.833 0.841 0.849 0.855 0.864 0.871 0.875 0.883 0.883 0.891 0.897 0.902 0.911 0.911 0.911 0.912 0.911 0.920 0.920 0.923 0.925 0.922 0.929 0.930 -31.8 -37.7 -46.7 -54.3 -61.2 -67.1 -72.9 -78.3 -83.4 -88.4 -93.2 -97.5 -102 -106 -110 -113 -117 -120 -123 -126 -129 -132 -135 -138 -140 -142 -145 -147 -149 -151 -153 -155 -157 -159 -161 -163 -165 -166 -168 -170 -171 -173 -175 5 S22 e PTF 10136 Test Circuit Test Circit Schematic fo f=960 MHz DUT l1 l2, l3 l4 l5 l6 PTF 10136 LDMOS Transistor 0.221 l 960 MHz Microstrip 8.9 W 0.020 l 960 MHz Microstrip 41.0 W 0.190 l 960 MHz Microstrip 14.1 W 0.024 l 960 MHz Microstrip 50 W 0.034 l 960 MHz MIcrostrip 50 W C1, C2, C3, C6 C4 C5 C7 C8 J1, J2 L1 R1, R2, R3 Circuit Board 36 pF, Capacitor ATC 100 B 0.1µF, 50 V, Capacitor Digi-Key P4525-ND 100 mF, 50 V, Capacitor, Digi-Key P5782-ND 0.7 mF ATC 100 B 5.1µF ATC 100 B Connector, SMA, Female, Panel Mount N/A 4 Turns, 22 AWG, .085 Dia I.D. Magnet Wire N/A Resistor, 220ohm, 1/4W Digi-Key 2.2QBK .031" thick, er = 4.0, G200, AlliedSignal, 2 oz. copper C6 Placement Diagram (not to scale) 6 e PTF 10136 ERICSSON ERICSSON 10136 OUT PUT 10136 INPUT Artwork ( not to scale ) Case Outline Specifications Package 20244 Ericsson Inc. Microelectronics Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: [email protected] www.ericsson.com/rfpower 7 Specifications subject to change without notice. L3 © 1998, 1999, 2000, 2001 Ericsson Inc. EUS/KR 1522-PTF 10136 Uen Rev. B 03-15-01