e PTB 20237 150 Watts, 470–860 MHz UHF TV Power Transistor Description The 20237 is a class AB, NPN, common emitter UHF TV power transistor intended for 28 Vdc operation from 470 to 860 MHz. Rated at 150 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. 470–860 MHz, 28 Volts Class AB Characteristics 50% Collector Efficiency at 150 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power Output Power (Watts) 200 175 150 125 202 37 100 LOT 75 VCC = 28 V 50 ICQ = 0.800 A Total f = 860 MHz 25 COD E 0 0 4 8 12 16 20 24 Input Power (Watts) Package 20236 Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 55 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage (collector open) VEBO 4 Vdc Collector Current (continuous) IC 25 Adc Total Device Dissipation at Tflange = 25°C PD 330 Watts 1.89 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 0.53 °C/W 1 9/28/98 e PTB 20237 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IC = 0 A, IB = 100 A V(BR)CEO 28 30 — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 3.5 5 — Volts DC Current Gain VCE = 5 V, IC = 1 mA hFE 20 50 100 — Symbol Min Typ Max Units Gain (VCC = 28 Vdc, POUT = 150 W, ICQ = 800 mA Total, f = 470, 860 MHz) Gpe 8 9 — dB Collector Efficiency (VCC = 28 Vdc, POUT = 150 W, ICQ = 800 mA Total, f = 470, 860 MHz) ηC 50 — — % IMD — –44 — dBc Ψ — — 3:1 — RF Specifications (100% Tested) Characteristic Intermodulation Distortion (VCC = 28 Vdc, ICQ = 800 mA Total, POUT = 100 W(PEP), f1 = 855.25 MHz, Vision = -8 dB, f2 = 859.75 MHz, Subcarrier = -16 dB, f3 = 860.75 MHz, Sound = -10 dB) Load Mismatch Tolerance (VCC = 28 Vdc, POUT = 150 W(PEP), ICQ = 800 mA Total, f1 = 860.0 MHz, f2 = 860.1—all phase angles at frequency of test) Typical Performance Gain vs. Frequency 11 (as measured in a broadband circuit) Gain (dB) 10 9 VCC = 28 V ICQ = 0.800 A Total Pout = 150 W 8 7 470 520 570 620 670 720 Frequency (MHz) 2 5/6/98 770 820 870 e PTB 20237 Impedance Data (shown for fixed-tuned broadband circuit) VCC = 28 Vdc, POUT = 150 W, ICQ = 800 mA Total Z Source Z Load Z0 = 50 Ω Frequency Z Source Z Load MHz R jX R jX 470 1.10 3.00 4.40 0.80 560 1.20 4.30 3.15 1.50 665 2.35 5.85 2.50 0.35 760 7.10 7.10 1.85 -0.55 860 6.75 -1.10 1.50 -0.60 Test Circuit Schematic for broadband test fixture (f = 470–860) DUT C1 C2, 3 C4, 16 C5,7 C6, 8 C9 C10 C11 C12 C13 20237 10 pF 0.001 uF 100 uF, 50 V 3.6 pF 0.35–3.5 pF 15 pF 7.5 pF 12 pF 8.2 pF 0.35–3.5 pF C14 C15 C17, 18 C19 C20, 21 L1 L2 R1 R2 R3-6 Circuit Board ATC 100A ATC 100B Electrolytic Capacitor ATC 100B Johanson Trimmer Dialectric Labs ATC 100B ATC 100B ATC 100B Johanson Trimmer 3 5/6/98 7.5 pF 75 pF 0.1 uF 22 pF 100 pF ATC 100B ATC 100B 1206 Chip ATC 100B ATC 100A 25 W, Semi-rigid Balun 25 W, Semi-rigid Balun 100 W Chip Resistor 100 W Chip Resistor 1W Chip Resistor Copper Clad PTFE er = 2.5, .031" Thick e PTB 20237 Components Layout (not to scale) Artwork (1 inch Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 ) 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 4 Specifications subject to change without notice. LF © 1997 Ericsson Inc. EUS/KR 1301-PTB 20237 Uen Rev. B 09-28-98