e PTB 20170 30 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20170 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 30 Watts, 1.8–2.0 GHz Class AB Characteristics Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power Output Power (Watts) 40 35 30 2017 25 LOT 20 15 VCC = 26 V 10 ICQ = 100 mA f = 2.0 GHz 5 COD E 0 0 0 1 2 3 4 5 6 7 Input Power (Watts) Package 20209 Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 55 Vdc Collector-Emitter Voltage VCES 55 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 6.7 Adc Total Device Dissipation at Tflange = 25°C PD 123 Watts 0.7 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 1.43 °C/W 1 9/28/98 e PTB 20170 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IC = 50 mA, RBE = 27 Ω V(BR)CER 55 — — Volts Breakdown Voltage C to E VBE = 0 V, IC = 50 mA V(BR)CES 55 — — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 4 5 — Volts DC Current Gain VCE = 5 V, IC = 250 mA hFE 20 50 120 — Symbol Min Typ Max Units Gain (VCC = 26 Vdc, Pout = 30 W, ICQ = 100 mA, f = 2.0 GHz) Gpe 7.0 8.5 — dB Collector Efficiency (VCC = 26 Vdc, Pout = 30 W, ICQ = 100 mA, f = 2.0 GHz) ηC 38 46 — % Ψ — — 5:1 — RF Specifications (100% Tested) Characteristic Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 30 W(PEP), ICQ = 100 mA, f = 2.0 GHz—all phase angles at frequency of test) Typical Performance Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency 60 ICQ = 100 mA Gain Efficiency (%) 10 50 9 8 Output Power (W) 30 Gain (dB) 7 1750 1800 40 1850 1900 1950 2000 20 2050 9 50 Gain (dB) Efficiency (%) 8 7 VCC = 26 V -15 20 6 Return Loss (dB) 5 1900 1925 1950 1975 Frequency (MHz) 2 40 - 30 5 ICQ = 100 mA POUT = 30 W Frequency (MHz) 5/18/98 60 -25 10 -35 0 2000 Return Loss (dB) Efficiency (%) VCC= 26 V 11 Gain (dB) 70 Output Power & Efficiency 12 Broadband Test Fixture Performance 10 e PTB 20170 Output Power vs. Supply Voltage Intermodulation Distortion vs. Power Output -30 VCC = 26 V -32 ICQ = 100 mA 35 IMD (dBc) Output Power (Watts) 40 30 ICQ = 100 mA f = 2.0 GHz 25 f1 = 1.999 GHz -34 f2 = 2.000 GHz -36 -38 -40 20 22 23 24 25 26 5 27 Supply Voltage (Volts) 40 9 Power Gain (dB) Efficiency (%) 50 30 20 VCC = 26 V ICQ = 100 mA f = 2 GHz 10 15 20 25 30 25 ICQ = 100 mA 8 ICQ = 50 mA 7 VCC = 26 V f = 2.0 GHz ICQ = 25 mA 6 0 5 20 Power Gain vs. Output Power 10 0 15 Output Power (Watts-PEP) Efficiency vs. Output Power 10 10 0.1 30 Output Power (Watts) 1.0 10.0 100.0 Output Power (Watts) Impedance Data Z0 = 50 Ω (VCC = 26 Vdc, Pout = 30 W, ICQ = 100 mA) Z Source Frequency Z Load Z Source Z Load GHz R jX R jX 1.75 2.9 -6.3 2.60 -0.7 1.80 3.1 -6.6 2.40 -1.2 1.85 3.9 -7.1 2.20 -1.5 1.90 6.4 -7.8 2.00 -1.8 1.95 7.7 -6.3 1.80 -2.2 2.00 8.6 -5.6 1.85 -2.7 2.05 7.3 -2.7 1.92 -3.2 3 5/18/98 e PTB 20170 Test Circuit * Thermally linked to RF device. Schematic for f = 2 GHz Q1 L1 L1 L5, L6 L7 L8 C1, C2, C3, C4 C5, C7 C6, C8 C9 R1 R2 Circuit Board 20170, NPN RF Transistor .185 λ 2GHz, Microstrip 18 Ω .195 λ 2GHz, Microstrip 9.5 Ω 4 Turn #20 AWG, .120” I.D. 56 µA SMT Inductor Ferrite Bead 33 pF ATC-B 33 pF ATC-B 0.1 υF, 1206 10 pF SMT Electrolytic Capacitor 0–4 pF Johanson Variable Capacitor Bias Parts (not shown on layout) Q2 BCP 56 D1 BAV 99 C10, C11 0.1 pF R2 2K R3, R4 10 Ω Board Assembly (not to scale) 4 5/18/98 22 Ω 118 W SMT Resistor 12 Ω .5 W Axial Resistor .031 G-200, Solid Copper Bottom AlliedSignal SMT NPN Transistor Diode SMT Capacitor Potentiometer 1206 SMT Resistor e Artwork (1 inch Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 PTB 20170 ) 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 5 Specifications subject to change without notice. L3 © 1996 Ericsson Inc. EUS/KR 1301-PTB 20170 Uen Rev. C 09-28-98