DISCRETE SEMICONDUCTORS DATA SHEET RZ1214B35Y NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor RZ1214B35Y FEATURES PINNING - SOT443A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistor providing excellent current sharing and withstanding a high VSWR 1 collector • Gold metallization realizes very stable characteristics and excellent lifetime 2 emitter 3 base connected to flange DESCRIPTION • Multicell geometry gives good balance of dissipated power and low thermal resistance • Internal input matching ensures good stability and allows an easier design of wideband circuits. handbook, halfpage 1 c APPLICATIONS b • Common base class-C wideband pulsed power amplifiers for L-band radar applications in the 1.2 to 1.4 GHz band. 3 e 2 Top view DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the base connected to the flange. MAM314 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class-C wideband amplifier. MODE OF OPERATION Class-C; tp = 150 µs; δ = 5% f (GHz) VCC (V) PL (W) Gp (dB) ηC (%) Zi; ZL (Ω) 1.2 to 1.4 50 ≥35 ≥7 ≥30 see Fig 4 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1997 Feb 18 2 Philips Semiconductors Product specification NPN microwave power transistor RZ1214B35Y LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 65 V VCEO collector-emitter voltage open base − 15 V VCES collector-emitter voltage RBE = 0 Ω − 60 V VEBO emitter-base voltage open collector − 3 V IC collector current (DC) tp ≤ 150 µs; δ ≤ 5%≤ − 3 A Ptot total power dissipation Tmb ≤ 75 °C; tp ≤ 150 µs; δ ≤ 5% − 125 W Tstg storage temperature −65 +200 °C Tj operating junction temperature − 200 °C Tsld soldering temperature − 235 °C at 0.2 mm from the case; t ≤ 10 s MGD974 150 handbook, halfpage Ptot (W) 100 50 0 0 50 100 150 200 Tmb (°C) tp = 150 µs; δ = 5%. Fig.2 1997 Feb 18 Power derating curve. 3 Philips Semiconductors Product specification NPN microwave power transistor RZ1214B35Y THERMAL CHARACTERISTICS Tj = 75 °C unless otherwise specified SYMBOL PARAMETER CONDITIONS Rth j-mb thermal resistance from junction to mounting-base Rth mb-h thermal resistance from mounting-base to heatsink note 1 Zth j-h thermal resistance from junction to heatsink tp = 100 µs; δ = 10 %; notes 1 and 2 MAX. UNIT 5 K/W 0.2 K/W 1 K/W MAX. UNIT Notes 1. See “Mounting recommendations in the General part of handbook SC19a”. 2. Equivalent thermal impedance under pulsed microwave operating conditions. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. V(BR)CBO collector-base breakdown voltage IC = 20 mA; IE = 0 65 − V V(BR)CES collector-emitter breakdown voltage IC = 20 mA; RBE = 0 60 − V V(BR)EBO emitter-base breakdown voltage IC = 0; IE = 3 mA 3 − V ICBO collector cut-off current VCB = 50 V; IE = 0 − 2 mA IEBO emitter cut-off current VEB = 1.5 V; IC = 0 − 0.2 mA APPLICATION INFORMATION The transistors are 100% tested under the following conditions MODE OF OPERATION Class-C 1997 Feb 18 f (GHz) VCC (V) PL (W) Gp (dB) ηC (%) Zi; ZL (Ω) 1.2 to 1,4 50 typ.40; >35 typ.7.8; >7 typ.35; >35 see Fig 4 tp = 300 µs; δ = 10% 1.2 to 1,4 50 typ.40; typ.7 typ.35 see Fig 4 CONDITIONS tp = 150 µs; δ = 5% 4 Philips Semiconductors Product specification NPN microwave power transistor RZ1214B35Y VCC handbook, full pagewidth ,,,,,,,,,,,,, ,,,,,,, ,,,,,, ,, ,,,,,,,,,,,,, ,, ,,,,,,,,,,,,, 11.5 7 5 5.75 5 0.59 input 0.59 19.5 output 100 pF 3 8 5 10 5.15 5 8 MGK061 3 Dimensions in mm. Substrate: Epsilam. Thickness: 0.635 mm. Permittivity: εr = 10. Fig.3 Wideband test circuit for class C operation at 1.2 to 1.4 GHz. 1 handbook, full pagewidth 0.5 2 0.2 5 Zi 1.4 GHz +j 0 0.2 0.5 1 1.2 1.3 –j 1.3 1.2 2 10 5 ∞ 10 ZL 10 1.4 GHz 5 0.2 2 0.5 1 MCD626 Class C operation; VCE = 50 V; PL = 35 W; Zo = 5 Ω; tp = 150 µs; δ = 5%. Fig.4 Input and optimum load impedances as functions of frequency; typical values. 1997 Feb 18 5 Philips Semiconductors Product specification NPN microwave power transistor RZ1214B35Y PACKAGE OUTLINE 24 max handbook, full pagewidth 0.5 Y 0.1 6.4 max 3.5 2.9 3 1.7 max seating plane Y 3.1 1 4 min 0.5 X X 10.5 max 3.4 3.2 10.5 max 23 max 0.5 X 2 MBC663 16.5 0.5 Y Dimensions in mm. Torque on screw: Max. 0.5 Nm. Recommended screw: M3. Fig.5 SOT443A. 1997 Feb 18 6 Philips Semiconductors Product specification NPN microwave power transistor RZ1214B35Y DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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