Order this document by MRF10070/D SEMICONDUCTOR TECHNICAL DATA The RF Line Designed for 1025 –1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 70 Watts Peak Gain = 9.0 dB Min 70 W (PEAK) 1025 – 1150 MHz MICROWAVE POWER TRANSISTOR NPN SILICON • 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR • Characterized with 10 µs, 10% Duty Cycle Pulses • Silicon Nitride Passivated • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Internal Input and Output Matching • Hermetically Sealed Package • Recommended Driver for MRF10500 Transistor or a Pair of MRF10350 Transistors CASE 376C–01, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCES 65 Vdc Collector–Base Voltage VCBO 65 Vdc Emitter–Base Voltage VEBO 3.5 Vdc Collector Current — Peak (1) IC 8.8 Adc Total Device Dissipation @ TC = 25°C (1), (2) Derate above 25°C PD 438 2.5 Watts W/°C Storage Temperature Range Tstg – 65 to + 200 °C TJ 200 °C Symbol Max Unit RθJC 0.4 °C/W Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (3) NOTES: 1. Under pulse RF operating conditions. 2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF amplifiers. 3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case θJC value measured @ 10 µs, 10%.) REV 6 RF DEVICE DATA MOTOROLA Motorola, Inc. 1994 MRF10070 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 60 mAdc, VBE = 0) V(BR)CES 65 — — Vdc Collector–Base Breakdown Voltage (IC = 60 mAdc, IE = 0) V(BR)CBO 65 — — Vdc Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 3.5 — — Vdc ICBO — — 25 mAdc hFE 20 — — — Common–Base Amplifier Power Gain (VCC = 50 Vdc, Pout = 70 W Peak, f = 1090 MHz) GPB 9.0 10 — dB Collector Efficiency (VCC = 50 Vdc, Pout = 70 W Peak, f = 1090 MHz) η 40 — — % Load Mismatch (VCC = 50 Vdc, Pout = 70 W Peak, f = 1090 MHz, Load VSWR = 10:1 All Phase Angles) ψ Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = 50 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) FUNCTIONAL TESTS + – + C4 Z6 C2 C3 L1 Z2 Z1 No Degradation in Output Power Before or After Test Z4 Z3 Z10 Z5 Z7 583 79 100 203 79 595 374 159 79 578 865 100 536 50 264 100 Z13 300 50 459 Z12 203 681 352 79 Z8 300 300 791 168 1100 Z9 Z1 – Z13 — Microstrip, see details below Board Material — 0.030″ Glass Teflon; 2 oz. Cu clad; both sides; ∈r = 2.55 C1 — 82 pF 100 mil Chip Capacitor C2 — 82 pF 100 mil Chip Capacitor C3 — 0.1 µF C4 — 100 µF/100 Vdc Electrolytic L1 — 3 turns #18 AWG, 1/8″ ID, 0.18″ Long 79 C1 Z11 D.U.T. 266 283 283 226 265 220 1113 1.000 Figure 1. Test Circuit MRF10070 2 MOTOROLA RF DEVICE DATA 100 Pout , OUTPUT POWER (WATTS) 90 80 70 60 50 VCC = 50 V f = 1090 MHz PULSE = 10 µs, 10% DF 40 30 20 10 2 3 4 5 6 7 8 9 10 11 12 Pin, INPUT POWER (WATTS) 13 14 15 Figure 2. Output Power versus Input Power 1025 1050 1090 1125 Zin f = 1150 MHz 1025 Zo = 10 Ω ZOL* 1125 1050 1090 f = 1150 MHz Pout = 70 W Pk VCC = 50 V f MHz ZIN OHMS ZOL* (ZOUT) OHMS 1025 3.3 + j5.8 14.3 + j5.6 1050 3.6 + j6.5 13.3 – j1.0 1090 4.0 + j6.9 11.3 – j2.1 1125 4.5 + j6.9 10.4 – j2.5 1150 5.0 + j6.9 10.2 – j2.6 ZOL* is the conjugate of the optimum load impedance into which the device operates at a given output power voltage and frequency. Figure 3. Series Equivalent Input/Output Impedances MOTOROLA RF DEVICE DATA MRF10070 3 PACKAGE DIMENSIONS Q G 2 PL 0.25 (0.010) T A M M B –B– R K D 2 PL 0.25 (0.010) F H E N M T A B M 2 PL 0.25 (0.010) –T– –A– M M T A M B M SEATING PLANE C M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H K N Q R INCHES MIN MAX 0.890 0.910 0.370 0.400 0.190 0.210 0.140 0.160 0.055 0.065 0.003 0.006 0.650 BSC 0.110 0.130 0.180 0.220 0.390 0.410 0.115 0.135 0.390 0.140 MILLIMETERS MIN MAX 22.61 23.11 9.40 10.16 4.83 5.33 3.56 4.06 1.40 1.65 0.08 0.15 16.51 BSC 2.80 3.30 4.57 5.59 9.91 10.41 2.93 3.42 9.91 10.41 STYLE 1: PIN 1. COLLECTOR 2. EMITTER 3. BASE CASE 376C–01 ISSUE O Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRF10070 4 ◊ *MRF10070/D* MRF10070/D MOTOROLA RF DEVICE DATA