Order this document by MRF321/D SEMICONDUCTOR TECHNICAL DATA The RF Line . . . designed primarily for wideband large–signal driver and predriver amplifier stages in 200 – 500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts Power Gain = 12 dB Min Efficiency = 50% Min 10 W, 400 MHz RF POWER TRANSISTOR NPN SILICON • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR • Gold Metallization System for High Reliability • Computer–Controlled Wirebonding Gives Consistent Input Impedance MAXIMUM RATINGS Symbol Value Unit Collector–Emitter Voltage Rating VCEO 33 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector Current — Continuous Collector Current — Peak IC 1.1 1.5 Adc Total Device Dissipation @ TA = 25°C (1) Derate above 25°C PD 27 160 Watts mW/°C Storage Temperature Range Tstg – 65 to +150 °C CASE 244–04, STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RθJC 6.4 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 20 mAdc, IB = 0) V(BR)CEO 33 — — Vdc Collector–Emitter Breakdown Voltage (IC = 20 mAdc, VBE = 0) V(BR)CES 60 — — Vdc Collector–Base Breakdown Voltage (IC = 20 mAdc, IE = 0) V(BR)CBO 60 — — Vdc Emitter–Base Breakdown Voltage (IE = 2.0 mAdc, IC = 0) V(BR)EBO 4.0 — — Vdc ICBO — — 1.0 mAdc hFE 20 — 80 — OFF CHARACTERISTICS Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 500 mA, VCE = 5.0 Vdc) NOTE: (continued) 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. RF DEVICE DATA MOTOROLA Motorola, Inc. 1994 MRF321 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Cob — 10 12 pF Common–Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 10 W, f = 400 MHz) GPE 12 13 — dB Collector Efficiency (VCC = 28 Vdc, Pout = 10 W, f = 400 MHz) η 50 60 — % Load Mismatch (VCC = 28 Vdc, Pout = 10 W, f = 400 MHz, VSWR = 30:1 all phase angles) ψ DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS (Figure 1) R2 No Degradation in Output Power L4 R3 + 5V – D1 R4 C9 C11 C10 + C12 – C13 + 28 V – L3 L1 C8 Z3 Z4 DUT RF INPUT Z1 Z2 L2 C5 C1 C2 RF OUTPUT C3 C6 C7 C4 R1 C1, C2, C3 — 1.0 – 20 pF Johanson Trimmer (JMC 5501) C3, C4 — 47 pF ATC Chip Capacitor C5, C10 — 0.1 µF Erie Redcap C7 — 0.5 – 10 pF Johanson Trimmer (JMC 5201) C8 — 0.018 µF Vitramon Chip Capacitor C9 — 200 pF UNELCO Capacitor C11, C12 — 680 pF Feedthru C13 — 1.0 µF, 50 Volt Tantalum Capacitor D1 — 1N4001 L1 — 0.33 µH Molded Choke with Ferroxcube Bead L1 — (Ferroxcube 56–590–65/4B) on Ground End of Coil L2 — 4 Turns #20 Enamel, 1/8″ ID L3 — 6 Turns #20 Enamel, 1/4″ ID L4 — Ferroxcube VK200–19/4B R1 — 5.1 Ω, 1/4 Watt R2 — 120 Ω, 1.0 Watt R3 — 20 Ω, 1/2 Watt R4 — 47 Ω, 1/2 Watt Z1 — Microstrip 0.1″ W x 1.35″ L Z2 — Microstrip 0.1″ W x 0.55″ L Z3 — Microstrip 0.1″ W x 0.8″ L Z4 — Microstrip 0.1″ W x 1.75″ L Board — Glass Teflon, εR = 2.56, t = 0.062″ Input/Output Connectors — Type N Figure 1. 400 MHz Test Circuit Schematic MRF321 2 MOTOROLA RF DEVICE DATA 12 12 400 10 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) f = 200 MHz Pin = 1 W 8 0.7 W 6 0.5 W 0.4 W 4 0.3 W VCC = 28 V 2 100 200 0.1 W 300 400 6 4 0 300 600 900 1200 1500 f, FREQUENCY (MHz) Pin, INPUT POWER (mW) Figure 2. Output Power versus Frequency Figure 3. Output Power versus Input Power 22 G PE , COMMON EMITTER AMPLIFIER POWER GAIN (dB) Pout , OUTPUT POWER (WATTS) 8 2 600 12 10 Pin = 0.5 W 8 0.35 W 6 4 f = 400 MHz 2 10 10 VCC = 28 V 0.2 W 500 500 14 18 22 26 VCC, SUPPLY VOLTAGE (VOLTS) Figure 4. Output Power versus Supply Voltage MOTOROLA RF DEVICE DATA 30 Po = 10 W VCC = 28 V 18 14 10 6 2 200 300 400 500 f, FREQUENCY (MHz) Figure 5. Power Gain versus Frequency MRF321 3 0 –5 400 5 f = 200 MHz Zin – 10 Po = 10 W, VCC = 28 V f MHz Zin Ohms ZOL* Ohms 200 400 500 0.68 – j0.75 0.89 + j2.7 1.3 + j4.3 14.2 – j22 9.8 – j14.4 9.3 – j13 500 5 10 500 400 15 ZOL* 20 f = 200 MHz 25 ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, ZOL* = voltage and frequency. Figure 6. Series Equivalent Impedance MRF321 4 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS 2 3 D 1 4 K M T F A J SEATING PLANE U P S C 8–32 NC 2A WRENCH FLAT E DIM A B C D E G J K M P S T U STYLE 1: PIN 1. 2. 3. 4. B MILLIMETERS MIN MAX 7.06 7.26 6.20 6.50 14.99 16.51 5.46 5.96 1.40 1.65 1.52 ––– 0.08 0.17 11.05 ––– 45_NOM ––– 1.27 3.00 3.25 1.40 1.77 2.92 3.68 INCHES MIN MAX 0.278 0.286 0.244 0.256 0.590 0.650 0.215 0.235 0.055 0.065 0.060 ––– 0.003 0.007 0.435 ––– 45 _NOM ––– 0.050 0.118 0.128 0.055 0.070 0.115 0.145 EMITTER BASE EMITTER COLLECTOR CASE 244–04 ISSUE J MOTOROLA RF DEVICE DATA MRF321 5 Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRF321 6 ◊ *MRF321/D* MRF321/D MOTOROLA RF DEVICE DATA