Order this document by MRF429/D SEMICONDUCTOR TECHNICAL DATA The RF Line Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. • Specified 50 Volt, 30 MHz Characteristics — Output Power = 150 W (PEP) Minimum Gain = 13 dB Efficiency = 45% 150 W (LINEAR), 30 MHz RF POWER TRANSISTOR NPN SILICON • Intermodulation Distortion @ 150 W (PEP) — IMD = – 32 dB (Max) • Diffused Emitter Resistors for Superior Ruggedness • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR @ 150 W CW CASE 211–11, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 50 Vdc Collector–Base Voltage VCBO 100 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector Current — Continuous IC 16 Adc Withstand Current — 10 s — 20 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 233 1.33 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C Symbol Max Unit RθJC 0.75 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0) V(BR)CEO 50 — — Vdc Collector–Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) V(BR)CES 100 — — Vdc Collector–Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 100 — — Vdc Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 4.0 — — Vdc Characteristic OFF CHARACTERISTICS (continued) RF DEVICE DATA MOTOROLA Motorola, Inc. 1994 MRF429 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit hFE 10 30 80 — Cob — 220 300 pF Common–Emitter Amplifier Gain (VCC = 50 Vdc, Pout = 150 W (PEP), IC(max) = 3.32 Adc, f = 30; 30.001 MHz) GPE 13 15 — dB Output Power (VCE = 50 Vdc, f = 30; 30.001 MHz) Pout 150 — — W (PEP) η 45 — — % IMD — – 35 – 32 dB ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 50 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS Collector Efficiency (VCC = 50 Vdc, Pout = 150 W (PEP), IC(max) = 3.32 Adc, f = 30, 30.001 MHz) Intermodulation Distortion (1) (VCE = 50 Vdc, Pout = 150 W (PEP), IC = 3.32 Adc) ψ Electrical Ruggedness (VCC = 50 Vdc, Pout = 150 W CW, f = 30 MHz, VSWR 30:1 at all Phase Angles) No Degradation in Output Power NOTE: 1. To Mil–Std–1311 Version A, Test Method 2204, Two Tone, Reference each Tone. L5 R1 + + BIAS + C3 C4 CR1 C8 – – DUT RF INPUT C10 L3 L2 C2 C9 50 Vdc – L4 RF OUTPUT L1 C6 R3 C1 C5 R2 C1, C2, C7 — 170 – 780 pF, Arco 469 C3, C8, C9 — 0.1 µF, 100 V Erie C4 — 500 µF @ 6.0 V C5 — 9.0 – 180 pF, Arco 463 C6 — 80 – 480 pF, Arco 466 C10 — 30 µF, 100 V R1 — 10 Ω, 10 Watt C7 R2 — 10 Ω, 1.0 Watt R3 — 5.0 – 3.3 Ω 1/2 Watt Carbon Resistors in Parallel CR1 — 1N4997 L1 — 3 Turns, #16 Wire, 5/16″ I.D., 5/16″ Long L2 — 10 µH Molded Choke L3 — 12 Turns, #16 Enameled Wire Closewound, 1/4″ I.D. L4 — 5 Turns, 1/8″ Copper Tubing, 9/16″ I.D., 3/4″ Long L5 — 10 Ferrite Beads — Ferroxcube #56–590–65/3B Figure 1. 30 MHz Test Circuit Schematic MRF429 2 MOTOROLA RF DEVICE DATA 250 f = 30 MHz ICQ = 150 mA 200 Pout , OUTPUT POWER (WATTS PEP) Pout , OUTPUT POWER (WATTS CW) 250 VCC = 50 V 40 V 150 28 V 100 50 0 0 2 4 6 Pin, INPUT POWER (WATTS) 8 200 – 35 dB 100 50 20 30 350 25 300 20 VCC = 50 V ICQ = 150 mA Pout = 150 W 10 30 40 50 VCC, SUPPLY VOLTAGE (VOLTS) 60 Figure 3. Output Power versus Supply Voltage Pout , (WATTS CW) G PE , POWER GAIN (dB) Figure 2. Output Power versus Input Power 15 IMD = – 30 dB 150 0 10 f = 30, 30.001 MHz ICQ = 150 mA IMD = d3 f = 30.000 MHz ICQ = 150 mA VCC = 50 V 250 200 TC = 50°C 150 100°C 0 1 2 4 7 15 f, FREQUENCY (MHz) 30 60 100 100 1 Figure 4. Power Gain versus Frequency IMD, INTERMODULATION DISTORTION (dB) VCC = 30 V 200 f T (MHz) 15 V 150 100 50 0 10 5 IC, COLLECTOR CURRENT (AMPS) Figure 6. fT versus Collector Current MOTOROLA RF DEVICE DATA 10 30 50 OUTPUT VSWR Figure 5. RF Safe Operating Area (SOAR) 250 0 5 3 14 – 25 – 30 VCC = 50 V f = 30, 30.001 MHz d3 – 35 d5 – 40 – 45 – 50 0 20 40 60 80 100 120 Pout, OUTPUT POWER (WATTS PEP) 140 160 Figure 7. IMD versus Pout MRF429 3 20 VCC = 50 V ICQ = 150 mA Pout = 150 W PEP 4000 Rout , PARALLEL EQUIVALENT OUTPUT RESISTANCE (OHMS) Cout , PARALLEL EQUIVALENT OUTPUT CAPACITANCE (pF) 5000 3000 2000 1000 0 1 2 4 7 15 f, FREQUENCY (MHz) 30 60 16 12 8 4 0 100 Figure 8. Output Capacitance versus Frequency VCC = 50 V ICQ = 150 mA Pout = 150 W PEP 1 2 4 7 15 f, FREQUENCY (MHz) 30 60 100 Figure 9. Output Resistance versus Frequency 90 60 30 15 7.0 4.0 VCC = 50 V ICQ = 150 mA Pout = 150 W PEP f MHz Zin Ohms 2.0 4.0 7.0 15 30 60 90 7.15 – j2.40 4.20 – j2.25 2.55 – j1.75 1.60 – j1.15 1.10 – j0.70 0.78 – j0.30 0.67 – j0.10 f = 2.0 MHz Zo = 10 Ω Figure 10. Series Equivalent Impedance MRF429 4 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS A U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. M 1 M Q DIM A B C D E H J K M Q R U 4 R 2 B 3 D K J H C E SEATING PLANE STYLE 1: PIN 1. 2. 3. 4. INCHES MIN MAX 0.960 0.990 0.465 0.510 0.229 0.275 0.216 0.235 0.084 0.110 0.144 0.178 0.003 0.007 0.435 ––– 45 _NOM 0.115 0.130 0.246 0.255 0.720 0.730 MILLIMETERS MIN MAX 24.39 25.14 11.82 12.95 5.82 6.98 5.49 5.96 2.14 2.79 3.66 4.52 0.08 0.17 11.05 ––– 45 _NOM 2.93 3.30 6.25 6.47 18.29 18.54 EMITTER BASE EMITTER COLLECTOR CASE 211–11 ISSUE N MOTOROLA RF DEVICE DATA MRF429 5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 MRF429 6 ◊ *MRF429/D* MRF429/D MOTOROLA RF DEVICE DATA