Order this document by MRF448/D SEMICONDUCTOR TECHNICAL DATA The RF Line Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. • Specified 50 Volt, 30 MHz Characteristics Output Power = 250 W Minimum Gain = 12 dB Efficiency = 45% 250 W, 30 MHz RF POWER TRANSISTOR NPN SILICON • Intermodulation Distortion @ 250 W (PEP) — IMD = – 30 dB (Max) • 100% Tested for Load Mismatch at all Phase Angles with 3:1 VSWR CASE 211–11, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 50 Vdc Collector–Base Voltage VCBO 100 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector Current — Continuous IC 16 Adc Withstand Current — 10 s — 20 Adc Total Device Dissipation @ TC = 25°C (1) Derate above 25°C PD 290 1.67 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C Symbol Max Unit RθJC 0.6 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0) V(BR)CEO 50 — — Vdc Collector–Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) V(BR)CES 100 — — Vdc Collector–Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 100 — — Vdc Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 4.0 — — OFF CHARACTERISTICS NOTE: 1. PD is a measurement reflecting short term maximum condition. See SOAR curve for operating conditions. RF DEVICE DATA MOTOROLA Motorola, Inc. 1994 Vdc (continued) MRF448 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit hFE 10 30 — — Cob — 350 450 pF GPE 12 14 — dB η — — 45 65 — — % (PEP) % (CW) IMD — – 33 – 30 dB ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 10 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 50 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS Common–Emitter Amplifier Power Gain (VCC = 50 Vdc, Pout = 250 W CW, f = 30 MHz, ICQ = 250 mA) Collector Efficiency (VCC = 50 Vdc, Pout = 250 W, f = 30 MHz, ICQ = 250 mA) Intermodulation Distortion (2) (VCE = 50 Vdc, Pout = 250 W (PEP), ICQ = 250 mA, f = 30 MHz) ψ Electrical Ruggedness (VCC = 50 Vdc, Pout = 250 W CW, f = 30 MHz, VSWR 3:1 at all Phase Angles) No Degradation in Output Power NOTE: 2. To Mil–Std–1311 Version A, Test Method 2204, Two Tone, Reference each Tone. L5 R1 L6 + BIAS + C3 C4 + CR1 C8 C9 + C10 L3 – L2 D.U.T. L4 RF OUTPUT L1 RF INPUT 50 Vdc – – C2 C1 C5 R2 C7 C6 C1, C2, C5, C7 — 170– 780 pF, Arco 469 C3, C8, C9 — 0.1 µF, 100 V Erie C4 — 500 µF @ 6.0 V C6 — 360 pF, 3 x 120 pF 3.0 kV in parallel C10 — 10 µF, 100 V R1 — 10 Ω, 10 Watt R2 — 10 Ω, 1.0 Watt CR1 — 1N4997 or equivalent L1 — 3 Turns, #16 Wire, 0.4″ I.D., 0.3″ Long L2 — 0.8 µH, Ohmite Z–235 or equivalent L3 — 12 Turns, #16 Enameled Wire Closewound 0.25″ I.D. L4 — 4 Turns, 1/8″ Copper Tubing, 0.6″ I.D., 1.0″ Long L5, L6 — 2.0 µH, Fair–Rite 2643021801 Ferrite bead each or equivalent Figure 1. 30 MHz Test Circuit Schematic MRF448 2 MOTOROLA RF DEVICE DATA 400 f = 30 MHz ICQ = 250 mA 300 Pout , OUTPUT POWER (WATTS PEP) Pout , OUTPUT POWER (WATTS CW) 400 VCC = 50 V 40 V 200 100 0 0 4 8 12 Pin, INPUT POWER (WATTS) 16 f = 30, 30.001 MHz ICQ = 250 mA IMD = d3 300 – 35 dB 200 100 0 20 20 Figure 2. Output Power versus Input Power Pout , OUTPUT POWER (WATTS CW) 15 10 VCC = 50 V ICQ = 250 mA Pout = 250 W 5 0 2 4 7 10 f, FREQUENCY (MHz) 15 350 300 250 TC = 50°C 200 100°C 150 30 f = 30 MHz ICQ = 250 mA VCC = 50 V 1 3 Figure 4. Power Gain versus Frequency IMD, INTERMODULATION DISTORTION (dB) VCC = 30 V 200 15 V 150 100 50 0 10 15 5 IC, COLLECTOR CURRENT (AMPS) Figure 6. fT versus Collector Current MOTOROLA RF DEVICE DATA 5 10 30 50 OUTPUT VSWR Figure 5. RF SOAR (Class AB) Pout versus Output VSWR 250 f T (MHz) 60 400 20 G PE , POWER GAIN (dB) 30 40 50 VCC, SUPPLY VOLTAGE (VOLTS) Figure 3. Output Power versus Supply Voltage 25 0 IMD = – 30 dB 20 – 25 VCC = 50 V f = 30, 30.001 MHz – 30 d3 – 35 – 40 d5 – 45 – 50 25 75 125 175 225 275 Pout, OUTPUT POWER (WATTS PEP) Figure 7. IMD versus Pout MRF448 3 5000 CP VCC = 50 V ICQ = 250 mA Pout = 250 W PEP 16 4000 12 3000 RP 8 2000 4 1000 0 1.5 2 4 7 10 f, FREQUENCY (MHz) 15 Cout , PARALLEL EQUIVALENT OUTPUT CAPACITANCE (pF) Rout , PARALLEL EQUIVALENT OUTPUT RESISTANCE (OHMS) 20 0 30 20 Figure 8. Output Resistance and Capacitance versus Frequency VCC = 50 V ICQ = 150 mA Pout = 250 W PEP 30 15 7.0 Zo = 10 Ω 4.0 f = 2.0 MHz f MHz Zin Ohms 2.0 4.0 7.0 15 30 4.50 – j1.40 3.10 – j1.80 1.70 – j1.75 0.80 – j1.25 0.60 – j0.75 Figure 9. Series Equivalent Impedance MRF448 4 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS A U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. M 1 M Q DIM A B C D E H J K M Q R U 4 R 2 B 3 D K J H C E SEATING PLANE STYLE 1: PIN 1. 2. 3. 4. INCHES MIN MAX 0.960 0.990 0.465 0.510 0.229 0.275 0.216 0.235 0.084 0.110 0.144 0.178 0.003 0.007 0.435 ––– 45 _NOM 0.115 0.130 0.246 0.255 0.720 0.730 MILLIMETERS MIN MAX 24.39 25.14 11.82 12.95 5.82 6.98 5.49 5.96 2.14 2.79 3.66 4.52 0.08 0.17 11.05 ––– 45 _NOM 2.93 3.30 6.25 6.47 18.29 18.54 EMITTER BASE EMITTER COLLECTOR CASE 211–11 ISSUE N MOTOROLA RF DEVICE DATA MRF448 5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 MRF448 6 ◊ *MRF448/D* MRF448/D MOTOROLA RF DEVICE DATA