MMBD914 CONNECTION DIAGRAM 3 3 3 5D 2 SOT-23 1 2 2 NC 1 1 High Conductance Ultra Fast Diode Sourced from Process 1P. See 1N4148 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units 75 V W IV Working Inverse Voltage IO Average Rectified Current 200 mA IF DC Forward Current 600 mA if Recurrent Peak Forward Current 700 mA if(surge) Tstg Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond Storage Temperature Range 1.0 2.0 -55 to +150 A A °C TJ Operating Junction Temperature 150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max Units MMBD914* 350 2.8 357 mW mW/°C °C/W *Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2 1997 Fairchild Semiconductor Corporation MMBD914 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions I R = 100 µA I R = 5.0 µA VR = 20 V VR = 20 V, TA = 150°C VR = 75 V I F = 10 mA Min Max Units 25 50 5.0 1.0 V V nA µA µA V BV Breakdown Voltage 100 75 IR Reverse Current VF Forward Voltage CO Diode Capacitance VR = 0, f = 1.0 MHz 4.0 pF TRR Reverse Recovery Time 4.0 nS VFM Peak Forward Recovery Voltage I F = 10 mA, VR = 6.0 V, I RR = 1.0 mA, RL = 100Ω I F = 50 mA PEAK SQUARE WAVE PULSE WIDTH = 0.1 µS 5 kHz - 100 kHz REP RATE 2.5 v MMBD914 High Conductance Ultra Fast Diode