Order this document by MRF325/D SEMICONDUCTOR TECHNICAL DATA The RF Line . . . designed primarily for wideband large–signal output and driver amplifier stages in 100 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 30 Watts Minimum Gain = 8.5 dB Efficiency = 54% (Min) 30 W, 225 to 400 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON • Built–In Matching Network for Broadband Operation Using Internal Matching Techniques • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR • Gold Metallization for High Reliability Applications MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 33 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector Current — Continuous Collector Current — Peak IC 3.4 4.5 Adc Total Device Dissipation @ TC = 25°C (1) Derate above 25°C PD 82 0.47 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C CASE 316–01, STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RθJC 2.13 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 30 mAdc, IB = 0) V(BR)CEO 33 — — Vdc Collector–Emitter Breakdown Voltage (IC = 30 mAdc, VBE = 0) V(BR)CES 60 — — Vdc Emitter–Base Breakdown Voltage (IE = 3.0 mAdc, IC = 0) V(BR)EBO 4.0 — — Vdc Collector–Base Breakdown Voltage (IC = 30 mAdc, IE = 0) V(BR)CBO 60 — — Vdc ICBO — — 3.0 mAdc hFE 20 — 80 — Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 1.5 Adc, VCE = 5.0 Vdc) NOTE: (continued) 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. RF DEVICE DATA MOTOROLA Motorola, Inc. 1994 MRF325 2–1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Cob — 30 40 pF Common–Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 30 W, f = 400 MHz) GPE 8.5 9.5 — dB Collector Efficiency (VCC = 28 Vdc, Pout = 30 W, f = 400 MHz) η 50 60 — % Load Mismatch (VCC = 28 Vdc, Pout = 30 W, f = 400 MHz, VSWR = 30:1 all angles) ψ DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS (Figure 1) No Degradation in Output Power L3 C11 C14 + + C10 C12 – L1 C13 +V CC 28 Vdc – L2 C8 DUT RF OUTPUT Z3 C2 RF INPUT Z1 Z2 C6 C1 C3 C4 C7 C9 C5 C1, C9 — 1.0 – 10 pF Johanson Capacitor (JMC 5201) C2, C3, C6, C7 — 1.0– 20 pF Johanson Capacitor (JMC 5501) C4, C5 — 36 pF ATC 100–mil Chip Capacitor C8 — 100 pF UNELCO C10, C13 — 1.0 µF 50 V Tantalum C11, C14 — 680 pF Feedthru C12 — 0.1 µF Erie Redcap L1 — 8 Turns #26 AWG Enameled, 1/16″ ID Closewound L1 — with Ferroxcube Bead (#56–590–65/4B) on Ground End L2 — 14 Turns, #22 AWG Enameled, Closewound on a 470 Ω, L2 — 2.0 Watt Resistor with Ferroxcube Bead (#56–590–65/4B) L2 — on Cold End of L2 L3 — Ferroxcube VK200–19/4B Ferrite Choke Z1 — Microstrip 0.19″ W x 0.88″ L Z2 — Microstrip 0.28″ W x 1.0″ L Z3 — Microstrip 0.31″ W x 1.25″ L Board — Glass Teflon εr = 2.56, t = 0.062″ Input/Output Connectors — Type N DUT Socket Lead Frame Etched from 80–mil–Thick Copper Figure 1. 400 MHz Test Circuit MRF325 2–2 MOTOROLA RF DEVICE DATA Pout , OUTPUT POWER (WATTS) 50 40 f = 225 MHz 30 400 MHz 20 10 VCC = 28 Vdc 0 1 0 2 3 4 5 Pin, INPUT POWER (WATTS) Figure 2. Output Power versus Input Power 50 Pin = 1.7 W 40 30 1W 20 0.6 W 10 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 50 40 Pin = 4 W 30 3W 20 2W 10 f = 225 MHz 0 10 14 18 22 26 f = 400 MHz 30 0 10 14 18 22 26 30 VCC, SUPPLY VOLTAGE (VOLTS) VCC, SUPPLY VOLTAGE (VOLTS) Figure 3. Output Power versus Supply Voltage Figure 4. Output Power versus Supply Voltage MOTOROLA RF DEVICE DATA MRF325 2–3 0 –5 5 f = 225 MHz Zin – 10 ZOL* f = 225 MHz 400 10 5 400 Pout = 30 W, VCC = 28 V 10 f MHz Zin Ohms ZOL* Ohms 225 400 0.4 + j1.6 1.0 + j3.9 4.9 – j5.5 5.5 – j2.4 ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, ZOL* = voltage and frequency. Figure 5. Series Equivalent Impedance MRF325 2–4 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS F D 4 R NOTES: 1. FLANGE IS ISOLATED IN ALL STYLES. K 3 DIM A B C D E F H J K L N Q R U 1 Q 2 L B J C E N INCHES MIN MAX 24.38 25.14 12.45 12.95 5.97 7.62 5.33 5.58 2.16 3.04 5.08 5.33 18.29 18.54 0.10 0.15 10.29 11.17 3.81 4.06 3.81 4.31 2.92 3.30 3.05 3.30 11.94 12.57 MILLIMETERS MIN MAX 0.960 0.990 0.490 0.510 0.235 0.300 0.210 0.220 0.085 0.120 0.200 0.210 0.720 0.730 0.004 0.006 0.405 0.440 0.150 0.160 0.150 0.170 0.115 0.130 0.120 0.130 0.470 0.495 H A U STYLE 1: PIN 1. 2. 3. 4. EMITTER COLLECTOR EMITTER BASE CASE 316–01 ISSUE D MOTOROLA RF DEVICE DATA MRF325 2–5 Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRF325 2–6 ◊ *MRF325/D* MRF325/D MOTOROLA RF DEVICE DATA