Order this document by MRF313/D SEMICONDUCTOR TECHNICAL DATA The RF Line . . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 1.0 Watt Power Gain = 15 dB Min Efficiency = 45% Typ 1.0 W, 400 MHz HIGH–FREQUENCY TRANSISTOR NPN SILICON • Emitter Ballast and Low Current Density for Improved MTBF • Common Emitter for Improved Stability CASE 305A–01, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 30 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Collector Current — Continuous IC 150 mAdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 6.1 35 Watts mW/°C Storage Temperature Range Tstg – 65 to +150 °C Symbol Max Unit RθJC 28.5 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 30 — — Vdc Collector–Emitter Breakdown Voltage (IC = 5.0 mAdc, VBE = 0) V(BR)CES 35 — — Vdc Collector–Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO 35 — — Vdc Emitter–Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) V(BR)EBO 3.0 — — Vdc ICEO — — 1.0 mAdc Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCE = 20 Vdc, IB = 0) (continued) RF DEVICE DATA MOTOROLA Motorola, Inc. 1994 MRF313 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit hFE 20 60 150 — fT — 2.5 — GHz Cob — 3.5 5.0 pF Common–Emitter Amplifier Power Gain (1) (VCC = 28 Vdc, Pout = 1.0 W, f = 400 MHz) Gpe 15 16 — dB Collector Efficiency (VCC = 28 Vdc, Pout = 1.0 W, f = 400 MHz) η — 45 — % Series Equivalent Input Impedance (VCC = 28 Vdc, Pout = 1.0 W, f = 400 MHz) Zin — 6.4 – j4.8 — Ohms Series Equivalent Output Impedance (VCC = 28 Vdc, Pout = 1.0 W, f = 400 MHz) Zout — 75 – j45 — Ohms ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 10 Vdc) DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 100 mAdc, VCE = 20 Vdc, f = 200 MHz) Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS NOTE: 1. Class C L4 C7 C8 + + C6 + 28 V – C9 L3 C5 RF INPUT Z1 RF OUTPUT Z3 Z2 C2 DUT L1 C1 C3 L2 C4 R C1, C2, C4 — 1.0 – 20 pF JOHANSON 9063 C3 — 1.0 – 10 pF JOHANSON C5 — 150 pF Chip C6 — 0.1 µF C7, C8 — 680 pF Feedthru C9 — 1.0 µF TANTALUM L1, L3 — 5 Turns, AWG #20, 1/4″ I.D. L2 — Ferrite Bead, FERROXCUBE L2 — No. 56–590–65/4B L4 — FERROXCUBE VK200–20/4B L4 — Input/Output Connectors — Type N Board — Glass Teflon, ε = 2.56, t = 0.062″ R — 4.7 Ohms, 1/4 W Z1 — 2.0″ x 0.1″ MICROSTRIP LINE Z2, Z3 — 2.6″ x 0.1″ MICROSTRIP LINE Figure 1. 400 MHz Power Gain Test Circuit MRF313 2 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS M D K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A C D F H J K M 4 1 3 2 F J STYLE 1: PIN 1. 2. 3. 4. A C INCHES MIN MAX 0.200 0.220 0.095 0.130 0.055 0.065 0.025 0.035 0.040 0.050 0.003 0.007 0.435 ––– 45 _REF MILLIMETERS MIN MAX 5.08 5.59 2.41 3.30 1.40 1.65 0.64 0.89 1.02 1.27 0.08 0.18 11.05 ––– 45 _REF EMITTER BASE EMITTER COLLECTOR H CASE 305A–01 ISSUE A MOTOROLA RF DEVICE DATA MRF313 3 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRF313 4 ◊ *MRF313/D* MRF313/D MOTOROLA RF DEVICE DATA