DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1808 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA1808 is a switching device, which can be driven directly by a 4.0 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as DC/DC converters and power management of notebook computers and so on. PACKAGE DRAWING (Unit: mm) 8 5 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain 1.2 MAX. 1.0 ±0.05 0.25 FEATURES • 4.0 V drive available Low on-state resistance RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 5.0 A) RDS(on)2 = 23 mΩ MAX. (VGS = 4.5 V, ID = 5.0 A) RDS(on)3 = 26 mΩ MAX. (VGS = 4.0 V, ID = 5.0 A) Built-in G-S protection diode against ESD 0.1 ±0.05 1 4 ORDERING INFORMATION PART NUMBER PACKAGE µPA1808GR-9JG Power TSSOP8 0.65 0.27 +0.03 –0.08 Drain to Source Voltage (VGS = 0 V) VDSS 30 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V ID(DC) ±9.5 A ID(pulse) ±38 A PT 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Drain Current (pulse) Note1 Total Power Dissipation Note2 4.4 ±0.1 1.0 ±0.2 0.1 0.8 MAX. 0.10 M EQUIVALENT CIRCUIT ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain Current (DC) (TA = 25°C) 0.5 0.6 +0.15 –0.1 6.4 ±0.2 3.15 ±0.15 3.0 ±0.1 0.145 ±0.055 • • 3° +5° –3° Drain Body Diode Gate Gate Protection Diode Source Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2 2. Mounted on ceramic substrate of 5000 mm x 1.1 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G16250EJ1V0DS00 (1st edition) Date Published August 2002 NS CP(K) Printed in Japan © 2002 µPA1808 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1.0 µA Gate Leakage Current IGSS VGS = ±18 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1.0 mA 1.5 1.9 2.5 V | yfs | VDS = 10 V, ID = 5.0 A 5.0 10.5 RDS(on)1 VGS = 10 V, ID = 5.0 A 13.5 17 mΩ RDS(on)2 VGS = 4.5 V, ID = 5.0 A 17 23 mΩ RDS(on)3 VGS = 4.0 V, ID = 5.0 A 19 26 mΩ Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance S Input Capacitance Ciss VDS = 10 V 660 pF Output Capacitance Coss VGS = 0 V 280 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 100 pF Turn-on Delay Time td(on) VDD = 15 V, ID = 5.0 A 13.5 ns tr VGS = 10 V 5.6 ns td(off) RG = 10 Ω 38 ns 7.9 ns Rise Time Turn-off Delay Time Fall Time tf Total Gate Charge QG VDD = 24 V 13 nC Gate to Source Charge QGS VGS = 10 V 1.8 nC Gate to Drain Charge QGD ID = 9.5 A 3.7 nC VF(S-D) IF = 9.5 A, VGS = 0 V 0.84 V Reverse Recovery Time trr IF = 9.5 A, VGS = 0 V 27 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 19 nC Body Diode Forward Voltage TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL RG PG. VGS VGS Wave Form 0 PG. 90% 90% ID VGS 0 ID 10% 0 10% Wave Form τ τ = 1 µs Duty Cycle ≤ 1% tr td(off) td(on) ton RL 50 Ω VDD 90% VDD ID 2 VGS 10% IG = 2 mA tf toff Data Sheet G16250EJ1V0DS µPA1808 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2.5 100 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 80 60 40 20 Mounted on ceramic 2 substrate of 5000 mm x 1.1 mm 2 Mounted on FR-4 board 2 of 2500 mm x 1.6 mm 1.5 1 0.5 0 0 0 25 50 75 100 125 150 175 0 TA - Ambient Temperature - °C 25 50 75 100 125 150 175 TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 ID(pulse) 10 ms ID(DC) 10 100 ms 1 R DS(on) Lim ited (V GS = 10 V) DC 0.1 Single pulse M ounted on ceram ic substrate 2 of 5000 m m x 1.1 m m 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transient Thermal Resistance - °C/W ID - Drain Current - A PW = 1 m s Single pulse Mounted on FR-4 board of 2 2500 mm x 1.6 mm 125°C/W 100 Mounted on ceramic 2 substrate of 5000 mm x 1.1 mm 62.5°C/W 10 1 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet G16250EJ1V0DS 3 µPA1808 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 40 V GS = 10 V FORWARD TRANSFER CHARACTERISTICS 10 0 4.5 V 4.0 V V D S = 10 V P u lse d 10 ID - Drain Current - A ID - Drain Current - A 30 20 10 1 T A = 125°C 75°C 25°C − 25°C 0.1 0.01 0.001 Pulsed 0 0.000 1 0 0.4 0.8 1.2 1.6 2 1 VDS - Drain to Source Voltage - V 3 3.5 4 100 2.2 | yfs | - Forward Transfer Admittance - S V DS = 10 V ID = 1.0 mA 2.0 1.8 1.6 1.4 1.2 -50 0 50 100 150 V DS = 10 V Pulsed 10 T A = −25°C 25°C 75°C 125°C 1 0.1 0.01 0.1 Tch - Channel Temperature - °C ID = 5.0 A Pulsed V GS = 4.0 V 4.5 V 20 10 V 10 0 -50 0 50 100 10 100 150 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ 40 30 1 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - mΩ 2.5 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 2.4 40 I D = 5 .0 A P u ls e d 30 20 10 Tch - Channel Temperature - °C 4 2 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate Cut-off Voltage - V 1.5 0 0 2 4 6 8 VGS - Gate to Source Voltage - V Data Sheet G16250EJ1V0DS 10 µPA1808 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1000 40 P u ls e d 30 C is s Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT V G S = 4 .0 V 4 .5 V 10 V 20 10 C oss 100 C rs s VGS = 0 V f = 1 .0 M H z 10 0 0 .0 1 0 .1 1 10 0 .1 100 ID - Drain Current - A 10 100 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS SOURCE TO DRAIN DIODE FORWARD VOLTAGE 10000 100 V D D = 15 V V G S = 10 V R G = 10 Ω 1000 IF - Diode Forward Current - A td(on), tr, td(off), tf - Switching Time - ns 1 tf 100 t d(off) t d(on) 10 tr 1 0.01 V GS = 0 V Pulsed 10 1 0.1 0.01 0.1 1 10 100 ID - Drain Current - A 0.4 0.6 0.8 1 1.2 VF(S-D) - Source to Drain Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS 10 VGS - Gate to Source Voltage - V ID = 9.5 A 8 VDD = 24 V 15 V 6.0 V 6 4 2 0 0 5 10 15 QG - Gate Charge - nC Data Sheet G16250EJ1V0DS 5 µPA1808 • The information in this document is current as of August, 2002. 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