NEC UPA1808

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA1808
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µPA1808 is a switching device, which can be driven
directly by a 4.0 V power source.
This device features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as DC/DC converters and power
management of notebook computers and so on.
PACKAGE DRAWING (Unit: mm)
8
5
1, 2, 3 : Source
4
: Gate
5, 6, 7, 8: Drain
1.2 MAX.
1.0 ±0.05
0.25
FEATURES
•
4.0 V drive available
Low on-state resistance
RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 5.0 A)
RDS(on)2 = 23 mΩ MAX. (VGS = 4.5 V, ID = 5.0 A)
RDS(on)3 = 26 mΩ MAX. (VGS = 4.0 V, ID = 5.0 A)
Built-in G-S protection diode against ESD
0.1 ±0.05
1
4
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1808GR-9JG
Power TSSOP8
0.65
0.27 +0.03
–0.08
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
ID(DC)
±9.5
A
ID(pulse)
±38
A
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−55 to +150
°C
Drain Current (pulse)
Note1
Total Power Dissipation
Note2
4.4 ±0.1
1.0 ±0.2
0.1
0.8 MAX.
0.10 M
EQUIVALENT CIRCUIT
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain Current (DC) (TA = 25°C)
0.5
0.6 +0.15
–0.1
6.4 ±0.2
3.15 ±0.15
3.0 ±0.1
0.145 ±0.055
•
•
3° +5°
–3°
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2
2. Mounted on ceramic substrate of 5000 mm x 1.1 mm
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G16250EJ1V0DS00 (1st edition)
Date Published August 2002 NS CP(K)
Printed in Japan
©
2002
µPA1808
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
1.0
µA
Gate Leakage Current
IGSS
VGS = ±18 V, VDS = 0 V
±10
µA
VGS(off)
VDS = 10 V, ID = 1.0 mA
1.5
1.9
2.5
V
| yfs |
VDS = 10 V, ID = 5.0 A
5.0
10.5
RDS(on)1
VGS = 10 V, ID = 5.0 A
13.5
17
mΩ
RDS(on)2
VGS = 4.5 V, ID = 5.0 A
17
23
mΩ
RDS(on)3
VGS = 4.0 V, ID = 5.0 A
19
26
mΩ
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
S
Input Capacitance
Ciss
VDS = 10 V
660
pF
Output Capacitance
Coss
VGS = 0 V
280
pF
Reverse Transfer Capacitance
Crss
f = 1.0 MHz
100
pF
Turn-on Delay Time
td(on)
VDD = 15 V, ID = 5.0 A
13.5
ns
tr
VGS = 10 V
5.6
ns
td(off)
RG = 10 Ω
38
ns
7.9
ns
Rise Time
Turn-off Delay Time
Fall Time
tf
Total Gate Charge
QG
VDD = 24 V
13
nC
Gate to Source Charge
QGS
VGS = 10 V
1.8
nC
Gate to Drain Charge
QGD
ID = 9.5 A
3.7
nC
VF(S-D)
IF = 9.5 A, VGS = 0 V
0.84
V
Reverse Recovery Time
trr
IF = 9.5 A, VGS = 0 V
27
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/µs
19
nC
Body Diode Forward Voltage
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
RL
RG
PG.
VGS
VGS
Wave Form
0
PG.
90%
90%
ID
VGS
0
ID
10%
0 10%
Wave Form
τ
τ = 1 µs
Duty Cycle ≤ 1%
tr td(off)
td(on)
ton
RL
50 Ω
VDD
90%
VDD
ID
2
VGS
10%
IG = 2 mA
tf
toff
Data Sheet G16250EJ1V0DS
µPA1808
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2.5
100
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
120
80
60
40
20
Mounted on ceramic
2
substrate of 5000 mm x 1.1 mm
2
Mounted on FR-4 board
2
of 2500 mm x 1.6 mm
1.5
1
0.5
0
0
0
25
50
75
100
125
150
175
0
TA - Ambient Temperature - °C
25
50
75
100
125
150
175
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
ID(pulse)
10 ms
ID(DC)
10
100 ms
1
R DS(on) Lim ited
(V GS = 10 V)
DC
0.1
Single pulse
M ounted on ceram ic substrate
2
of 5000 m m x 1.1 m m
0.01
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(ch-A) - Transient Thermal Resistance - °C/W
ID - Drain Current - A
PW = 1 m s
Single pulse
Mounted on FR-4 board of
2
2500 mm x 1.6 mm
125°C/W
100
Mounted on ceramic
2
substrate of 5000 mm x 1.1 mm
62.5°C/W
10
1
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet G16250EJ1V0DS
3
µPA1808
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
40
V GS = 10 V
FORWARD TRANSFER CHARACTERISTICS
10 0
4.5 V
4.0 V
V D S = 10 V
P u lse d
10
ID - Drain Current - A
ID - Drain Current - A
30
20
10
1
T A = 125°C
75°C
25°C
− 25°C
0.1
0.01
0.001
Pulsed
0
0.000 1
0
0.4
0.8
1.2
1.6
2
1
VDS - Drain to Source Voltage - V
3
3.5
4
100
2.2
| yfs | - Forward Transfer Admittance - S
V DS = 10 V
ID = 1.0 mA
2.0
1.8
1.6
1.4
1.2
-50
0
50
100
150
V DS = 10 V
Pulsed
10
T A = −25°C
25°C
75°C
125°C
1
0.1
0.01
0.1
Tch - Channel Temperature - °C
ID = 5.0 A
Pulsed
V GS = 4.0 V
4.5 V
20
10 V
10
0
-50
0
50
100
10
100
150
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - mΩ
40
30
1
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
RDS(on) - Drain to Source On-state Resistance - mΩ
2.5
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
2.4
40
I D = 5 .0 A
P u ls e d
30
20
10
Tch - Channel Temperature - °C
4
2
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
VGS(off) - Gate Cut-off Voltage - V
1.5
0
0
2
4
6
8
VGS - Gate to Source Voltage - V
Data Sheet G16250EJ1V0DS
10
µPA1808
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
1000
40
P u ls e d
30
C is s
Ciss, Coss, Crss - Capacitance - pF
RDS(on) - Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
V G S = 4 .0 V
4 .5 V
10 V
20
10
C oss
100
C rs s
VGS = 0 V
f = 1 .0 M H z
10
0
0 .0 1
0 .1
1
10
0 .1
100
ID - Drain Current - A
10
100
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
10000
100
V D D = 15 V
V G S = 10 V
R G = 10 Ω
1000
IF - Diode Forward Current - A
td(on), tr, td(off), tf - Switching Time - ns
1
tf
100
t d(off)
t d(on)
10
tr
1
0.01
V GS = 0 V
Pulsed
10
1
0.1
0.01
0.1
1
10
100
ID - Drain Current - A
0.4
0.6
0.8
1
1.2
VF(S-D) - Source to Drain Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
10
VGS - Gate to Source Voltage - V
ID = 9.5 A
8
VDD = 24 V
15 V
6.0 V
6
4
2
0
0
5
10
15
QG - Gate Charge - nC
Data Sheet G16250EJ1V0DS
5
µPA1808
• The information in this document is current as of August, 2002. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
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M8E 00. 4