DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1871 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit: mm) The µPA1871 is a switching device which can be driven directly by a 2.5-V power source. The µPA1871 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 8 5 1 2, 3 4 5 6, 7 8 :Drain1 :Source1 :Gate1 :Gate2 :Source2 :Drain2 1.2 MAX. 1.0±0.05 0.25 FEATURES 3° +5° –3° • Can be driven by a 2.5-V power source • Low on-state resistance RDS(on)1 = 26.0 mΩ MAX. (VGS = 4.5 V, I D = 3.0 A) RDS(on)2 = 27.0 mΩ MAX. (VGS = 4.0 V, I D = 3.0 A) RDS(on)3 = 38.0 mΩ MAX. (VGS = 2.5 V, I D = 3.0 A) • Built-in G-S protection diode against ESD 1 6.4 ±0.2 3.15 ±0.15 3.0 ±0.1 µ PA1871GR-9JG Power TSSOP8 0.65 0.27 VDSS 30 V Gate to Source Voltage VGSS ±12 V Drain Current (DC) ID(DC) ±6.0 A ID(pulse) ±80 A PT 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Total Power Dissipation Note2 0.1 0.10 M EQUIVALENT CIRCUIT Drain to Source Voltage Drain Current (pulse) 1.0 ±0.2 0.8 MAX. +0.03 –0.08 ABSOLUTE MAXIMUM RATINGS (T A = 25°C) Note1 4.4 ±0.1 0.145 ±0.055 PACKAGE 0.6 +0.15 –0.1 4 ORDERING INFORMATION PART NUMBER 0.5 0.1±0.05 Drain1 Gate1 Gate Protection Diode Source1 Drain2 Body Diode Body Diode Gate2 Gate Protection Diode Source2 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2 2. Mounted on ceramic substrate of 50 cm x 1.1 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G14887EJ2V0DS00 (2nd edition) Date Published April 2001 NS CP(K) Printed in Japan The mark ★ shows major revised points. © 2000 µPA1871 ELECTRICAL CHARACTERISTICS (T A = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±12 V, VDS = 0 V ±10 µA Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 0.5 1.5 V | yfs | VDS = 10 V, ID = 3.0 A 5 RDS(on)1 VGS = 4.5 V, ID = 3.0 A 15.0 20.5 26.0 mΩ RDS(on)2 VGS = 4.0 V, ID = 3.0 A 16.0 21.5 27.0 mΩ RDS(on)3 VGS = 2.5 V, ID = 3.0 A 21.0 27.8 38.0 mΩ Forward Transfer Admittance Drain to Source On-state Resistance 1.0 S Input Capacitance Ciss VDS = 10 V 930 pF Output Capacitance Coss VGS = 0 V 220 pF Reverse Transfer Capacitance Crss f = 1 MHz 105 pF Turn-on Delay Time td(on) VDD = 10 V, ID = 3.0 A 55 ns VGS(on) = 4.0 V 180 ns RG = 10 Ω 260 ns 230 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = 24 V 9 nC Gate to Source Charge QGS VGS = 4.0 V 2 nC Gate to Drain Charge QGD ID = 6.0 A 4 nC Body Diode Forward Voltage VF(S-D) IF = 6.0 A, VGS = 0 V 0.80 V Reverse Recovery Time trr IF = 6.0 A, VGS = 0 V 180 ns Reverse Recovery Charge Qrr di/dt = 50 A / µs 120 nC TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. RL RG PG. VGS VGS Wave Form 0 90% 90% ID VGS 0 VDS 0 10% 10% Wave Form τ τ = 1 µs Duty Cycle ≤ 1% D.U.T. 90% IG = 2 mA RL 50 Ω VDD VDD VDS 2 VGS(on) 10% tr td(off) td(on) ton tf toff Data Sheet G14887EJ2V0DS PG. µPA1871 TYPICAL CHARACTERISTICS (T A = 25°C) ★ DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA FORWARD BIAS SAFE OPERATING AREA 100 100 PW d ite V) Lim4.5 ID(pulse) = 1m s 80 ID - Drain Current - A dT - Derating Factor - % n) (o DS GS 60 40 10 R V (@ =1 0µ s 10 ms ID(DC) 10 0m s DC 1 0.1 20 Single Pulse PD (FET1) : PD (FET2) = 1 : 1 0 0 30 60 120 90 TA - Ambient Temperature - ˚C 0.01 0.1 150 10.0 1.0 100.0 VDS - Drain to Source Voltage - V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 100 25 ID - Drain Current - A ID - Drain Current - A VGS = 4.5 V 20 VDS = 10 V 10 15 VGS = 4.0 V 10 TA = 125˚C 1 0.1 25˚C 75˚C −25˚C 0.01 0.001 VGS = 2.5 V 5 0.0001 0 0 0.1 0.2 0.3 0.4 0.5 0.00001 0 0.5 VDS - Drain to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S VGS(off) - Gate Cut-off Voltage - V 100000 1 0 50 100 1.5 2 2.5 FORWARD TRANSFER ADMITTANCE Vs. DRAIN CURRENT 1.5 VDS = 10 V ID = 1mA 0.5 −50 1 VGS - Gate to Source Voltage - V 150 VDS = 10 V 10000 1000 TA = −25˚C 25˚C 75˚C 125˚C 0.100 0.010 0.01 0.1 1 10 100 ID - Drain Current - A Tch - Channel Temperature - ˚C Data Sheet G14887EJ2V0DS 3 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 50 VGS = 2.5 V TA = 125˚C 40 75˚C 30 25˚C −25˚C 20 0.01 0.1 1 10 100 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ µPA1871 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 40 VGS = 4.0 V TA = 125˚C 30 75˚C 25˚C 20 −25˚C 10 0.01 0.1 40 VGS = 4.5 V TA = 125˚C 75˚C 25˚C 20 −25˚C 10 0.01 0.1 1 10 100 RDS (on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 30 50 40 VGS = 2.5 V 30 4.0 V 10 −50 0 50 100 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 ID = 3.0 A 40 30 20 10 2 4 6 8 150 Tch - Channel Temperature - ˚C Ciss, Coss, Crss - Capacitance - pF RDS (on) - Drain to Source On-state Resistance - mΩ 4.5 V 20 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 50 100 ID = 3.0 A 10 12 f = 1 MHz 1000 Ciss Coss 100 Crss 10 0.1 1 10 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V 4 10 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE ID - Drain Current - A 0 0 1 ID - Drain Current - A ID - Drain Current - A Data Sheet G14887EJ2V0DS 100 µPA1871 SWITCHING CHARACTERISTICS SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 IF - Source to Drain Current - A td(on), tr, td(off), tf - Switching Time - ns 1000 tr tf td(off) 100 td(on) VDD = 10 V VGS(on) = 4 V RG = 10 Ω 10 0.1 1 ID - Drain Current - A 10 VGS = 0V 10 1 0.1 0.01 0.4 0.6 0.8 1 1.2 VF(S-D) - Body Diode Forward Voltage - V DYNAMIC INPUT CHARACTERISTICS ID = 6.0 A 5 VDD = 24 V 15 V 10 V 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 Qg - Gate Charge - nC ★ TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transient Thermal Resistance - ˚C/W VGS - Gate to Source Voltage - V 6 100 62.5 ˚C/W 10 1 Single Pulse Mounted on Ceramic Board of 50 cm 2 x 1.1 mm PD(FET1) : PD(FET2) = 1 : 1 0.1 1m 10 m 100 m 1 10 PW - Pulse Width - s Data Sheet G14887EJ2V0DS 100 1000 5 µPA1871 [MEMO] 6 Data Sheet G14887EJ2V0DS µPA1871 [MEMO] Data Sheet G14887EJ2V0DS 7 µPA1871 • The information in this document is current as of April, 2001. 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