NEC UPA1874

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1874
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
PACKAGE DRAWING (Unit: mm)
DESCRIPTION
The µPA1874 is a switching device which can be
driven directly by a 2.5-V power source.
This device features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
8
5
1
2, 3
4
5
6, 7
8
:Drain1
:Source1
:Gate1
:Gate2
:Source2
:Drain2
1.2 MAX.
1.0±0.05
0.25
FEATURES
3° +5°
–3°
• 2.5-V drive available
• Low on-state resistance
RDS(on)1 = 14.0 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A)
RDS(on)2 = 14.5 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A)
RDS(on)3 = 16.5 mΩ MAX. (VGS = 3.1 V, ID = 4.0 A)
RDS(on)4 = 19.5 mΩ MAX. (VGS = 2.5 V, ID = 4.0 A)
• Built-in G-S protection diode against ESD
1
PACKAGE
µ PA1874GR-9JG
Power TSSOP8
6.4 ±0.2
0.65
0.27
Drain to Source Voltage (VGS = 0 V)
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±12
V
Drain Current (DC) (TA = 25°C)
ID(DC)
±8.0
A
ID(pulse)
±80
A
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Total Power Dissipation (2 unit)
Note 2
1.0 ±0.2
0.1
0.8 MAX.
+0.03
–0.08
0.10 M
EQUIVALENT CIRCUIT
VDSS
Drain Current (pulse)
4.4 ±0.1
0.145 ±0.055
3.15 ±0.15
3.0 ±0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Note 1
0.6 +0.15
–0.1
4
ORDERING INFORMATION
PART NUMBER
0.5
0.1±0.05
Drain1
Gate1
Gate
Protection
Diode
Source1
Drain2
Body
Diode
Gate2
Body
Diode
Gate
Protection
Diode
Source2
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2
2. Mounted on ceramic substrate of 5000 mm x 1.1 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G15631EJ1V0DS00 (1st edition)
Date Published December 2001 NS CP(K)
Printed in Japan
©
2001
µPA1874
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
10
µA
Gate Leakage Current
IGSS
VGS = ±12 V, VDS = 0 V
±10
µA
VGS(off)
VDS = 10 V, ID = 1.0 mA
0.5
1.5
V
| yfs |
VDS = 10 V, ID = 4.0 A
5.0
RDS(on)1
VGS = 4.5 V, ID = 4.0 A
9.0
11.0
14.0
mΩ
RDS(on)2
VGS = 4.0 V, ID = 4.0 A
9.5
11.5
14.5
mΩ
RDS(on)3
VGS = 3.1 V, ID = 4.0 A
10.0
12.5
16.5
mΩ
RDS(on)4
VGS = 2.5 V, ID = 4.0 A
11.0
14.5
19.5
mΩ
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
1.0
S
Input Capacitance
Ciss
VDS = 10 V
1280
pF
Output Capacitance
Coss
VGS = 0 V
260
pF
Reverse Transfer Capacitance
Crss
f = 1.0 MHz
170
pF
Turn-on Delay Time
td(on)
VDD = 10 V, ID = 4.0 A
70
ns
tr
VGS = 4.0 V
310
ns
td(off)
RG = 10 Ω
440
ns
410
ns
Rise Time
Turn-off Delay Time
Fall Time
tf
Total Gate Charge
QG
VDD = 24 V
14
nC
Gate to Source Charge
QGS
VGS = 4.0 V
2.0
nC
Gate to Drain Charge
QGD
ID = 8.0 A
7.0
nC
Diode Forward Voltage
VF(S-D)
IF = 8.0 A, VGS = 0 V
0.81
V
Reverse Recovery Time
trr
IF = 8.0 A, VGS = 0 V
290
ns
Reverse Recovery Charge
Qrr
di/dt = 50 A/ µs
310
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
VGS
RL
VGS
RG
PG.
Wave Form
VDD
0
VGS
10%
PG.
90%
τ
τ = 1 µs
Duty Cycle ≤ 1%
2
90%
VDS
VDS
10%
0
10%
Wave Form
td(on)
tr
ton
RL
50 Ω
VDD
90%
VDS
VGS
0
IG = 2 mA
td(off)
tf
toff
Data Sheet G15631EJ1V0DS
µPA1874
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
FORWARD BIAS SAFE OPERATING AREA
1000
ID(pulse)
100
80
ID - Drain Current - A
dT - Derating Factor - %
100
60
40
20
d
ite )
Lim .5 V
4
=
ID(DC)
S
)
(on
DS
10
R
10
ms
10
0m
s
DC
G
(V
PW
=1
0µ
s
10
0µ
s
1m
s
1
0.1
Single Pulse
D (FET1) : PD (FET2) = 1 : 1
0
30
60
90
120
TA - Ambient Temperature - ˚C
0.01 P
0.01
150
0.1
1
10
100
VDS - Drain to Source Voltage - V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
35
FORWARD TRANSFER CHARACTERISTICS
100
Pulsed
10
ID - Drain Current - A
ID - Drain Current - A
30
25
20
VGS = 4.5 V
4.0 V
3.1 V
2.5 V
15
10
5
0
Pulsed
VDS = 10 V
1
TA = 125˚C
0.1
25˚C
75˚C
0.01
−25˚C
0.001
0.0001
0.1
0
0.2
0.3
0.4
0.00001
0
0.5
VDS - Drain to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| yfs | - Forward Transfer Admittance - S
VGS(off) - Gate to Source Cut-off Voltage - V
VDS = 10 V
ID = 1 mA
1.0
0.5
−50
0
50
100
2
1.5
VGS - Gate to Sorce Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
1.5
1
150
100 VDS = 10 V
Pulsed
10
25˚C
TA = −25˚C
75˚C
1
125˚C
0.1
0.01
0.01
Tch - Channel Temperature - ˚C
0.1
1
10
100
ID - Drain Current - A
Data Sheet G15631EJ1V0DS
3
VGS = 2.5 V
25
TA = 125˚C
20
75˚C
25˚C
15
−25˚C
10
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
5
0.01
0.1
1
10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
25
VGS = 4.0 V
20
TA = 125˚C
15
75˚C
25˚C
−25˚C
10
5
0.01
0.1
1
10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
25
ID = 4.0 A
VGS = 2.5 V
20
3.1 V
4.0 V
4.5 V
15
10
5
−50
0
50
100
150
RDS(on) - Drain to Source On-state Resistance - mΩ
30
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
RDS(on) - Drain to Source On-state Resistance - mΩ
µPA1874
Tch - Channel Temperature - ˚C
4
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
25
VGS = 3.1 V
20
TA = 125˚C
75˚C
15
25˚C
−25˚C
10
5
0.01
0.1
1
10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
20
VGS = 4.5 V
TA = 125˚C
15
75˚C
25˚C
−25˚C
10
5
0.01
0.1
1
10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
ID = 4.0 A
40
30
20
10
0
0
2
4
6
8
10
VGS - Gate to Source Voltage - V
Data Sheet G15631EJ1V0DS
12
µPA1874
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
1000
td(on), tr, td(off), tf - Switching Time - ns
f = 1 MHz
VGS = 0 V
Ciss
1000
Coss
Crss
100
10
0.1
1
10
td(off)
tf
tr
100
td(on)
VDD = 10 V
VGS = 4 V
RG = 10 Ω
10
0.1
100
1
5
VGS - Gate to Source Voltage - V
VGS = 0 V
10
1
0.1
0.01
0.4
0.6
0.8
100
DYNAMIC INPUT CHARACTERISTICS
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
10
ID - Drain Current - A
VDS - Drain to Source Voltage - V
ISD - Diode Forward Current - A
1.0
ID = 8.0 A
VDD = 24 V
15 V
6V
4
3
2
1
0
1.2
VSD - Source to Drain Voltage - V
0
5
10
15
QG - Gate Charge - nC
20
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(ch-A) - Transient Thermal Resistance - ˚C/W
Ciss, Coss, Crss - Capacitance - pF
10000
Single Pulse
PD (FET1) : PD (FET2) = 1:1
Mounted on FR-4 board of 25 cm2 x 1.6 mm
125˚C/W
100
Mounted on Ceramic board of 50 cm2 x 1.1 mm
62.5˚C/W
10
1
0.1
0.001
0.01
0.1
1
10
100
1000
PW - Pulse Width - s
Data Sheet G15631EJ1V0DS
5
µPA1874
[MEMO]
6
Data Sheet G15631EJ1V0DS
µPA1874
[MEMO]
Data Sheet G15631EJ1V0DS
7
µPA1874
• The information in this document is current as of December, 2001. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
• NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
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responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
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agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
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"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
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Customers must check the quality grade of each semiconductor product before using it in a particular
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systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
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"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
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(Note)
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(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
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M8E 00. 4