DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1874 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING (Unit: mm) DESCRIPTION The µPA1874 is a switching device which can be driven directly by a 2.5-V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 8 5 1 2, 3 4 5 6, 7 8 :Drain1 :Source1 :Gate1 :Gate2 :Source2 :Drain2 1.2 MAX. 1.0±0.05 0.25 FEATURES 3° +5° –3° • 2.5-V drive available • Low on-state resistance RDS(on)1 = 14.0 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A) RDS(on)2 = 14.5 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A) RDS(on)3 = 16.5 mΩ MAX. (VGS = 3.1 V, ID = 4.0 A) RDS(on)4 = 19.5 mΩ MAX. (VGS = 2.5 V, ID = 4.0 A) • Built-in G-S protection diode against ESD 1 PACKAGE µ PA1874GR-9JG Power TSSOP8 6.4 ±0.2 0.65 0.27 Drain to Source Voltage (VGS = 0 V) 30 V Gate to Source Voltage (VDS = 0 V) VGSS ±12 V Drain Current (DC) (TA = 25°C) ID(DC) ±8.0 A ID(pulse) ±80 A PT 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Total Power Dissipation (2 unit) Note 2 1.0 ±0.2 0.1 0.8 MAX. +0.03 –0.08 0.10 M EQUIVALENT CIRCUIT VDSS Drain Current (pulse) 4.4 ±0.1 0.145 ±0.055 3.15 ±0.15 3.0 ±0.1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Note 1 0.6 +0.15 –0.1 4 ORDERING INFORMATION PART NUMBER 0.5 0.1±0.05 Drain1 Gate1 Gate Protection Diode Source1 Drain2 Body Diode Gate2 Body Diode Gate Protection Diode Source2 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2 2. Mounted on ceramic substrate of 5000 mm x 1.1 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G15631EJ1V0DS00 (1st edition) Date Published December 2001 NS CP(K) Printed in Japan © 2001 µPA1874 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±12 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1.0 mA 0.5 1.5 V | yfs | VDS = 10 V, ID = 4.0 A 5.0 RDS(on)1 VGS = 4.5 V, ID = 4.0 A 9.0 11.0 14.0 mΩ RDS(on)2 VGS = 4.0 V, ID = 4.0 A 9.5 11.5 14.5 mΩ RDS(on)3 VGS = 3.1 V, ID = 4.0 A 10.0 12.5 16.5 mΩ RDS(on)4 VGS = 2.5 V, ID = 4.0 A 11.0 14.5 19.5 mΩ Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance 1.0 S Input Capacitance Ciss VDS = 10 V 1280 pF Output Capacitance Coss VGS = 0 V 260 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 170 pF Turn-on Delay Time td(on) VDD = 10 V, ID = 4.0 A 70 ns tr VGS = 4.0 V 310 ns td(off) RG = 10 Ω 440 ns 410 ns Rise Time Turn-off Delay Time Fall Time tf Total Gate Charge QG VDD = 24 V 14 nC Gate to Source Charge QGS VGS = 4.0 V 2.0 nC Gate to Drain Charge QGD ID = 8.0 A 7.0 nC Diode Forward Voltage VF(S-D) IF = 8.0 A, VGS = 0 V 0.81 V Reverse Recovery Time trr IF = 8.0 A, VGS = 0 V 290 ns Reverse Recovery Charge Qrr di/dt = 50 A/ µs 310 nC TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. VGS RL VGS RG PG. Wave Form VDD 0 VGS 10% PG. 90% τ τ = 1 µs Duty Cycle ≤ 1% 2 90% VDS VDS 10% 0 10% Wave Form td(on) tr ton RL 50 Ω VDD 90% VDS VGS 0 IG = 2 mA td(off) tf toff Data Sheet G15631EJ1V0DS µPA1874 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA FORWARD BIAS SAFE OPERATING AREA 1000 ID(pulse) 100 80 ID - Drain Current - A dT - Derating Factor - % 100 60 40 20 d ite ) Lim .5 V 4 = ID(DC) S ) (on DS 10 R 10 ms 10 0m s DC G (V PW =1 0µ s 10 0µ s 1m s 1 0.1 Single Pulse D (FET1) : PD (FET2) = 1 : 1 0 30 60 90 120 TA - Ambient Temperature - ˚C 0.01 P 0.01 150 0.1 1 10 100 VDS - Drain to Source Voltage - V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 35 FORWARD TRANSFER CHARACTERISTICS 100 Pulsed 10 ID - Drain Current - A ID - Drain Current - A 30 25 20 VGS = 4.5 V 4.0 V 3.1 V 2.5 V 15 10 5 0 Pulsed VDS = 10 V 1 TA = 125˚C 0.1 25˚C 75˚C 0.01 −25˚C 0.001 0.0001 0.1 0 0.2 0.3 0.4 0.00001 0 0.5 VDS - Drain to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S VGS(off) - Gate to Source Cut-off Voltage - V VDS = 10 V ID = 1 mA 1.0 0.5 −50 0 50 100 2 1.5 VGS - Gate to Sorce Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 1.5 1 150 100 VDS = 10 V Pulsed 10 25˚C TA = −25˚C 75˚C 1 125˚C 0.1 0.01 0.01 Tch - Channel Temperature - ˚C 0.1 1 10 100 ID - Drain Current - A Data Sheet G15631EJ1V0DS 3 VGS = 2.5 V 25 TA = 125˚C 20 75˚C 25˚C 15 −25˚C 10 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ 5 0.01 0.1 1 10 ID - Drain Current - A 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 25 VGS = 4.0 V 20 TA = 125˚C 15 75˚C 25˚C −25˚C 10 5 0.01 0.1 1 10 ID - Drain Current - A 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 25 ID = 4.0 A VGS = 2.5 V 20 3.1 V 4.0 V 4.5 V 15 10 5 −50 0 50 100 150 RDS(on) - Drain to Source On-state Resistance - mΩ 30 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ µPA1874 Tch - Channel Temperature - ˚C 4 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 25 VGS = 3.1 V 20 TA = 125˚C 75˚C 15 25˚C −25˚C 10 5 0.01 0.1 1 10 ID - Drain Current - A 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 20 VGS = 4.5 V TA = 125˚C 15 75˚C 25˚C −25˚C 10 5 0.01 0.1 1 10 ID - Drain Current - A 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 50 ID = 4.0 A 40 30 20 10 0 0 2 4 6 8 10 VGS - Gate to Source Voltage - V Data Sheet G15631EJ1V0DS 12 µPA1874 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS 1000 td(on), tr, td(off), tf - Switching Time - ns f = 1 MHz VGS = 0 V Ciss 1000 Coss Crss 100 10 0.1 1 10 td(off) tf tr 100 td(on) VDD = 10 V VGS = 4 V RG = 10 Ω 10 0.1 100 1 5 VGS - Gate to Source Voltage - V VGS = 0 V 10 1 0.1 0.01 0.4 0.6 0.8 100 DYNAMIC INPUT CHARACTERISTICS SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 10 ID - Drain Current - A VDS - Drain to Source Voltage - V ISD - Diode Forward Current - A 1.0 ID = 8.0 A VDD = 24 V 15 V 6V 4 3 2 1 0 1.2 VSD - Source to Drain Voltage - V 0 5 10 15 QG - Gate Charge - nC 20 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transient Thermal Resistance - ˚C/W Ciss, Coss, Crss - Capacitance - pF 10000 Single Pulse PD (FET1) : PD (FET2) = 1:1 Mounted on FR-4 board of 25 cm2 x 1.6 mm 125˚C/W 100 Mounted on Ceramic board of 50 cm2 x 1.1 mm 62.5˚C/W 10 1 0.1 0.001 0.01 0.1 1 10 100 1000 PW - Pulse Width - s Data Sheet G15631EJ1V0DS 5 µPA1874 [MEMO] 6 Data Sheet G15631EJ1V0DS µPA1874 [MEMO] Data Sheet G15631EJ1V0DS 7 µPA1874 • The information in this document is current as of December, 2001. 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